e
EPAD
TM
N A
B L
E D
E
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ORDERING INFORMATION
*N/C pins are internally connected.
Connect to V- to reduce noise
PC, SC PACKAGES
PA, SA PACKAGES
PIN CONFIGURATION
V
GS(th)
= -0.4V
ALD114804/ALD114804A/ALD114904/ALD114904A
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD
MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-
Channel MOSFETS matched at the factory using ALD's proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for
exceptional device electrical characteristics matching. As these devices are on
the same monolithic chip, they also exhibit excellent temperature tracking char-
acteristics. They are versatile as design components for a broad range of analog
applications, such as basic building blocks for current sources, differential ampli-
fier input stages, transmission gates, and multiplexer applications.
Besides matched pair electrical characteristics, each individual MOSFET also
exhibits well controlled parameters, enabling the user to depend on tight design
limits corresponding to well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are suitable for switching and amplifying applica-
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems
where low input bias current, low input capacitance and fast switching speed are
desired. These devices exhibit well controlled turn-off and sub-threshold
charactersitics and therefore can be used in designs that depend on sub-thresh-
old characteristics.
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in
precision applications which require very high current gain, beta, such as current
mirrors and current sources. A sample calculation of the DC current gain at a
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is
recommended that the user, for most applications, connect V+ pin to the most
positive voltage potential (or left open unused) and V- and N/C pins to the most
negative voltage potential in the system. All other pins must have voltages within
these voltage limits.
Depletion mode (normally ON)
Precision Gate Threshold Voltages: -0.4V +/- 0.02V
Nominal R
DS(ON)
@V
GS
=0.0V of 5.4K
Matched MOSFET to MOSFET characteristics
Tight lot to lot parametric control
Low input capacitance
V
GS(th)
match (V
OS
) -- 20mV
High input impedance -- 10
12
typical
Positive, zero, and negative V
GS(th)
temperature coefficient
DC current gain >10
8
Low input and output leakage currents
Operating Temperature Range*
0C to +70C
0C to +70C
16-Pin
16-Pin 8-Pin 8-Pin
Plastic Dip
SOIC Plastic Dip
SOIC
Package
Package Package
Package
ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA
ALD114804 PC ALD114804SC
ALD114904PA
ALD114904SA
APPLICATIONS
Functional replacement of Form B (NC) relays
Ultra low power (nanowatt) analog and digital
circuits
Ultra low operating voltage (<0.2V) analog and
digital circuits
Sub-threshold biased and operated circuits
Zero power fail safe circuits in alarm systems
Backup battery circuits
Power failure and fail safe detector
Source followers and high impedance buffers
Precision current mirrors and current sources
Capacitives probes and sensor interfaces
Charge detectors and charge integrators
Differential amplifier input stage
High side switches
Peak detectors and level shifters
Sample and Hold
Current multipliers
Discrete analog switches and multiplexers
Discrete voltage comparators
N/C*
1
2
3
14
15
16
4
13
5
12
N/C*
6
7
8
10
11
G
N1
D
N1
N/C*
D
N4
N/C*
G
N4
9
G
N3
D
N3
D
N2
G
N2
V
+
S
34
S
12
V
-
V
+
V
-
ALD114804
M 4
M 3
M 1
M 2
V
-
V
-
V
-
V
-
V-
G
N1
D
N1
N/C*
S
12
D
N2
G
N2
ALD114904
1
2
3
6
7
8
4
5
M 1
M 2
V-
N/C*
V-
V-
Rev 1.0-0506 2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
* Contact factory for industrial temp. range or user-specified threshold voltage values
FEATURES
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
2
Notes:
1
Consists of junction leakage currents
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
10.6V
Gate-Source voltage,
V
GS
10.6V
Power dissipation
500 mW
Operating temperature range PA, SA, PC, SC package
0C to +70C
Storage temperature range
-65C to +150C
Lead temperature, 10 seconds
+260C
ALD114808A / ALD114908A ALD110848 / ALD114908
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test Condition
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Gate Threshold Voltage
VGS(th)
-0.42
-0.40
-0.38
-0.44
-0.40
-0.36
V
IDS =1A
VDS = 0.1V
Offset Voltage
VOS
2
5
7
20
mV
IDS =1A
VGS1-VGS2
VGS1-VGS2 Tempco
VOS
5
5
V/ C
VDS1 = VDS2
GateThreshold Tempco
VGS(th)
-1.7
-1.7
mV/ C
ID = 1A
0.0
0.0
ID = 20A, VDS = 0.1V
+1.6
+1.6
ID = 40A
On Drain Current
IDS (ON)
12.0
12.0
mA
VGS = +9.1V
3.0
3.0
VGS = +3.6V
VDS = +5V
Forward Transconductance
GFS
1.4
1.4
mmho
VGS =+3.6 V
VDS = +8.6V
Transconductance Mismatch
GFS
1.8
1.8
%
Output Conductance
GOS
68
68
mho
VGS =+3.6V
VDS = +8.6V
Drain Source On Resistance
RDS (ON)
500
500
VDS = 0.1V
VGS = +3.6V
Drain Source On Resistance
RDS (ON)
5.4
5.4
K
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
RDS (ON)
10
10
%
Tolerance
Drain Source On Resistance
RDS (ON)
0.5
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
10
V
IDS = 1.0A
Voltage
VGS = -1.4V
Drain Source Leakage Current
1
IDS (OFF)
10
100
10
100
pA
VGS = -1.4V, VDS =+5V
4
4
nA
TA = 125C
Gate Leakage Current
1
IGSS
3
30
3
30
pA
VDS = 0V VGS = +10V
1
1
nA
TA =125C
Input Capacitance
CISS
2.5
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
0.1
pF
Turn-on Delay Time
ton
10
10
ns
V+ = 5V RL= 5K
Turn-off Delay Time
toff
10
10
ns
V+ = 5V RL= 5K
Crosstalk
60
60
dB
f = 100KHz
PDF 
ZIP