Agilent IAM-92516 High
Linearity GaAs FET Mixer
Data Sheet
Description
Agilent Technologies's IAM-92516
is a high linearity GaAs FET Mixer
using 0.5
m enhancement mode
pHEMT technology. This device
houses in Pb-free and Halogen free
16 pins LPCC 3x3
[2]
plastic
package. The IAM-92516 has built-
in LO buffer amplifier which
requires -3 dBm LO power to
deliver an input third order
intercept point of 27 dBm. LO port
is 50 ohm matched and can be
driven differential or single ended
while IF port is 200 ohm matched
and fully differential. RF port
requires external matching
network for optimum input return
loss and IIP3 performance.
RF and LO frequency range
coverage from 400 to 3500 MHz
and IF coverage is from DC to 300
MHz. This mixer consumes 26 mA
of current from a single 5V supply.
Conversion loss is typically 6 dB
and noise figure is typically 12.5
dB. Excellent output power at 1 dB
compression of 9 dBm. LO to IF,
LO to RF and RF to IF isolation are
greater than 30 dB.
The IAM-92516 is ideally suited for
frequency up/down conversion for
base station radio card receiver
and transmitter, microwave link
transceiver, MMDS, modulation
and demodulation for receiver and
transmitter and general purpose
resistive FET mixer, which require
high linearity. All devices are 100%
RF and DC tested.
Features
DC = 5V @ 26 mA (Typ.)
RF = 1.91 GHz, Pin
RF
= -10 dBm;
LO = 1.7 GHz, Pin
LO
= -3 dBm;
IF = 210 MHz unlesss otherwise
specified
Lead-free Option Available
High Linearity: 27 dBm IIP3
Conversion Loss: 6 dB typical
Wide band operation: 400-3500
MHz RF & LO input DC 300 MHz
IF output
Fully differential or single ended
operation
High P1dB: 9 dBm typical
Low current consumption: 5V@
26 mA typical
Excellent uniformity in product
specifications
Small LPCC 3.0 x 3.0 x 0.75 mm
package
MTTF > 300 years
[1]
MSL-1 and lead-free
Tape-and-Reel packaging option
available
Applications
Frequency up/down converter for
base station radio card, microwave
link transceiver, and MMDS
Modulation and demodulation for
receiver and transmitter
General purpose resistive FET
mixer for other high linearity
applications
Pin Connections and
Package Marking
Notes:
Package marking provides orientation and
identification
"M3" = Device Code
"X" = Month code indicates the month of
manufacture
Notes:
1. Refer to reliability datasheet for detailed
MTTF data.
2. Conform to JEDEC reference outline
MO229 for DRP-N
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
2
IAM-92516 Absolute Maximum Ratings
[1]
Parameter
Units
Absolute Max.
Device Voltage
V
10
CW RF Input Power
[2]
dBm
+30
CW LO Input Power
[2]
dBm
20
Channel Temperature
C
150
Storage Temperature
C
-65 to 150
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions and
T
A
= 25
C.
3. Board (package belly) temperature T
B
is
25
C. Derate 21 mW/C for T
B
> 85
C.
4. Channel-to-board thermal resistance
measured using 150
C Liquid Crystal
Measurement method.
Electrical Specifications
T
A
= 25
C, DC =5V @ 26 mA, RF =1.91 GHz, Pin
RF
= -10 dBm; LO =1.7 GHz, Pin
LO
= -3 dBm, IF = 210 MHz unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
[1]
F
RF
Frequency Range, RF
MHz
400
3500
F
LO
Frequency Range, LO
MHz
400
3500
F
IF
Frequency Range, IF
MHz
DC
300
Id
Device Current
mA
22
26
30
0.89
G
c
[3]
Conversion Loss
dB
6
6.9
0.08
IIP3
[2]
Input Third Order Intercept Point
dBm
22
27
0.43
NF
[3]
SSB Noise Figure
dB
12.5
P1dB
[3]
Output Power at 1 dB Compression
dBm
9
RL
RF
RF Port Return Loss
dB
19
RL
LO
LO Port Return Loss
dB
24
RL
IF
IF Port Return Loss
dB
21
ISOL
L-R
LO-RF Isolation
dB
34
ISOL
L-I
LO-IF Isolation
dB
56
ISOL
R-L
RF-IF Isolation
dB
33
Notes:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of
this product and is intended to be used as an estimate for distribution of the typical specification.
2. IIP3 test condition: F
RF1
= 1.91 GHz, F
RF2
= 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency F
LO
= 1.7 GHz.
3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Figure 1. IAM-92516 Test Board.
