e
EPAD
TM
N A
B L
E D
E
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
*N/C pins are internally connected.
Connect to V- to reduce noise
PC, SC PACKAGES
PA, SA PACKAGES
PIN CONFIGURATION
V
GS(th)
= -1.3V
ALD114813/ALD114913
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD
MATCHED PAIR MOSFET ARRAYS
GENERAL DESCRIPTION
ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched
at the factory using ALD's proven EPAD CMOS technology. These devices are
intended for low voltage, small signal applications. They are excellent functional
replacements for normally-closed relay applications, as they are normally on (con-
ducting) without any power applied, but could be turned off or modulated when
system power supply is turned on. These MOSFETS have the unique character-
istics of, when the gate is grounded, operating in the resistance mode for low
drain voltage levels and in the current source mode for higher voltage levels and
providing a constant drain current.
These MOSFETS are designed for exceptional device electrical characteristics
matching. As these devices are on the same monolithic chip, they also exhibit
excellent temperature tracking characteristics. They are versatile as design com-
ponents for a broad range of analog applications, and they are basic building
blocks for current sources, differential amplifier input stages, transmission gates,
and multiplexer applications. Besides matched pair electrical characteristics, each
individual MOSFET also exhibits well controlled parameters, enabling the user to
depend on tight design limits. Even units from different batches and different date
of manufacture have correspondingly well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying appli-
cations in single 1.5V to +/-5V systems where low input bias current, low input
capacitance and fast switching speed are desired. These devices exhibit well
controlled turn-off and sub-threshold charactersitics and therefore can be used in
designs that depend on sub-threshold characteristics.
The ALD114813/ALD114913 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user, for
most applications, connect V+ pin to the most positive voltage potential (or left
open unused) and V- and N/C pins to the most negative voltage potential in the
system. All other pins must have voltages within these voltage limits.
Operating Temperature Range*
0C to +70C
0C to +70C
16-Pin
16-Pin 8-Pin 8-Pin
Plastic Dip
SOIC Plastic Dip
SOIC
Package
Package Package
Package
ALD114813PC
ALD114813SC
ALD114913PA
ALD114913SA
ORDERING INFORMATION
FEATURES
Depletion mode (normally ON) without power
Precision Gate Threshold Voltages: -1.30V +/- 0.04V
Nominal R
DS(ON)
@V
GS
=0.0V of 1.3K
Matched MOSFET to MOSFET characteristics
Tight lot to lot parametric control
Low input capacitance
V
GS(th)
match (V
OS
) -- 20mV
High input impedance -- 10
12
typical
Positive, zero, and negative V
GS(th)
temperature coefficient
DC current gain >10
8
Low input and output leakage currents
APPLICATIONS
Functional replacement of Form B (NC) relay
Zero power fail safe circuits
Backup battery circuits
Power failure detector
Fail safe signal detector
Source followers and buffers
Precision current mirrors
Precision current sources
Capacitives probes
Sensor interfaces
Charge detectors
Charge integrators
Differential amplifier input stage
High side switches
Peak detectors
Sample and Hold
Alarm systems
Current multipliers
Analog switches
Analog multiplexers
Voltage comparators
Level shifters
N/C*
1
2
3
14
15
16
4
13
5
12
N/C*
6
7
8
10
11
G
N1
D
N1
N/C*
D
N4
N/C*
G
N4
9
G
N3
D
N3
D
N2
G
N2
V
+
S
34
S
12
V
-
V
+
V
-
ALD114813
M 4
M 3
M 1
M 2
V
-
V
-
V
-
V
-
V-
G
N1
D
N1
N/C*
S
12
D
N2
G
N2
ALD114913
1
2
3
6
7
8
4
5
M 1
M 2
V-
N/C*
V-
V-
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 1.0-0506 2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ALD114813/ALD114913
Advanced Linear Devices
2
Notes:
1
Consists of junction leakage currents
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
10.6V
Gate-Source voltage,
V
GS
10.6V
Power dissipation
500 mW
Operating temperature range PA, SA, PC, SC package
0C to +70C
Storage temperature range
-65C to +150C
Lead temperature, 10 seconds
+260C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
ALD114813/ALD114913
Gate Threshold Voltage
VGS(th)
-1.34
-1.30
-1.26
V
IDS =1A
VDS = 0.1V
Offset Voltage
VOS
7
20
mV
IDS =1A
VGS(th)1-VGS(th)2
Offset Voltage Tempco
TCVOS
5
V/ C
VDS1 = VDS2
GateThreshold Voltage Tempco
TCVGS(th)
-1.7
mV/ C
ID= 1A
0.0
ID= 20A, VDS = 0.1V
+1.6
ID= 40A
On Drain Current
IDS (ON)
12.0
mA
VGS = +8.2 V
3.0
VGS = +2.7V
VDS = +5V
Forward Transconductance
GFS
1.4
mmho
VGS = +2.7V
VDS = +7.7V
Transconductance Mismatch
GFS
1.8
%
Output Conductance
GOS
68
mho
VGS =+2.7V
VDS = +7.7V
Drain Source On Resistance
RDS (ON)
500
VDS = 0.1V
VGS = +2.7V
Drain Source On Resistance
RDS (ON)
1.3
K
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
RDS (ON)
7
%
Tolerance
Drain Source On Resistance
RDS (ON)
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
V
IDS = 1.0A
Voltage
VGS = -2.3V
Drain Source Leakage Current
1
IDS (OFF)
10
100
pA
VGS =-2.3V, VDS =+5V
4
nA
TA = 125C
Gate Leakage Current
1
IGSS
3
30
pA
VDS = 0V VGS = +10V
1
nA
TA =125C
Input Capacitance
CISS
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
pF
Turn-on Delay Time
ton
10
ns
V+ = 5V RL= 5K
Turn-off Delay Time
toff
10
ns
V+ = 5V RL= 5K
Crosstalk
60
dB
f = 100KHz
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