D
P1
(1)
D
P2
(14)
G
P1
(2)
S
P1
(3)
S
P2
(12)
V+ (11)
G
P2
(13)
D
P3
(10)
D
P4
(5)
G
P3
(9)
S
P3
(8)
S
P4
(7)
~
V- (4)
V+ (11)
G
P4
(6)
ALD1107
BLOCK DIAGRAM
GENERAL DESCRIPTION
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC operating environment. The ALD1107/ALD1117 are
builiding blocks for differential amplifier input stages, transmission gates,
multiplexer applications, current sources, current mirrors and other preci-
sion analog circuits.
APPLICATIONS
Precision current sources
Precision current mirrors
Voltage Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Precision analog signal processing
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
ALD1107/ALD1117
FEATURES
Low threshold voltage of -0.7
Low input capacitance
Low V
OS
2mV typical
High input impedance -- 10
14
typical
Low input and output leakage currents
Negative current (I
DS
) temperature coefficient
Enhancement-mode (normally off)
DC current gain 10
9
Low input and output leakage currents
Operating Temperature Range*
-55
C to +125
C
0
C to +70
C
0
C to +70
C
8-Pin CERDIP
8-Pin Plastic Dip
8-Pin SOIC
Package
Package
Package
ALD1117 DA
ALD1117PA
ALD1117 SA
14-Pin CERDIP
14-Pin Plastic Dip
14-Pin SOIC
Package
Package
Package
ALD1107 DB
ALD1107 PB
ALD1107 SB
ORDERING INFORMATION
* Contact factory for industrial temperature range.
PIN CONFIGURATION
BLOCK DIAGRAM
DP2
GP2
SP2
GP3
SP3
GP1
SP1
DP4
GP4
1
2
3
4
DB, PB, SB PACKAGE
5
6
7
8
9
10
11
12
13
14
DP1
V
+
V
-
DP3
SP4
1
ALD1107
D
P1
(1)
D
P2
(8)
~
G
P1
(2)
S
P1
(3)
S
P2
(6)
V - (4)
V+ (5)
G
P2
(7)
ALD1117
DP2
GP2
SP2
GP1
SP1
1
2
3
4
DA, PA, SA PACKAGE
5
6
7
8
DP1
V
+
V
-
1
ALD1117
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ALD1107/ALD1117
Advanced Linear Devices
2
Gate Threshold
V
T
-0.4
-0.7
-1.0
-0.4
-0.7
-1.0
V
I
DS
= -1.0
A V
GS
= V
DS
Voltage
Offset Voltage
V
OS
2
10
2
10
mV
I
DS
= -10
A V
GS
= V
DS
V
GS1
-V
GS2
Gate Threshold
Temperature
TC
VT
-1.3
-1.3
mV/
C
Drift
2
On Drain
I
DS (ON)
-1.3
-2
-1.3
-2
mA
V
GS
= V
DS
= -5V
Current
Transconductance
G
IS
0.25
0.67
0.25
0.67
mmho V
DS
= -5V I
DS
= -10mA
Mismatch
G
fs
0.5
0.5
%
Output
G
OS
40
40
mho
V
DS
= -5V I
DS
= -10mA
Conductance
Drain Source R
DS (ON)
1200
1800
1200
1800
V
DS
= -0.1V V
GS
= -5V
On Resistance
Drain Source
On Resistance
R
DS (ON)
0.5
0.5
%
V
DS
= -0.1V V
GS
= -5V
Mismatch
Drain Source
Breakdown
BV
DSS
-12
-12
V
I
DS
= -1.0
A V
GS
= 0V
Voltage
Off Drain
I
DS (OFF)
10
400
10
400
pA
V
DS
= -12V V
GS
= 0V
Current
1
4
4
nA
T
A
= 125
C
Gate Leakage
I
GSS
0.1
10
0.1
10
pA
V
DS
= 0V V
GS
= -12V
Current
1
1
nA
T
A
= 125
C
Input
C
ISS
1
3
1
3
pF
Capacitance
2
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified
ALD1107
ALD1117
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
Notes:
1
Consists of junction leakage currents
2
Sample tested parameters
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
-13.2V
Gate-source voltage, V
