Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
1
Specifications subject to change without notice. 7/00A
2836 GHz GaAs MMIC
Low Noise Amplifier
Features
s
Dual Bias Supply Operation (4.5 V)
s
2.8 dB Typical Noise Figure at 32 GHz
s
12 dB Typical Small Signal Gain
s
0.25
m Ti/Pd/Au Gates
s
100% On-Wafer RF, DC and Noise Figure
Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA035N1-00, AA035N2-00
Description
Alpha's two-stage balanced 2836 GHz MMIC low noise
amplifier has typical small signal gain of 12 dB with a
typical noise figure of 2.6 dB at 32 GHz. The chip uses
Alpha's proven 0.25
m low noise PHEMT technology, and
is based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate a conductive epoxy die
attach process.
Parameter
Condition
Symbol
Min.
Typ.
3
Max.
Unit
Drain Current
I
DS
70
90
mA
Small Signal Gain
F = 2836 GHz
G
10
12
dB
Noise Figure
F = 32 GHz
NF
2.8
3.2
dB
Input Return Loss
F = 2836 GHz
RL
I
-17
-12
dB
Output Return Loss
F = 2836 GHz
RL
O
-20
-12
dB
Output Power at 1 dB Gain Compression
1
F = 35 GHz
P
1 dB
10
dBm
Thermal Resistance
2
JC
50
C/W
AA035N1-00 Electrical Specifications at 25C (V
DS
= 4.5 V, I
D
= 70 mA)
Parameter
Condition
Symbol
Min.
Typ.
3
Max.
Unit
Drain Current
I
DS
70
90
mA
Small Signal Gain
F = 2836 GHz
G
9
12
dB
Noise Figure
F = 32 GHz
NF
3.0
3.8
dB
Input Return Loss
F = 2836 GHz
RL
I
-17
-12
dB
Output Return Loss
F = 2836 GHz
RL
O
-20
-12
dB
Output Power at 1 dB Gain Compression
1
F = 35 GHz
P
1 dB
10
dBm
Thermal Resistance
2
JC
50
C/W
AA035N2-00 Electrical Specifications at 25C (V
DS
= 4.5 V, I
D
= 70 mA)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.269
0.000
0.000
0.116
0.627
0.985
1.343
1.701
2.059
2.417
2.690
1.598
2.370
2.255
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
2836 GHz GaAs MMIC Low Noise Amplifier
AA035N1-00, AA035N2-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 7/00A
-50
-40
-30
-20
-10
0
10
20
30
32
34
36
38
40
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (V
D
= 4.5 V)
S
21
S
22
S
12
S
11
-4
-2
0
2
4
6
8
10
12
14
-0.5
-0.4
-0.3
-0.2
-0.1
0
(V
G
)
(dB)
Typical 35 GHz Noise Figure and
Gain as a Function of Gate Voltage (VG)
Noise Figure
I
D
Gain
0
20
40
60
80
100
120
Drain Current (mA)
Typical Noise Figure Performance
vs. Frequency
2.0
2.5
3.0
3.5
4.0
4.5
5.0
30
32
34
36
38
40
Frequency (GHz)
Noise Figure (dB)
Typical Performance Data
V
G
RF IN
RF OUT
V
D
= 4.5 V
.01
F 50 pF
.01
F
50 pF
V
G
V
D
= 4.5 V
.01
F 50 pF
.01
F
50 pF
Bias Arrangement
For biasing on, adjust V
G
from zero to the desired value
(-0.3 V typically is optimum). Then adjust V
D
from zero to the desired value
(4.5 V recommended). For biasing off, reverse the biasing on procedure.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
5.5 V
DC
Power In (P
IN
)
16 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
2836 GHz GaAs MMIC Low Noise Amplifier
AA035N1-00, AA035N2-00
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
3
Specifications subject to change without notice. 7/00A
Detail A
RF IN
RF OUT
G
D
G
D
G
D
G
D
V
G
V
D
V
G
V
D
SEE
DETAIL
A
D
G
Circuit Schematic
PDF 
ZIP