December 2004
Copyright Alliance Semiconductor. All rights reserved.
AS7C332MNTF18A
12/23/04, v 1.2
Alliance Semiconductor
P. 1 of 18
3.3V 2M x 18 Flowthrough SRAM with NTD
TM
Features
Organization: 2,097,152 words 18 bits
NTD
TM
architecture for efficient bus operation
Fast clock to data access: 7.5/8.5/10 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous operation
Flow-through mode
Asynchronous output enable control
Available in 100-pin TQFP package
Byte write enables
Clock enable for operation hold
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate V
DDQ
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic block diagram
Selection guide
-75
-85
-10
Units
Minimum cycle time
8.5
10
12
ns
Maximum clock access time
7.5
8.5
10
ns
Maximum operating current
325
300
375
mA
Maximum standby current
140
130
130
mA
Maximum CMOS standby current (DC)
90
90
90
mA
W
r
it
e Buf
f
er
Address
D
Q
CLK
register
Output
buffer
DQ [a,b]
20
20
CLK
CE0
CE1
CE2
A[19:0]
OE
CEN
Control
CLK
logic
Data
D
Q
CLK
input
register
18
18
OE
2M x 18
SRAM
array
R/W
DQ [a,b]
BWa
BWb
CLK
Q
D
ADV / LD
LBO
burst logic
addr. registers
Write delay
20
ZZ
CLK
18
18
18
18
AS7C332MNTF18A
12/23/04, v 1.2
Alliance Semiconductor
P. 2 of 18
32 Mb Synchronous SRAM products list
1,2
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
PL-SCD
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD
:
Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT
:
Flow-through Burst Synchronous SRAM
NTD
1
-PL
:
Pipelined Burst Synchronous SRAM with NTD
TM
NTD-FT
:
Flow-through Burst Synchronous SRAM with NTD
TM
Org
Part Number
Mode
Speed
2MX18
AS7C332MPFS18A
PL-SCD
200/166/133 MHz
1MX32
AS7C331MPFS32A
PL-SCD
200/166/133 MHz
1MX36
AS7C331MPFS36A
PL-SCD
200/166/133 MHz
2MX18
AS7C332MPFD18A
PL-DCD
200/166/133 MHz
1MX32
AS7C331MPFD32A
PL-DCD
200/166/133 MHz
1MX36
AS7C331MPFD36A
PL-DCD
200/166/133 MHz
2MX18
AS7C332MFT18A
FT
7.5/8.5/10 ns
1MX32
AS7C331MFT32A
FT
7.5/8.5/10 ns
1MX36
AS7C331MFT36A
FT
7.5/8.5/10 ns
2MX18
AS7C332MNTD18A
NTD-PL
200/166/133 MHz
1MX32
AS7C331MNTD32A
NTD-PL
200/166/133 MHz
1MX36
AS7C331MNTD36A
NTD-PL
200/166/133 MHz
2MX18
AS7C332MNTF18A
NTD-FT
7.5/8.5/10 ns
1MX32
AS7C331MNTF32A
NTD-FT
7.5/8.5/10 ns
1MX36
AS7C331MNTF36A
NTD-FT
7.5/8.5/10 ns
1. NTD: No Turnaround Delay. NTD
TM
is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
AS7C332MNTF18A
12/23/04, v 1.2
Alliance Semiconductor
P. 3 of 18
100-pin TQFP - top view
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
LBO
A
A
A A
A1
A0
NC
NC
V
SS
V
DD
NC
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
10
0
99
98
97 96
95
94
93
92
91 90
89
88
87
86
85 84
83
82
81
A A
CE0
CE1
NC
NC
BWb
BW
a
CE2
V
DD
V
SS
CLK
R/W
CEN
OE
ADV/LD
A
A
A
TQFP 14 x 20mm
A
NC
NC
NC
V
DDQ
V
SSQ
NC
NC
DQb0
DQb1
V
SSQ
V
DDQ
DQb2
DQb3
V
SS
V
DD
NC
V
SS
DQb4
DQb5
V
DDQ
V
SSQ
DQb6
DQb7
DQPb
NC
V
SSQ
V
DDQ
NC
NC
NC
A
NC
NC
V
DDQ
V
SSQ
NC
DQPa
DQa7
DQa6
V
SSQ
V
DDQ
DQa5
DQa4
V
SS
ZZ
DQa3
DQa2
V
DDQ
V
SSQ
DQa1
DQa0
NC
NC
V
SSQ
V
DDQ
NC
NC
NC
V
DD
NC
A
AS7C332MNTF18A
12/23/04, v 1.2
Alliance Semiconductor
P. 4 of 18
Functional Description
The AS7C332MNTF18A family is a high performance CMOS 32 Mbit synchronous Static Random Access Memory (SRAM)
organized as 2,097,152 words 18 bits and incorporates a LATE Write.
