2-47
Agilent HMMC-5200
DC-20 GHz HBT Series-Shunt
Amplifier
Data Sheet
Absolute Maximum Ratings
[1]
[1]
Operation in excess of any one of these ratings may result in permanent damage to this
device. For normal operation, all combined bias and thermal conditions should be
chosen such that the maximum Junction Temperature (T
J
) is not exceeded. TA=25
C
except for Top, Tst, and Tmax.
Symbol
Parameters/Conditions
Min.
Max.
Units
V
CC
VDC Pad Voltage
8.0
Volts
V
PAD
Output Pad Voltage
3.5
Volts
P
in
RF Input Power
13
dBm
TJ
Junction Temperature
+150
C
T
op
Operating Temperature
-55
+85
C
T
st
Storage Temperature
-65
+165
C
T
max
Max. Assembly Temperature
+300
C
Description
The HMMC-5200 is a DC to 20
GHz, 9.5 dB gain, feedback ampli-
fier designed to be used as a cas-
cadable gain block for a variety
of applications. The device con-
sists of a modified Darlington
feedback pair which reduces the
sensitivity to process variations
and provides 50 ohm input/out-
put port matches. Furthermore,
this amplifier is fabricated using
MWTC's Heterojunction Bipolar
Transistor (HBT) process which
provides excellent process uni-
formity, reliability and 1/f noise
performance. The device re-
quires a single positive supply
voltage and generally operates
Class-A for good distortion per-
formance.
Chip Size:
410
460
m
(16.1
18.1 mils)
Chip Size Tolerance:
10
m (
0.4 mils)
Chip Thickness:
127
15
m (5.0
0.6 mils)
Pad Dimensions:
70
70
m (2.8
2.8 mils), or larger
Features
High Bandwidth, F
-1dB
:
21 GHz Typical
Moderate Gain:
9.5 dB
1 dB @ 1.5 GHz
P
-1dB
@ 1.5 GHz:
12.5 dBm Typical
Low l/f Noise Corner:
<20 kHz Typical
Single Supply Operation
:
>4.75 volts @ 44 mA Typ.
Low Power Dissipation:
190 mW Typ. for chip
2-48
HMMC-5200/rev.3.4
DC Specifications/Physical Properties
[1]
(Typicals are for V
CC
= + 5V, R
out
= 64
)
[1]
Backside ambient operating temperature T
A
= T
op
= 25
C unless otherwise noted.
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
V
CC
Supply Voltage
4.75
6.0
Volts
I
1
Stage-One Supply Current
14.5
17
20
mA
I
2
Stage-Two Supply Current
26
29
32
mA
I
1
+I
2
Total Supply Current
46
mA
J-bs
Thermal Resistance[1]
(Junction-to-Backside at TJ = 150
C)
[2]
]
340
C/Watt
[2]
Thermal resistance (in
C/Watt) at a junction temperature T(
C) can be estimated using the equation:
(T)
(T
J
) [T(
C)+273] / [T
J
(
C)+273] where
(T
J
=150
C) =
J-bs
.
RF Specifications
(T
A
= 25
C, V
CC
= + 5V, R
out
= 64
,
50
system)
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
BW
Operating Bandwidth (f
-3db
)
20
GHz
BW
Operating Bandwidth (f
-1db
)
21
GHz
S
21
Small Signal Gain (@1.5 GHz)
8.5
9.7
10.5
dB
Gain
Small Signal Gain Flatness (DC - 5 GHz)
0.2
dB
Small Signal Gain Flatness (DC - 20 GHz)
1
dB
TC
Temperature Coefficient of Gain (DC-13 GHz)
0.004
dB/
C
Temperature Coefficient of Gain (13-20 GHz)
0.02
dB/
C
(RL
in
)
MIN
Minimum Input Return Loss (DC-15 GHz)
-15
dB
Minimum Input Return Loss (15-20 GHz)
-12
dB
(RL
out
)
MIN
Minimum Output Return Loss
-15
dB
Isolation
Reverse Isolation
-15
dB
P
-1dB
Output Power at 1dB Gain Compression:
dBm
(@ 1.5 GHz)
12.5
(@ 5 GHz)
12.5
(@ 10 GHz)
11.7
(@ 15 GHz)
10.6
(@ 20 GHz)
8.0
P
SAT
Saturated Output Power (@ 1.5 GHz)
13
dBm
NF
Noise Figure:
dB
(@ 1 GHz)
6.5
(@ 6 GHz)
6.8
(@ 10 GHz)
7
(@ 15 GHz)
7.5
(@ 16 GHz)
8
(@ 18 GHz)
8.5
HMMC-5200/rev.3.4
2-49
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
Applications
The HMMC-5200 can be used for
a variety of applications requiring
moderate amounts of gain and
low power dissipation in a 50
system.
