Ordering Information
Specify part number followed by
Option Number (if desired).
HCPL-181-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
00A = Rank Mark A
00B = Rank Mark B
00C = Rank Mark C
00D = Rank Mark D
Agilent HCPL-181
Phototransistor Optocoupler
SMD Mini-Flat Type
Data Sheet
Features
Current Transfer Ratio
(CTR: min. 50% at I
F
= 5 mA,
V
CE
= 5 V)
High input-output isolation voltage
(V
iso
= 3750 Vrms)
High collector-emitter voltage (V
CEO
= 80 V)
Response time (t
r
: typ., 4
s at
V
CE
= 2 V, I
C
= 2 mA, R
L
= 100
)
Mini-flat package (2.0 mm profile) in
tape and reel package
UL approved
CSA approved
IEC/EN/DIN EN 60747-5-2 approved
Options available:
IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
I/O interfaces for computers
System appliances, measuring in-
struments
Signal transmission between cir-
cuits of different potentials and
impedances
Feedback circuit in power supply
Description
The HCPL-181 contains a light
emitting diode optically coupled to
a phototransistor. It is packaged in
a 4-pin mini-flat SMD package with
a 2.0 mm profile. The small
dimension of this product allows
significant space saving. The
package volume is 30% smaller
than that of conventional DIP type.
Input-output isolation voltage is
3750 Vrms. Response time, t
r
, is
typically 4
s and minimum CTR is
50% at input current of 5 mA.
Functional Diagram
Schematic
4
3
1
2
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
1. ANODE
2. CATHODE
3. EMITTER
4. COLLECTOR
1
2
ANODE
CATHODE
VF
+
IF
4
3
COLLECTOR
EMITTER
IC
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
2
Package Outline Drawings
HCPL-181-000E
HCPL-181-060E
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
30 seconds
60 ~ 150 sec
90 sec
60 sec
60 sec
25
C
150
C
200
C
250
C
260
C (Peak Temperature)
217
C
Time (sec)
Tem
perature (
C)
DIMENSIONS IN MILLIMETERS.
4.40
0.2
3.60
0.3
2.00
0.2
5.30
0.3
0.2
0.05
7.00
0.40
0.1
0.10
0.1
181
Y W W
2.54
0.25
DATE CODE *1
RANK *2
LEAD
FREE
+ 0.2
0.7
DIMENSIONS IN MILLIMETERS.
4.40
0.2
3.60
0.3
2.00
0.2
5.30
0.3
0.2
0.05
7.00
0.40
0.1
0.10
0.1
181 V
Y W W
2.54
0.25
DATE CODE *1
RANK *2
LEAD
FREE
+ 0.2
0.7
3
Electrical Specifications (T
A
= 25C)
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Forward Voltage
V
F
1.2
1.4
V
I
F
= 20 mA
Reverse Current
I
R
10
A
V
R
= 4 V
Terminal Capacitance
C
t
30
250
pF
V = 0, f = 1 KHz
Collector Dark Current
I
CEO
100
nA
V
CE
= 20 V
Collector-Emitter Breakdown Voltage
BV
CEO
80
V
I
C
= 0.1 mA, I
F
= 0
Emitter-Collector Breakdown Voltage
BV
ECO
6
V
I
E
= 10
A, I
F
= 0
Collector Current
I
C
2.5
30
mA
I
F
= 5 mA, V
CE
= 5 V
*Current Transfer Ratio
CTR
50
600
%
Collector-Emitter Saturation Voltage
V
CE(sat)
0.2
V
I
F
= 20 mA, I
C
= 1 mA
Response Time (Rise)
t
r
4
18
s
V
CC
= 2 V, I
C
= 2 mA
Response Time (Fall)
t
f
3
18
s
R
L
= 100
Isolation Resistance
R
iso
5 x 10
10
1 x 10
11
DC 500 V
40 ~ 60% R.H.
Floating Capacitance
C
f
0.6
1.0
pF
V = 0, f = 1 MHz
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Collector-emitter saturation voltage
vs. forward current.
I F
FORWARD CURRENT
mA
0
TA AMBIENT TEMPERATURE C
75
125
50
25
10
40
0
50
100
-55
60
30
20
P
C
COLLECTOR POWER DISSIPATION
mW
0
TA AMBIENT TEMPERATURE C
100
50
200
150
75
125
25
0
50
100
-55
0
IF FORWARD CURRENT mA
10
15
2
5
0
1
3
4
5
6
V
CE(SAT.)
