Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
1
Specifications subject to change without notice. 1/01A
2832 GHz GaAs MMIC
Driver Amplifier
Features
s
Single Bias Supply Operation (5 V)
s
19 dB Typical Small Signal Gain
s
16 dBm Typical P
1 dB
Output Power
at 28 GHz
s
0.25
m Ti/Pd/Au Gates
s
100% On-Wafer RF and DC Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA031P1-00
Description
Alpha's three-stage reactively-matched 2832 GHz
GaAs MMIC driver amplifier has typical small signal gain
of 19 dB with a typical P
1 dB
of 16 dBm at 28 GHz. The
chip uses Alpha's proven 0.25
m MESFET technology,
and is based upon MBE layers and electron beam
lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a
rugged, reliable part with through-substrate via holes and
gold-based backside metallization to facilitate a
conductive epoxy die attach process. All chips are
screened for gain, output power and S-parameters prior
to shipment for guaranteed performance. Designed for
2832 GHz LMDS and digital radio bands.
Parameter
Condition
Symbol
Min.
Typ.
2
Max.
Unit
Drain Current
I
DS
145 200
mA
Small Signal Gain
F = 2832 GHz
G
17
19
dB
Input Return Loss
F = 2832 GHz
RL
I
-10
-6
dB
Output Return Loss
F = 2832 GHz
RL
O
-15
-10
dB
Output Power at 1 dB Gain Compression
F = 28 GHz
P
1 dB
14
16
dBm
Saturated Output Power
F = 28 GHz
P
SAT
15
18
dBm
Thermal Resistance
1
JC
101
C/W
Electrical Specifications at 25C (V
DS
= 5 V)
0.000
0.085
2.500
2.415
2.093
0.000
1.365
1.255
0.651
0.663
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
16 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
2832 GHz GaAs MMIC Driver Amplifier
AA031P1-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 1/01A
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (V
DS
= 5 V)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
20
22
24
26
28
30
32
34
Gain & Return Losses (dB)
S
11
S
12
S
21
S
22
Typical Power Sweep (V
DS
= 5 V)
11
12
13
14
15
16
17
18
19
20
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
Input Power @ 28 GHz (dBm)
Output Power (dBm), Gain (dB)
Gain
Output Power @ 28 GHz
Typical Performance Data
V
D
= 5 V
RF IN
RF OUT
.01
F
50 pF
Bias Arrangement
Detail A
RF IN
RF OUT
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(5 V recommended). For biasing off, reverse the biasing on procedure.
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