Biasing and Operation
The HMMC-5200 can be operated
from a single positive supply.
This supply must be connected to
two points on the chip, namely
the V
cc
pad and the output pad.
The supply voltage may be direct-
ly connected to the V
cc
pad as
long as the voltage is between
+4.75 to +7 volts; however, if the
supply is higher than +7 volts, a
series resistor (R
cc
) should be
used to reduce the voltage to the
V
cc
pad. See the bonding diagram
for the equation used to select
R
cc
. In the case of the output pad,
the supply voltage must be con-
nected to the output transmission
line through a resistor and an in-
ductor. The required value of the
resistor is given by the equation:
R
out
= 35.7V
supply
-114.3
,
where V
supply
is in volts. If R
out
is
greater than 300
, the inductor
may be omitted, however, the am-
plifier's gain may be reduced by
~0.5 dB. Figure 4 shows a recom-
mended bonding strategy.
The chip contains a backside via
to provide a low inductance
ground path; therefore, the
ground pads on the IC should not
be bonded.
The voltage at the IN and OUT
pads of the IC will be approxi-
mately 3.2 Volts; therefore, DC
blocking caps should be used at
these ports.
Assembly Techniques
It is recommended that the RF in-
put and RF output connections
be made using 0.7 mil diameter
gold wire. The chip is designed to
operate with 0.1-0.3 nH of induc-
tance at the RF input and output.
This can be accomplished by us-
ing 10 mil bond wire lengths on
the RF input and output. The bias
supply wire can be a 0.7 mil diam-
eter gold wire attached to the V
CC
bonding pad.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical fac-
tors in successful GaAs MMIC
performance and reliability.
Figure 1.
Simplified Schematic Diagram
Out
In
Vcc
GND
GND
GND
GND
2-50
HMMC-5200/rev.3.4
Figure 2.
Typical S
21
and S
12
Response
Figure 3.
Typical S
11
and S
22
Response
S-Parameters
[1]
(T
A
= 25
C, V
CC
= + 6V
,
R
OUT
= 100
,
L
in/out
=0.17nH
)
Freq.
(GHz)
S
11
S
12
S
21
S
22
dB
mag
ang
dB
mag
ang
dB
mag
ang
dB
mag
ang
0.0
-30.4
0.030
28.9
-14.1
0.197
0.0
9.5
3.013
179.9
-28.4
0.038
-1.5
1.0
-29.5
0.033
24.9
-14.1
0.195
-2.0
9.5
2.999
171.5
-29.3
0.034
-7.049
2.0
-28.7
0.037
27.3
-14.2
0.194
-4.1
9.5
2.992
163.2
-30.8
0.029
-15.233
3.0
-27.2
0.043
33.5
-14.2
0.195
-6.2
9.5
3.009
155.0
-31.5
0.026
-23.9
4.0
-25.6
0.052
32.4
-14.1
0.195
-8.3
9.6
3.036
146.7
-33.6
0.022
-42.7
5.0
-24.8
0.058
33.3
-14.1
0.195
-10.4
9.7
3.062
138.2
-35.8
0.016
-72.8
6.0
-24.0
0.063
31.1
-14.1
0.196
-12.6
9.8
3.097
129.6
-36.6
0.015
-109.3
7.0
-23.1
0.070
27.1
-14.1
0.197
-14.7
9.9
3.135
120.9
-34.1
0.020
-143.3
8.0
-22.6
0.074
21.9
-14.0
0.197
-16.9
10.0
3.181
112.0
-30.1
0.031
-166.4
9.0
-22.5
0.074
15.7
-14.0