COLLECTOR-EMITTER
SATURATION VOLTAGE
V
TA = 25C
IC = 0.5 mA
IC = 1 mA
IC = 3 mA
IC = 5 mA
IC = 7 mA
Absolute Maximum Ratings (T
A
= 25C)
Storage Temperature, T
S
55C to +155C
Operating Temperature, T
A
55C to +100C
Lead Solder Temperature, max.
260C for 10 s
(1.6 mm below seating plane)
Average Forward Current, I
F
50 mA
Reverse Input Voltage, V
R
6 V
Input Power Dissipation, P
I
70 mW
Collector Current, I
C
50 mA
Collector-Emitter Voltage, V
CEO
80 V
Emitter-Collector Voltage, V
ECO
6 V
Collector Power Dissipation
150 mW
Total Power Dissipation
170 mW
Isolation Voltage, V
iso
3750 Vrms
(AC for 1 minute, R.H. = 40 ~ 60%)
* CTR = x 100%
I
C
I
F
Rank Mark
CTR (%)
Conditions
A
80 ~ 160
I
F
= 5 mA,
B
130 ~ 260
C
200 ~ 400
D
300 ~ 600
V
CE
= 5 V, T
A
= 25C
4
Figure 10. Response time vs. load resistance.
Figure 11. Frequency response.
VOLTAGE GAIN AV
dB
f FREQUENCY kHz
1
20
500
5
20
10
2
10
50
0.5
0
100 200
RL = 10 k
RL = 1 k
RL = 100
VCE = 2 V
IC = 2 mA
TA = 25C
RESPONSE TIME
s
0.1
RL LOAD RESISTANCE k
0.1
5
1
0.5
0.2
0.5
500
0.2
2
10
0.05
2
VCE = 2 V
IC = 2 mA
TA = 25C
tf
tr
1
5
10
20
50
100
200
ts
td
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
Figure 7. Relative current transfer ratio vs.
temperature.
Figure 8. Collector-emitter saturation
voltage vs. temperature.
Figure 9. Collector dark current vs.
temperature.
I F
FORWARD CURRENT
mA
1
VF FORWARD VOLTAGE V
2.0
3.0
10
5
500
1.0
0
TA = 75C
0.5
1.5
2.5
2
20
50
100
200
TA = 50C
TA = 25C
TA = 0C
TA = -25C
0
IF FORWARD CURRENT mA
10
50
40
200
2
0
20
60
120
140
160
CTR
CURRENT TRANSFER RATIO
%
VCE = 5 V
TA = 25C
80
100
180
5
20
I C
COLLECTOR CURRENT
mA
0
VCE COLLECTOR-EMITTER VOLTAGE V
6
9
40
20
50
3
0
PC (MAX.)
TA = 25C
I
F
= 30 mA
I
F
= 25 mA
I
F
= 10 mA
I
F
= 5 mA
30
10
I
F
= 20 mA
I
F
= 15 mA
1
2
4
5
7
8
V
CE(SAT.)
COLLECTOR-EMITTER
SATURATION VOLTAGE
V
0
0.06
0.02
0.10
IC = 1 mA
IF = 20 mA
TA AMBIENT TEMPERATURE C
60
40
80
100
20
0.04
0.08
I CEO
COLLECTOR DARK CURRENT
nA
TA AMBIENT TEMPERATURE C
1
10
100
1000
80
60
40
100
20
10000
VCE = 20 V
RELATIVE CURRENT TRANSFER RATIO
%
0
100
50
150
VCE = 2 V
IF = 5 mA
TA AMBIENT TEMPERATURE C
80
40
60
100
20
5
V
CC
R
D
INPUT
R
L
OUTPUT
INPUT
OUTPUT
10%
90%
t
t
t
t
d
r
s
f
Test Circuit for Response Time
Test Circuit for Frequency Response
VCC
RD
RL
OUTPUT
~
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
Japan: (+81 3) 3335-8152 (Domestic/Interna-
tional), or 0120-61-1280 (Domestic Only)
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Taiwan: (+65) 6755 1843
Data subject to change.
Copyright 2004 Agilent Technologies, Inc.
Obsoletes 5989-0306EN
October 27, 2004
5989-1738EN
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