GS
-13.2V
Power dissipation
500 mW
Operating temperature range
PA, SA, PB, SB package
0
C to +70
C
DA, DB package
-55
C to +125
C
Storage temperature range
-65
C to +150
C
Lead temperature, 10 seconds
+260
C
ALD1107/ALD1117
Advanced Linear Devices
3
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE CURRENT
(mA)
-10
-7.5
-5.0
-2.5
0
V
BS
= 0V
T
A
= 25
C
-10V
-8V
-6V
-4V
-2V
0
-8
-2
-6
-4
-10
-12
V
GS
= -12V
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE CURRENT
(
A)
-320
-160
0
160
320
-500
500
250
0
-250
-4V
V
GS
= -12V
-6V
V
BS
= 0V
T
A
= 25
C
-2V
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
GATE SOURCE VOLTAGE (V)
0
-0.8
-1.6
-2.4
-3.2
-4.0
-20
-15
-10
-5
0
DRAIN SOURCE CURRENT
(
A)
V
BS
= 0V
4V
6V
8V
10V
12V
V
GS
= V
DS
T
A
= 25
C
2V
-12
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (V)
0
-8
-2
-6
-4
-10
FORWARD TRANSCONDUCTANCE
(mmho)
1.0
0.5
0.2
0.1
0.05
0.02
0.01
V
BS
= 0V
f = 1KHz
I
DS
= -5mA
T
A
= +125
C
T
A
= +25
C
I
DS
= -1mA
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE
(K
)
100
10
1
0.1
-2
0
-4
-6
-8
-10
-12
V
DS
= 0.4V
V
BS
= 0V
T
A
= +125
C
T
A
= +25
C
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (
C)
OFF DRAIN SOURCE CURRENT
(pA)
-50
-25
+25
+50
+75
+125
+100
0
V
DS
= -12V
V
GS
= V
BS
= 0V
1
10
100
1000
ALD1107/ALD1117
Advanced Linear Devices
4
DIFFERENTIAL AMPLIFIER
CURRENT SOURCE MULTIPLICATION
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
TYPICAL APPLICATIONS
ISET
RSET
Q3
V+ = +5V
I SOURCE
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
I SOURCE = ISET
= V+ -Vt
RSET
= 4
RSET
~
Q1
Q2
V+ = +5V
Q4
1/2 ALD1106
or ALD1116
1/2 ALD1107
or ALD1117
V+
PMOS PAIR
Q
4
V
IN
-
NMOS PAIR
Q
2
Q
1
V
IN
+
Current
Source
Q
3
Q
1
, Q
2
: N - Channel MOSFET
Q
3
, Q
4
: P - Channel MOSFET
V
OUT
1/2 ALD1106
or ALD1116
1/2 ALD1107
or ALD1117
Q
SET,
Q
1
..Q
N
: ALD1106 or ALD1116
N - Channel MOSFET
I
SET
V+ = +5V
I
SOURCE
= I
SET
x N
R
SET
Q
2
Q
3
Q
SET
Q
1
Q
N
V+ = +5V
Q4
ISOURCE
RSET
Q1
Q3
ISET
ON
OFF
Digital Logic Control
of Current Source
Q1
: N - Channel MOSFET
Q3,Q4 : P - Channel MOSFET
1/2 ALD1107
or ALD1117
1/4 ALD1106
or 1/2 ALD1116
ALD1107/ALD1117
Advanced Linear Devices
5
CASCODE CURRENT SOURCES
BASIC CURRENT SOURCES
P- CHANNEL CURRENT SOURCE
N- CHANNEL CURRENT SOURCE
TYPICAL APPLICATIONS
I
SOURCE
V+ = +5V
R
SET
I
SET
1
2
3
Q
1
5
6
8
Q
2
7
I
SOURCE
= I
SET
=
V+ - Vt
R
SET
=
V+ - 1.0
R
SET
Q
1,
Q
2
: N - Channel MOSFET
~
=
4
R
SET
~
1/2 ALD1106
or ALD1116
V+ = +5V
2
3
5
6
7
8
Q
4
I
SOURCE
Q
3
R
SET
I
SET
Q
3
, Q
4
: P - Channel MOSFET
1/2 ALD1107
or ALD1117
I
SET
V+ = +5V
Q
2
I
SOURCE
R
SET
Q
3
Q
1
Q
1
, Q
2
, Q
3
, Q
4
: N - Channel MOSFET
(ALD1101 or ALD1103)
Q
4
ALD1106
I
SET
V+ = +5V
Q
1
Q
3
Q
2
Q
4
I
SOURCE
Q1, Q2, Q3, Q4: P - Channel MOSFET
(ALD1102 or ALD1103)
I
SOURCE
= I
SET
=
V+ - 2Vt
R
SET
=
3
R
SET
~
R
SET
ALD1107
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