June 1999
alpha microelectronics gmbh
Description
The
0560 contains six N-channel power MOS
FET with V
DSS
= 500 V in half-bridge configuration.
These enhancement-mode Power MOSFET array
utilizes a DMOS structure and alpha's dielectric
isolated high voltage DIMOST technology.
Each MOSFET provides an accurate fraction of the
drain current through a current-sense terminal to
be used for control or protection. The provision of a
kelvin source connection eliminates problems of
common source inductance. An additional
second current-sense terminal of the low-side
power MOSFET eases an independent current
monitoring in every half bridge.
Features
q
Six dielectric isolated N-channel power
MOSFET with V
DSS
= 500 V, R
DS(on)
= 10
q
Three fast switching half-bridges
q
High-side power MOSFET with a current sense
source
q
Low-side power MOSFET with two current
sense sources
q
Integrated gate protection diodes
q
High density mounting
q
Temperature range -25C ... +85C
q
Package
QPF 64 -
0560EQ
Die
-
0560EX
Applications
q
Three Phase Inverter
q
Suitable for motor driver and solenoid driver
Equivalent Circuit
K1H
SD1
G1H
G1L
K1L
S1L
C1H
D1H
0560
C1L
K2H
SD2
G2H
G2L
K2L
S2L
C2H
D2H
C2L
K3H
SD3
G3H
G3L
K3L
S3L
C3H
D3H
C3L
CM1
CM2
CM3
M1H
M1L
M2H
M2L
M3H
M3L
N-Channel Power MOSFET Array
0560
Preliminary Data Sheet
Page 2 of 4
alpha microelectronics gmbh
June 1999
Pin Description
Symbol
Description
D1H, D2H, D3H
Drain terminal of the high-side MOSFET, supply terminal of the half bridge
G1H, G2H, G3H
Gate terminal of the high-side MOSFET
SD1, SD2, SD3
Output of the half bridge,
connection Source of high-side MOSFET to Drain of low-side MOSFET
C1H, C2H, C3H
Current-sense source terminal of the high-side MOSFET
K1H, K2H, K3H
Kelvin source terminal of the high-side MOSFET
G1L, G2L, G3L
Gate terminal of the low-side MOSFET
S1L, S2L, S3L
Source terminal of the low-side MOSFET, ground terminal of the half bridge
C1L, C2L, C3L
Current-sense source terminal of the low-side MOSFET
CM1, CM2, CM3
Second current-sense source terminal of the low-side MOSFET
K1L, K2L, K3L
Kelvin source terminal of the low-side MOSFET
Pinning / Pad Coordinates (QFP64 / Die)
Symbol
Pin
Pad-X
in m
Pad-Y
in m
Symbol
Pin
Pad-X
in m
Pad-Y
in m
G1L
1
200
4850
G3L
16
200
1100
C1H
2
200
4600
C3L
17
200
850
K1H
3
200
4350
K3L
18
200
600
G1L
4
200
4100
D1H
50, 51
5000
5000
C1L
5
200
3850
SD1
48, 49
5000
4500
K1L
6
200
3600
CM1
47
5000
4100
G2H
7
200
3350
S1L
53, 54
4500
4000
C2H
8
200
3100
D2H
44, 45
5000
3200
K2H
9
200
2850
SD2
42, 43
5000
2700
G2L
10
200
2600
CM2
41
5000
2400
C2L
11
200
2350
S2L
39, 40
4500
2200
K2L
12
200
2100
D3H
37, 38
5000
1500
G3H
13
200
1850
SD3
35, 36
5000
1000
C3H
14
200
1600
CM3
34
5000
700
K3H
15
200
1350
S3L
31, 32
4500
500
June 1999
alpha microelectronics gmbh
Page 3 of 4
Absolute Maximum Ratings
at T
amb
= -25 C ... +85 C
Symbol
Parameter
Min
Max
Unit
V
DS
Drain-to-Source Voltage
500
V
I
DM
Peak Drain Current
1.2
A
I
D1
T
j
= 95C, Continuous Drain Current, V
GS
= 10 V
tbd
A
I
D2
T
j
= 145C, Continuous Drain Current, V
GS
= 10 V
tbd
A
V
GS
Gate-to-Source Voltage
-0.3
20
V
T
j
Junction Temperature
-25
150
C
T
stg
Storage Temperature
-55
150
C
Electrical Characteristics
DC Characteristics
at T
amb
= 25 C
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
GS
= 0, I
D
= 100 A
500
V
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS
= 10 V, I
D
= 0.2 A
tbd
12.5
I
DSS
Drain-to-Source Leakage Current
V
DS
= 450 V, V
GS
= 0
10
A
V
GS
Gate-to-Source Threshold Voltage
V
GS
= V
DS
, I
D
= 100 A
1.5
2.5
V
I
GSS
Gate-to-Source Leakage Current
V
GS
= 20 V
100
nA
Q
g
Total Gate Charge
V
DS
= 250 V, I
D
= 0.5 A
tbd
nC
C
iss
Input Capacitance
tbd
pF
C
oss
Output Capacitance
tbd
pF
C
rss
Output Capacitance
tbd
pF
r1
Current Sense Ratio I
Dxx
/ I
Cxx
I
D
= 0.2 A, V
GS
= 10 V
tbd
r2
Current Sense Ratio I
DxL
/ I
CMx
I
D
= 0.2 A, V
GS
= 10 V
tbd
V
SD
Diode Forward Voltage
I
D
= 0.2 A
tbd
V
R
thja
Thermal Resistance Junction-to-Ambient
70
K/W
AC Characteristics
at T
amb
= 25 C
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-On Delay Time
V
DS
= 250 V, I
D
= 0.5 A
tbd
ns
t
r
Rise Time
V
DS
= 250 V, I
D
= 0.5 A
tbd
ns
t
d(off)
Turn-Off Delay Time
V
DS
= 250 V, I
D
= 0.5 A
tbd
ns
t
f
Fall Time
V
DS
= 250 V, I
D
= 0.5 A
tbd
ns
Page 4 of 4
alpha microelectronics gmbh
June 1999
Packaging QFP64
64 Pins a 0,4
1,00
1,00
12x1,00=12,00
14
0,1
18x1,00=18,00
20
0,1
23,2
19
64
52
51
33
32
20
1
Pin 1
3,4 max.
2,57 - 2,87
17,2
64-Pin Plastic Quad Flat Package
Note
It is not given warranty that the declared circuits, devices, facilities, components, assembly groups or treatments included herein
are free from legal claims of third parties.
The declared data are serving only to description of product. They are not guarantee properties as defined by law. The examples
are given without obligation and cannot given rise to any liability.
Reprinting this data sheet - or parts of it - is only allowed with a licence of the publisher.
alpha microelectronics gmbh reserves the right to make changes on this specification without notice at any time.
alpha microelectronics gmbh
Im Technologiepark 1
Tel
++49-335-557 1750
15236 Frankfurt (Oder)
Fax
++49-335-557 1759
Germany
Internet
http://www.alpha-microelectronics.de
email
alpha@alpha-microelectronics.de
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