0.198
-19.1
10.1
3.225
102.9
-26.9
0.045
176.1
10.0
-22.3
0.076
8.55
-14.0
0.199
-21.4
10.2
3.266
93.5
-24.4
0.060
164.4
11.0
-22.4
0.076
-0.36
-13.9
0.200
-23.6
10.3
3.298
83.9
-22.5
0.075
154.2
12.0
-22.5
0.075
-13.5
-13.9
0.201
-25.8
10.4
3.322
74.2
-20.9
0.090
147.9
13.0
-22.8
0.072
-27.9
-13.8
0.203
-28.2
10.4
3.338
64.4
-19.5
0.105
141.1
14.0
-23.2
0.069
-47.1
-13.8
0.204
-30.6
10.4
3.332
54.2
-18.3
0.121
134.2
15.0
-22.9
0.071
-69.7
-13.7
0.205
-33.1
10.3
3.306
44.0
-17.5
0.133
128.4
16.0
-22.5
0.075
-93.4
-13.6
0.207
-35.7
10.2
3.253
33.7
-16.7
0.145
122.0
17.0
-20.8
0.091
-115.1
-13.6
0.208
-37.9
10.0
3.181
23.5
-16.0
0.158
118.6
18.0
-19.2
0.109
-134.4
-13.5
0.210
-40.8
9.7
3.085
13.4
-15.5
0.167
112.3
19.0
-17.4
0.134
-149.6
-13.4
0.212
-43.8
9.4
2.975
3.5
-15.3
0.172
109.7
20.0
-15.8
0.161
-161.7
-13.4
0.213
-46.8
9.0
2.844
-6.0
-15.2
0.172
106.0
21.0
-14.4
0.190
-172.3
-13.4
0.213
-49.8
8.6
2.706
-15.4
-14.9
0.179
105.1
22.0
-13.1
0.220
178.7
-13.4
0.213
-52.9
8.1
2.560
-24.4
-14.9
0.178
104.0
23.0
-12.0
0.250
170.7
-13.4
0.212
-55.6
7.6
2.416
-33.0
-14.7
0.183
103.0
24.0
-11.0
0.281
163.3
-13.4
0.212
-58.3
7.1
2.272
-41.3
-14.5
0.187
104.9
25.0
-10.1
0.313
157.0
-13.5
0.211
-61.2
6.5
2.134
-49.2
-14.2
0.193
105.7
26.0
-9.29
0.343
150.8
-13.4
0.212
-63.9
6.0
1.997
-56.9
-13.8
0.203
106.8
[1]
S-parameter data obtained from on-wafer device measurement plus simulation of input and output wire bond inductance.
S
1
1
,
(
d
B
)
S
2
2
,
(
d
B
)
-40
0
-10
-20
-30
-50
Frequency (GHz)
0.10
13
26
S
22
S
11
-40
0
-10
-20
-30
-50
S
2
1
,
(
d
B
)
S
1
2
,
(
d
B
)
4
12
10
8
6
2
Frequency (GHz)
0.10
13
26
S
12
S
21
T
A
=25
C,V
CC
=+6V,
-20
0
-5
-10
-15
-25
R
OUT
=100
,
L
in/out
=0.17nH
[1]
T
A
=25
C,V
CC
=+6V,
R
OUT
=100W
,
L
in/out
=0.17nH
[1]
HMMC-5200/rev.3.4
2-51
Figure 4.
Assembly Diagram
This data sheet contains a variety of typical performance data. The information supplied should not be interpreted as a complete list of circuit specifica-
tions. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent Technologies sales
representative.
Figure 5.
Bonding Pad Positions
Note: Blocking Cap required on
input and output.
0
70
340
460
90
240
390
0
410
Note:
All Dimensions in microns.
175
RF OUTPUT
RF INPUT
If 4.75V
V
supply
7V
R
CC
= 0
5V V
supply
R
out
=
R
cc
*
*
[(V
supply
-3.2)*(1/0.028)]
R
CC
= [(V
supply
-6.5)*(1/0.01725)]
If V
supply
> 7V
R
out
L
choke
C
block
C
block
Note: For optimum performance,
the input and output bond wire
inductances should each be 0.1-0.3 nH.
(bond wire has about 20 pH/mil
of inductance).
L
choke
is optional if R
out
is greater
than 300
, however, gain will be
reduced by about 0.5 dB.
*
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