This variation of the 32Mb+ synchronous SRAM uses the No Turnaround Delay (NTD
TM
) architecture, featuring an enhanced
write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data,
command, and address are all applied to the device on the same clock edge. If a read command follows this write command,
the system must wait for one 'dead' cycle for valid data to become available. This dead cycle can significantly reduce overall
bandwidth for applications requiring random access or read-modify-write operations.
NTD
TM
devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flow-
through read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear.
With NTD
TM
, write and read operations can be used in any order without producing dead bus cycle.
Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full 18
bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied
to the device one clock cycle later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write
operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-selected by
any of the three chip enable inputs.
Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip
select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any
device operations, including burst, can be stalled using the CEN=1, the clock enable input.
The AS7C332MNTF18A operates with a 3.3V 5% power supply for the device core (V
DD
). DQ circuits use a separate
power supply (V
DDQ
) that operates across 3.3V or 2.5V ranges. These devices are available in a 100-pin TQFP package.
TQFP Capacitance
*Guaranteed not tested
TQFP thermal resistance
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
C
IN
*
Address and control pins
V
in
= 0V
5
pF
I/O capacitance
C
I/O
*
I/O pins
V
in
= V
out
= 0V
7
pF
Description
Symbol
Typical
Units
Conditions
Thermal resistance
(junction to ambient)
1
1
This parameter is sampled.
1 layer
JA
40
C/W
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA/JESD51
4 layer
JA
22
C/W
Thermal resistance
(junction to top of case)
1
JC
8
C/W
AS7C332MNTF18A
12/23/04, v 1.2
Alliance Semiconductor
P. 5 of 18
Signal descriptions
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time t
ZZI
is met. After entering SNOOZE MODE, all inputs except ZZ
become disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successful
complete. Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. similarly,
when exiting SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of
SNOOZE MODE.
Signal
I/O Properties
Description
CLK
I
CLOCK
Clock. All inputs except OE, FT, LBO, and ZZ are synchronous to this clock.
CEN
I
SYNC
Clock enable. When de-asserted high, the clock input signal is masked.
A, A0, A1
I
SYNC
Address. Sampled when all chip enables are active and ADV/LD is asserted.
DQ[a,b]
I/O
SYNC
Data. Driven as output when the chip is enabled and OE is active.
CE0, CE1,
CE2
I
SYNC
Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted.
Are ignored when ADV/LD is high.
ADV/LD
I
SYNC
Advance or Load. When sampled high, the internal burst address counter will increment in
the order defined by the LBO input value. (refer to table on page 2) When low, a new
address is loaded.
R/W
I
SYNC
A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE
operation. Is ignored when ADV/LD is high.
BW[a,b]
I
SYNC
Byte write enables. Used to control write on individual bytes. Sampled along with WRITE
command and BURST WRITE.
OE
I
ASYNC
Asynchronous output enable. I/O pins are not driven when OE is inactive.
LBO
I
STATIC
Selects Burst mode. When tied to V
DD
or left floating, device follows interleaved Burst order. When
driven Low, device follows linear Burst order. This signal is internally pulled High.
ZZ
I
ASYNC
Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
NC
-
-
No connect
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