Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
2729 GHz GaAs MMIC
Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 22 dBm Typical P
1 dB
Output Power
at 28 GHz
I 13.5 dB Typical Small Signal Gain
I 0.25 m Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028P1-00
Description
Alpha's two-stage balanced Ka band GaAs MMIC
power amplifier has a typical P
1 dB
of 22 dBm with
12.5 dB associated gain and 10% power added efficiency
at 28 GHz. The chip uses Alpha's proven 0.25
m
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for S-parameters and power characteristics prior
to shipment for guaranteed performance. A broad range
of applications exist in both the commercial and high
reliability areas where high power and gain are required.
Parameter
Condition
Symbol
Min.
Typ.
2
Max.
Unit
Drain Current (at Saturation)
I
DS
300
400
mA
Small Signal Gain
F = 2729 GHz
G
11
13.5
dB
Input Return Loss
F = 2729 GHz
RL
I
-13
-10
dB
Output Return Loss
F = 2729 GHz
RL
O
-16
-10
dB
Output Power at 1 dB Gain Compression
F = 28 GHz
P
1 dB
21
22
dBm
Saturated Output Power
F = 28 GHz
P
SAT
22
23
dBm
Gain at Saturation
F = 28 GHz
G
SAT
11
dB
Thermal Resistance
1
JC
51
C/W
Electrical Specifications at 25C (V
DS
= 6 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0.000
0.519
2.784
3.400
0.329
0.086
1.371
1.700
1.613
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
22 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
2729 GHz GaAs MMIC Power Amplifier
AA028P1-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
-40
-30
-20
-10
0
10
20
26
28
30
32
S
11
S
12
S
21
S
22
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (V
DS
= 6 V)
27
29
31
Frequency (GHz)
Output Characteristics as a Function of
Frequency and Input Drive Level
(V
DS
= 6 V)
10
27
28
29
30
31
32
12
14
16
18
20
22
24
26
P
OUT
(dBm)
14
P
IN
10
8
6
4
12
Typical Performance Data
RF IN
RF OUT
6 V
.01
F
.01
F
50 pF
50 pF
50 pF
50 pF
6 V
Bias Arrangement
Detail A
V
DS
V
DS
RF IN
RF OUT
V
DS
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
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