GENERAL DESCRIPTION
The ALD1101 is
a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-
mode transistors are manufactured with Advanced Linear Devices' en-
hanced ACMOS silicon gate CMOS process.
The ALD1101 offers high input impedance and negative current tempera-
ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25
C is = 5mA/50pA = 100,000,000.
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101A/ALD1101B
ALD1101
APPLICATIONS
Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier
input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
FEATURES
Low threshold voltage of 0.7V
Low input capacitance
Low Vos grades -- 2mV, 5mV, 10mV
High input impedance -- 10
12
typical
Negative current (I
DS
) temperature
coefficient
Enhancement-mode (normally off)
DC current gain 10
9
Operating Temperature Range*
-55
C to +125
C
0
C to +70
C
0
C to +70
C
8-Pin
8-Pin
8-Pin
CERDIP
Plastic Dip
SOIC
Package
Package
Package
ALD1101A PA
ALD1101B PA
ALD1101 DA
ALD1101 PA
ALD1101 SA
* Contact factory for industrial temperature range.
ORDERING INFORMATION
BLOCK DIAGRAM
SOURCE 1 (1)
SUBSTRATE (8)
SOURCE 2 (7)
GATE 2 (6)
DRAIN 1 (3)
GATE 1 (2)
DRAIN 2 (5)
PIN CONFIGURATION
1
2
3
4
8
7
6
5
SOURCE
1
GATE
1
DRAIN
1
NC
SUBSTRATE
SOURCE
2
GATE
2
DRAIN
2
TOP VIEW
DA, PA, SA PACKAGE
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ALD1101A/ALD1101B
Advanced Linear Devices
2
ALD1101
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
13.2V
Gate-source voltage, V
GS
13.2V
Power dissipation
500 mW
Operating temperature range
PA, SA package
0
C to +70
C
DA package
-55
C to +125
C
Storage temperature range
-65
C to +150
C
Lead temperature, 10 seconds
+260
C
Gate Threshold
Voltage
V
T
0.4
0.7
1.0
0.4
0.7
1.0
0.4
0.7
1.0
V
I
DS
= 10
A V
GS
= V
DS
Offset Voltage
V
OS
2
5
10
mV
I
DS
= 100
A V
GS
= V
DS
V
GS1
- V
GS2
Gate Threshold
TC
VT
-1.2
-1.2
-1.2
mV/
C
Temperature Drift
On Drain Current
I
DS (ON)
25
40
25
40
25
40
mA
V
GS
= V
DS
= 5V
Transconductance G
fs
5
10
5
10
5
10
mmho
V
DS
= 5V I
DS
= 10mA
Mismatch
G
fs
0.5
0.5
0.5
%
Output
G
OS
200
200
200
mho
V
DS
= 5V I
DS
= 10mA
Conductance
Drain Source
R
DS(ON)
50
75
50
75
50
75
V
DS
= 0.1V V
GS
= 5V
ON Resistance
Drain Source
ON Resistance
R
DS(ON)
0.5
0.5
0.5
%
V
DS
= 0.1V V
GS
= 5V
Mismatch
Drain Source
Breakdown
BV
DSS
12
12
12
V
I
DS
= 10
A V
GS
=0V
Voltage
Off Drain Current
I
DS(OFF)
0.1
4
0.1
4
0.1
4
nA
V
DS
=12V V
GS
= 0V
4
4
4
A
T
A
= 125
C
Gate Leakage
I
GSS
1
50
1
50
1
50
pA
V
DS
=0V V
GS
=12V
Current
10
10
10
nA
T
A
= 125
C
Input
C
ISS
6
10
6
10
6
10
pF
Capacitance
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified
ALD 1101A
ALD1101B
ALD1101
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
ALD1101A/ALD1101B
Advanced Linear Devices
3
ALD1101
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN -SOURCE CURRENT
(mA)
160
120
80
0
40
V
BS
= 0V
T
A
= 25
C
V
GS
= 12V
10V
8V
6V
4V
2V
DRAIN-SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN -SOURCE VOLTAGE (mV)
DRAIN-SOURCE CURRENT
(mA)
-160
-80
0
80
160
-8
8
4
0
-4
4V
V
GS
= 12V
6V
V
BS
= 0V
T
A
= 25
C
2V
FORWARD TRANSCONDUCTANCE
(
mho)
FORWARD TRANSCONDUCTANCE
vs. DRAIN-SOURCE VOLTAGE
DRAIN -SOURCE VOLTAGE (V)
1 x10
5
5 x10
4
1 x10
4
5 x10
3
2 x10
3
2 x10
4
1 x10
3
T
A
= +125
C
T
A
= +25
C
I
DS
= 10mA
I
DS
= 1mA
0
2
4
6
8
10
12
V
BS
= 0V
f = 1KHz
GATE - SOURCE VOLTAGE (V)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
DRAIN-SOURCE CURRENT
(
A)
20
15
10
5
0
0
0.8
1.6
2.4
3.2
4.0
V
BS
= 0V
-2V
-4V
-6V
-8V
-10V
-12V
V
GS
= V
DS
T
A
= 25
C
GATE SOURCE VOLTAGE (V)
R
DS (ON)
vs. GATE - SOURCE VOLTAGE
DRAIN - SOURCE ON RESISTANCE
(
)
10000
1000
100
10
2
0
4
6
8
10
12
V
DS
= 0.2V
V
BS
= 0V
T
A
= +25
C
T
A
= +125
C
OFF DRAIN - CURRENT vs.
TEMPERATURE
TEMPERATURE (
C)
OFF - DRAIN SOURCE CURRENT
(A)
-50
-25
+25
+50
+75
+125
+100
0
10
X
10
-6
V
DS
= +12V
V
GS
= V
BS
= 0V
10
X
10
-12
10
X
10
-9
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