Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
1
Specifications subject to change without notice. 1/01A
3135 GHz GaAs MMIC
Driver Amplifier
Features
s
Single Bias Supply Operation (5 V)
s
19 dB Typical Small Signal Gain
s
17 dBm Typical P
1 dB
Output Power
at 35 GHz
s
0.25
m Ti/Pd/Au Gates
s
100% On-Wafer RF and DC Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA035P3-00
Description
Alpha's three-stage reactively-matched Ka band GaAs
MMIC driver amplifier has a typical P
1 dB
of 17 dBm with
18 dB associated gain at 35 GHz. The chip uses Alpha's
proven 0.25
m MESFET technology, which is based upon
MBE layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. The amplifier is a self-bias design requiring a
single positive drain bias to one of any three bonding sites.
All chips are screened for S-parameters prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where high gain and power are
required.
Parameter
Condition
Symbol
Min.
Typ.
3
Max.
Unit
Drain Current
I
DS
275 350
mA
Small Signal Gain
F= 3135 GHz
G
15
19
dB
Noise Figure
1
F= 35 GHz
NF
10.5
dB
Input Return Loss
F= 3135 GHz
RL
I
-14
-10
dB
Output Return Loss
F= 3135 GHz
RL
O
-16
-10
dB
Output Power at 1 dB Gain Compression
F= 35 GHz
P
1 dB
15
17
dBm
Saturated Output Power
F= 35 GHz
P
SAT
16
19
dBm
Thermal Resistance
2
JC
66
C/W
Electrical Specifications at 25C (V
DS
= 5 V)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0.000
1.250
1.905
3.810
1.554
2.471
3.386
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Bias Voltage (V
D
)
7 V
DC
Power In (P
IN
)
19 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
3135 GHz GaAs MMIC Driver Amplifier
AA035P3-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 1/01A
-30
-20
-10
0
10
20
30
30
31
32
33
34
35
36
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (V
DS
= 5 V)
S
21
S
11
S
22
P
IN
(dBm)
P
OUT
(dBm)
10
12
14
16
18
20
-10
-8
-6
-4
-2
0
2
4
Output Characteristic as a
Function of Input Drive Level
(F = 35 GHz, V
DS
= 5 V)
Typical Performance Data
5 V
.01
F
50 pF
RF IN
RF OUT
Bias Arrangement
Detail A
RF IN
RF OUT
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(4 V6 V recommended). For biasing off, reverse the biasing on procedure.
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