Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
300
360
350
425
R
JL
280
320
Junction and Storage Temperature Range
A
P
D
C
0.35
0.22
-55 to 150
T
A
=70C
I
D
-1.2
-1.0
-10
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
8
Gate-Source Voltage
Drain-Source Voltage
-20
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO7407
P-Channel Enhancement Mode Field Effect Transistor
May 2003
Features
V
DS
(V) = -20V
I
D
= -1.2 A
R
DS(ON)
< 135m
(V
GS
= -4.5V)
R
DS(ON)
< 170m
(V
GS
= -2.5V)
R
DS(ON)
< 220m
(V
GS
= -1.8V)
General Description
The AO7407 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
S
G
D
SC-70
SOT 323
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO7407
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-0.3
-0.55
-1
V
I
D(ON)
-10
A
111
135
T
J
=125C
141
175
137
170
m
169
220
m
g
FS
4
7
S
V
SD
-0.78
-1
V
I
S
-0.6
A
C
iss
540
pF
C
oss
72
pF
C
rss
49
pF
R
g
12
Q
g
6.2
nC
Q
gs
0.54
nC
Q
gd
1.44
nC
t
D(on)
12
ns
t
r
10.7
ns
t
D(off)
74
ns
t
f
28.7
ns
t
rr
24.5
ns
Q
rr
17.4
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-1A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-1.8V, I
D
=-1A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-1.2A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-2.5V, I
D
=-1A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3A
I
F
=-1A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-1A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=15
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-1.5V
-2.0V
-2.5V
-4.5V
-8V
-3.0V
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
25C
125C
V
DS
=-5V
75
100
125
150
175
200
225
0
2
4
6
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
ed
On
-R
esistan
ce
V
GS
=-2.5V
V
GS
=-1.8V
V
GS
=-4.5V
75
100
125
150
175
200
225
1
2
3
4
5
6
7
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-1A
25C
125C
I
D
=-1A
Alpha & Omega Semiconductor, Ltd.
AO7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts)
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
10
s
T
J(Max)
=150C
T
A
=25C
V
DS
=-10V
I
D
=-1.0A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=360C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. OTHER NAME OF THIS PACKAGE IS CALLED SOT-323
SC-70 3L Package Data
RECOMMENDATION OF LAND PATTERN
P N W
NOTE:
P - PART NUMBER CODE.
N - FOUNDRY AND ASSEMBLY LOCATION CODE
W - YAER AND WEEK CODE.
L T - ASSEMBLY LOT CODE.
CODE
AO7407
7
PART NO.
SC-70 3L PART NO. CODE
PACKAGE MARKING DESCRIPTION
Rev. A
0.10
0.00
A1
1.00
0.20
0.40
1.35
0.40
2.20
2.20
0.30
0.65 BSC
e
1
0.10
L
1
e1
1.30 BSC
8
0.25
0.90
0.10
0.30
2.00
1.15
1.80
D
E1
F
E
b
C
A2
1.10
MAX
DIMENSIONS IN MILLIMETERS
SYMBOLS
0.90
MIN
A
L T
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