e
EPAD
TM
N A
B L
E D
E
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
*N/C pins are internally connected.
Connect to V- to reduce noise
PC, SC PACKAGES
PA, SA PACKAGES
PIN CONFIGURATION
V
GS(th)
= -3.5V
ALD114835/ALD114935
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD
MATCHED PAIR MOSFET ARRAYS
ORDERING INFORMATION
GENERAL DESCRIPTION
ALD114835/ALD114935 are monolithic quad/dual N-Channel MOSFETs
matched at the factory using ALD's proven EPAD CMOS technology. These
devices are intended for low voltage, small signal applications. They are excel-
lent functional replacements for normally-closed relay applications, as they are
normally on (conducting) without any power applied, but could be turned off or
modulated when system power supply is turned on. These MOSFETs have the
unique characteristics of, when the gate is grounded, operating in the resis-
tance mode for low drain voltage levels and in the current source mode for
higher voltage levels and providing a constant drain current.
ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-
trical characteristics matching. As these devices are on the same monolithic
chip, they also exhibit excellent temperature tracking characteristics. They are
versatile as design components for a broad range of analog applications such
as basic building blocks for current sources, differential amplifier input stages,
transmission gates, and multiplexer applications. Besides matched pair electri-
cal characteristics, each individual MOSFET also exhibits well controlled pa-
rameters, enabling the user to depend on tight design limits. Even units from
different batches and different date of manufacture have correspondingly well
matched characteristics.
These depletion mode devices are built for minimum offset voltage and differ-
ential thermal response, and they are designed for switching and amplifying
applications in single 5V to +/-5V systems where low input bias current, low
input capacitance and fast switching speed are desired. These devices exhibit
well controlled turn-off and sub-threshold charactersitics and therefore can be
used in designs that depend on sub-threshold characteristics.
The ALD114835/ALD114935 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user,
for most applications, connect V+ pin to the most positive voltage potential (or
left open unused) and V- and N/C pins to the most negative voltage potential
in the system. All other pins must have voltages within these voltage limits.
FEATURES
Depletion mode (normally ON)
Precision Gate Threshold Voltages: -3.50V +/- 0.05V
Nominal R
DS(ON)
@V
GS
=0.0V of 540
Matched MOSFET to MOSFET characteristics
Tight lot to lot parametric control
Low input capacitance
V
GS(th)
match (V
OS
) -- 20mV
High input impedance -- 10
12
typical
Positive, zero, and negative V
GS(th)
temperature coefficient
DC current gain >10
8
Low input and output leakage currents
APPLICATIONS
Functional replacement of Form B (NC) relay
Zero power fail safe circuits
Backup battery circuits
Power failure detector
Fail safe signal detector
Source followers and buffers
Precision current mirrors
Precision current sources
Capacitives probes
Sensor interfaces
Charge detectors
Charge integrators
Differential amplifier input stage
High side switches
Peak detectors
Sample and Hold
Alarm systems
Current multipliers
Analog switches
Analog multiplexers
Voltage comparators
Level shifters
N/C*
1
2
3
14
15
16
4
13
5
12
N/C*
6
7
8
10
11
G
N1
D
N1
N/C*
D
N4
N/C*
G
N4
9
G
N3
D
N3
D
N2
G
N2
V
+
S
34
S
12
V
-
V
+
V
-
ALD114835
M 4
M 3
M 1
M 2
V
-
V
-
V
-
V
-
V-
G
N1
D
N1
N/C*
S
12
D
N2
G
N2
ALD114935
1
2
3
6
7
8
4
5
M 1
M 2
V-
N/C*
V-
V-
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 1.0-0506 2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
Operating Temperature Range*
0
C to +70
C
0
C to +70
C
16-Pin
16-Pin 8-Pin 8-Pin
Plastic Dip
SOIC Plastic Dip
SOIC
Package
Package Package
Package
ALD114835PC
ALD114835SC
ALD114935PA
ALD114935SA
ALD114835/ALD114935
Advanced Linear Devices
2
Notes:
1
Consists of junction leakage currents
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
10.6V
Gate-Source voltage,
V
GS
10.6V
Power dissipation
500 mW
Operating temperature range PA, SA, PC, SC package
0
C to +70
C
Storage temperature range
-65
C to +150
C
Lead temperature, 10 seconds
+260
C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
VGS(th)
-3.55
-3.50
-3.45
V
IDS =1
A
VDS = 0.1V
Offset Voltage
VOS
7
20
mV
VGS(th)1 - VGS(th)2
Offset Voltage Tempco
TCVOS
5
V/
C
VDS1 = VDS2
GateThreshold Voltage Tempco
TCVGS(th)
-1.7
mV/
C
ID = 1
A, VDS = 0.1V
0.0
ID = 20
A, VDS = 0.1V
+1.6
ID = 40
A, VDS = 0.1V
On Drain Current
IDS (ON)
12.0
mA
VGS = +6.0V, VDS =+5V
3.0
VGS = +0.5V, VDS =+5V
Forward Transconductance
GFS
1.4
mmho
VGS = +0.5V
VDS = +5.5V
Transconductance Mismatch
GFS
1.8
%
Output Conductance
GOS
68
mho
VGS =+0.5V
VDS = +5.5V
Drain Source On Resistance
RDS (ON)
540
VDS = +0.1V
VGS = +0.0V
Drain Source On Resistance
RDS (ON)
5
%
Tolerance
Drain Source On Resistance
RDS (ON)
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
V
IDS = 1.0
A
Voltage
VGS = -4.5V
Drain Source Leakage Current
1
IDS (OFF)
10
100
pA
VGS = -4.5V, VDS =+5V
4
nA
TA = 125
C
Gate Leakage Current
1
IGSS
3
30
pA
VDS = 0V VGS = +10V
1
nA
TA =125
C
Input Capacitance
CISS
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
pF
Turn-on Delay Time
ton
10
ns
V+ = 5V RL= 5K
Turn-off Delay Time
toff
10
ns
V+ = 5V RL= 5K
Crosstalk
60
dB
f = 100KHz
ALD114835 / ALD114935
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