Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
1823 GHz GaAs MMIC
Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 14 dB Typical Small Signal Gain
I 24.5 dBm Typical P
1 dB
Output Power
at 23 GHz
I 0.25 m Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA022P1-00
Description
Alpha's two-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 24.5 dBm with 13 dB
associated gain and 11% power added efficiency at
23 GHz. The chip uses Alpha's proven 0.25
m MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance. A broad range of applications exist in both
the high reliability and commercial areas where high power
and gain are required.
Parameter
Condition
Symbol
Min.
Typ.
2
Max.
Unit
Drain Current (at Saturation)
I
DS
300
390
mA
Small Signal Gain
F = 1823 GHz
G
12
14
dB
Input Return Loss
F = 1823 GHz
RL
I
-15
-10
dB
Output Return Loss
F = 1823 GHz
RL
O
-17
-10
dB
Output Power at 1 dB Gain Compression
F = 23 GHz
P
1 dB
22
24.5
dBm
Saturated Output Power
F = 23 GHz
P
SAT
24
25.5
dBm
Gain at Saturation
F = 23 GHz
G
SAT
13
dB
Thermal Resistance
1
JC
39
C/W
Electrical Specifications at 25C (V
DS
= 6 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0.000
0.520
0.086
1.700
2.784
0.329
3.400
1.613
1.371
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
22 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
1823 GHz GaAs MMIC Power Amplifier
AA022P1-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
-40
-30
-20
-10
0
10
20
18
26
24
22
20
S
11
S
12
S
21
S
22
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (V
DS
= 6 V)
16
17
18
19
20
21
22
23
24
25
26
18
21
22
23
24
25
Frequency (GHz)
P
OUT
(dBm)
Output Characteristics as a Function of
Frequency and Input Drive Level
(V
DS
= 6 V)
8
10
12
14
16
P
IN
Typical Performance Data
RF IN
6 V
6 V
.01
F
.01
F
50 pF
50 pF
50 pF
50 pF
RF OUT
Bias Arrangement
Detail A
V
DS
V
DS
RF IN
RF OUT
V
DS
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
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