Thermal Resistance
[2,4]
ch-c
= 47.6
C/W
Simplified Schematic
3
IIP3
25
29
26
27
28
240
200
160
120
80
40
0
Cpk=3.7
Stdev=0.43
+3 Std
3 Std
FREQUENCY
LSL=22.0, Nominal=26.8
ID
22
30
24
26
28
200
160
120
80
60
40
0
Cpk=1.5
Stdev=0.89
+3 Std
3 Std
FREQUENCY
LSL=22.0, Nominal=26.0, USL=30.0
CONVERSION LOSS
-6.4
-5.4
-6.2
-6
-5.8
-5.6
150
120
90
60
30
0
Cpk=3.67
Stdev=0.079
+3 Std
3 Std
FREQUENCY
LSL=-6.9, Nominal=-6.0
Figure 3. Normal Distribution of IIP3, ID, and Conversion Loss.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
6. Conversion Loss data has de-embed balun loss 0.8 dB @ 210 MHz.
Figure 2. Schematic Diagram of IAM-92516 Test Circuit.
4
IAM-92516 Typical Performance
DC =5V @ 26 mA, RF =1.91 GHz, Pin
RF
= -10 dBm; LO = 1.7 GHz, Pin
LO
= -3 dBm, IF = 210 MHz unless otherwise specified
Figure 4. Conversion Loss vs LO Power
Over Temperature.
CONVERSION LOSS (dB)
-5
-5.2
-5.4
-5.6
-5.8
-6
-6.2
-6.4
-6.6
-6.8
-7
-7.2
-7.4
-7.6
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
Figure 5. IIP3 vs LO Power Over Temperature.
IIP3 (dBm)
33
31
29
27
25
23
21
19
17
15
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
Figure 6. Ids vs LO Power Over Temperature.
Ids (mA)
30
29
28
27
26
25
24
23
22
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
Figure 7. P1dB vs LO Power Over Temperature.
P1dB (dBm)
11
10
9
8
7
6
5
4
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
Figure 9. LO-IF Isolation vs LO Power Over
Temperature.
ISOLATION LO-IF (dB)
-52
-54
-56
-58
-60
-62
-64
-66
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
Figure 8. SSB NF vs LO Power Over
Temperature.
SSB NOISE FIGURE (dB)
31
29
27
25
23
21
19
17
15
13
11
9
7
5
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
Notes:
7. Typical performance plots are based on test
board shown at Figure 1 with matching circuit
stated at Figure 2.
8. Operating temperature range of Mini-circuit
RF transformer (model: TCM4-6T) is - 20
0
C to
85
0
C.
9. Conversion loss, P1dB and NF plots have de-
embedded balun loss 0.8 dB @ 210 MHz.
5
IAM-92516 Typical Performance, continued
DC = 5V @ 26 mA, RF =1.91 GHz, Pin
RF
= -10 dBm; LO = 1.7 GHz, Pin
LO
= -3 dBm, IF = 210 MHz unless otherwise specified
Figure 11. RF-IF Isolation vs LO Power Over
Temperature.
ISOLATION RF-IF (dB)
-30
-31
-32
-33
-34
-35
-36
-37
-38
-39
-40
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
Figure 12. RF Return Loss vs Frequency.
RF RETURN LOSS (dB)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
FREQUENCY (GHz)
0
1.5
0.5
1
2.5 3 3.5
4
4.5 5
5.5
2
6
Figure 13. LO Return Loss vs Frequency.
LO RETURN LOSS (dB)
0
-5
-10
-15
-20
-25
-30
FREQUENCY (GHz)
0
1.5
0.5
1
2.5 3 3.5
4
4.5 5
5.5
2
6
Figure 14. IF Return Loss vs Frequency.
IF RETURN LOSS (dB)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
FREQUENCY (MHz)
50
150
100
250
300 350
400
450
200
500
Figure 10. LO-RF Isolation vs LO Power Over
Temperature.
ISOLATION LO-RF (dB)
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
LO POWER (dBm)
-10
-6 -5
-9 -8 -7
-3 -2 -1 0 1 2
3 4
-4
5
-20
C
-40
C
+25
C
+85
C
LO Harmonics (nLO)
0
1
2
3
4
5
0
--
0
18.5
12.9
11.6
5.8
1
19.5
0
51.3
60.6
42.8
55.2
2
39.9
67.3
56.6
78.3
64.7
87.2
3
51.2
>90
>90
>90
>90
>90
4
68.9
>90
>90
>90
>90
>90
5
>90
>90
>90
>90
>90
>90
Harmonic Intermodulation Suppression
[10 ]
Note:
10. Test Conditions of Harmonic Intermodulation Suppression:
a) RF =1.91 GHz @-10 dBm and LO =1.7 GHz @-3 dBm.
b) RF harmonics and intermodulation products are referenced to a desired signal produced by
frequency IF = 210 MHz.
c) LO Harmonics are referenced to the -3 dBm LO drive signal.
RF Harmonics (mRF)
PDF 
ZIP