Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
23.526.5 GHz GaAs MMIC
Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 17 dB Typical Small Signal Gain
I 24 dBm Typical P
1 dB
Output Power
at 26.5 GHz
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD
MT 2010
Chip Outline
AA026P2-00
Description
Alpha's three-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 24 dBm and a typical P
SAT
of 26 dBm at 26.5 GHz. The chip uses Alpha's proven
0.25
m MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the commercial and military
areas where high power and gain are required.
Parameter
Condition
Symbol
Min.
Typ.
2
Max.
Unit
Drain Current (at Saturation)
I
DS
520
700
mA
Small Signal Gain
F = 23.526.5 GHz
G
15
17
dB
Input Return Loss
F = 23.526.5 GHz
RL
I
-17
-10
dB
Output Return Loss
F = 23.526.5 GHz
RL
O
-20
-10
dB
Output Power at 1 dB Gain Compression
F = 26.5 GHz
P
1 dB
23
24
dBm
Saturated Output Power
F = 26.5 GHz
P
SAT
24
26
dBm
Gain at Saturation
F = 26.5 GHz
G
SAT
14
dB
Thermal Resistance
1
JC
17
C/W
Electrical Specifications at 25C (V
DS
= 6 V)
0.000
0.000
0.605
1.271
2.510
0.130
3.230
1.014
2.068
3.080
2.960
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
22 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
23.526.5 GHz GaAs MMIC Power Amplifier
AA026P2-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
S
21
S
11
S
22
20
10
0
-10
-20
-30
-40
-50
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (V
DS
= 6 V)
(dB)
20
21
22
23
24
25
26
27
28
29
30
30
25
20
15
10
5
0
-10
-7
-4
-1
2
5
8
11
P
IN
(dBm)
Output Characteristics as a
Function of Input Drive Level
(F = 26.5 GHz, V
DS
= 6 V)
P
OUT
(dBm)
Typical Performance Data
6 V
RF IN
RF OUT
6 V
.01
F 50 pF
.01
F 50 pF
Bias Arrangement
Detail A
RF IN
RF OUT
V
DS
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
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