www.docs.chipfind.ru
June 2005
ASM2P2309NZ
rev 0.2
Alliance Semiconductor
2575 Augustine Drive
Santa Clara, CA
Tel: 408.855.4900
Fax: 408.855.4999
www.alsc.com
Notice: The information in this document is subject to change without notice.
Nine Output 3.3V Buffer
Features
One-input to Nine-Output Buffer/Driver
Supports two DIMMs or four SO-DIMMs with one
additional output for feedback to an external or
chipset PLL
Low power consumption for mobile applications
Less than 32mA at 66.6MHz with unloaded
outputs
1nS Input-Output delay
Buffers all frequencies from DC to 133.33MHz
Output-output skew less than 250pS
Multiple V
DD
and V
SS
pins for noise and
electromagnetic interference (EMI) reduction
Space-saving 16-pin 150-mil SOIC Package
3.3V operation
Commercial and Industrial temperature parts are
available
Functional Description
The ASM2P2309NZ is a low-cost buffer designed to
distribute high-speed clocks in mobile PC systems and
desktop PC systems with SDRAM support. The part has
nine outputs, eight of which can be used to drive two
DIMMs or four SO-DIMMs, and the remaining can be used
for external feedback to a PLL. The device operates at
3.3V and outputs can run up to 133.33MHz.
The ASM2P2309NZ is designed for low EMI and power
optimization. It has multiple V
SS
and V
DD
pins for noise
optimization and consumes less than 32mA at 66.6MHz,
making it ideal for the low-power requirements of mobile
systems. It is available in an ultra-compact 150-mil 16-pin
SOIC Package.
Block Diagram
BUF_IN
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
OUTPUT5
OUTPUT6
OUTPUT7
OUTPUT8
OUTPUT9
June 2005
ASM2P2309NZ
rev 0.2
Nine Output 3.3V Buffer
2 of 9
Notice: The information in this document is subject to change without notice.
Pin Configuration
Pin Description
Pin
Signal
Description
4, 8, 13
V
DD
3.3V Digital Voltage Supply
5, 9, 12
GND
Ground
1
BUF_IN Input
Clock
2, 3, 6, 7, 10, 11, 14, 15, 16
OUTPUT [1:9]
Outputs
11
9
10
12
13
14
15
16
V
DD
2
1
3
4
5
6
7
8
OUTPUT2
V
DD
OUTPUT7
OUTPUT8
OUTPUT5
OUTPUT6
V
DD
OUTPUT9
GND
GND
ASM2P2309NZ
OUTPUT3
OUTPUT4
GND
OUTPUT1
BUF_IN
June 2005
ASM2P2309NZ
rev 0.2
Nine Output 3.3V Buffer
3 of 9
Notice: The information in this document is subject to change without notice.
Absolute Maximum Ratings
Parameter
Min
Max
Unit
Supply Voltage to Ground Potential
-0.5
7.0
V
DC Input Voltage (Except BUF_IN)
-0.5
V
DD
+ 0.5
V
Storage Temperature
-65
+150
C
Junction Temperature
150
C
Static Discharge Voltage
(As per JEDEC STD22- A114-B)
>2000 V
Note: These are stress ratings only and functional usage is not implied. Exposure to absolute maximum ratings for prolonged periods can affect device
reliability.
Operating Conditions
Parameter
Description
Min
Max
Unit
V
DD
Supply
Voltage
3.0
3.6
V
(Ambient Operating Temperature), Commercial
0
70
C
T
A
(Ambient Operating Temperature), Industrial
40
85
C
Load Capacitance, Fout < 100MHz
-
30
pF
C
L
Load Capacitance,100MHz < Fout < 133.33MHz
-
15
pF
C
IN
Input
Capacitance
-
7
pF
BUF_IN, OUTPUT [1:9]
Operating Frequency
DC
133.33
MHz
t
PU
Power-up time for all V
DD
's to reach minimum
specified voltage (power ramps must be monotonic)
0.05 50 mS
June 2005
ASM2P2309NZ
rev 0.2
Nine Output 3.3V Buffer
4 of 9
Notice: The information in this document is subject to change without notice.
Electrical Characteristics for Commercial and Industrial Temperature Devices
Parameter
Description
Test Conditions
Min
Max
Unit
V
IL
Input
LOW
Voltage
1
-
0.8 V
V
IH
Input
HIGH
Voltage
1
2.0 - V
I
IL
Input
LOW
Current
V
IN
= 0V
-
50.0
MA
I
IH
Input
HIGH
Current
V
IN
= V
DD
-
100.0
MA
V
OL
Output LOW Voltage
2
I
OL
= 8 mA -
0.4
V
V
OH
Output
HIGH
Voltage
2
I
OH
= 8 mA
2.4
-
V
I
DD
Supply Current
Unloaded outputs at 66.66MHz
-
32
mA
Switching Characteristics for Commercial and Industrial Temperature Devices
3
Parameter
Name
Description
Min
Typ
Max
Unit
t
D
Duty Cycle
2
= t
2
t
1
Measured at 1.4V
40.0
50.0
60.0
%
t
3
Rise Time
2
Measured between 0.8V and 2.0V
-
-
1.50
nS
t
4
Fall Time
2
Measured between 0.8V and 2.0V
-
-
1.50
nS
t
5
Output to Output Skew
2
All outputs equally loaded
-
-
250
pS
t
6
Propagation Delay,
BUF_IN Rising Edge to
OUTPUT Rising Edge
2
Measured at V
DD
/2 1
5
9.2
nS
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