FINAL
Publication# 11419
Rev: E Amendment/0
Issue Date: May 1998
Am27C64
64 Kilobit (8 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
s
Fast access time
-- Speed options as fast as 45 ns
s
Low power consumption
-- 20 A typical CMOS standby current
s
JEDEC-approved pinout
s
Single +5 V power supply
s
10% power supply tolerance standard
s
100% FlashriteTM programming
-- Typical programming time of 1 second
s
Latch-up protected to 100 mA from 1 V to
V
CC
+ 1 V
s
High noise immunity
s
Versatile features for simple interfacing
-- Both CMOS and TTL input/output compatibility
-- Two line control functions
s
Standard 28-pin DIP, PDIP, and 32-pin PLCC
packages
GENERAL DESCRIPTION
The Am27C64 is a 64-Kbit, ultraviolet erasable pro-
grammable read-only memory. It is organized as 8K
words by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast
single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one time programmable (OTP) PDIP and
PLCC packages.
Data can be typically accessed in less than 45 ns, al-
lowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
thus eliminating bus contention in a multiple bus micro-
processor system.
AMD's CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 80 mW in active mode, and
100 W in standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD's
Flashrite programming algorithm (100 s pulses), re-
sulting in a typical programming time of 1 second.
BLOCK DIAGRAM
11419E-1
A0A12
Address
Inputs
PGM#
CE#
OE#
V
CC
V
SS
V
PP
Data Outputs
DQ0DQ7
Output
Buffers
Y
Gating
65,538
Bit Cell
Matrix
X
Decoder
Y
Decoder
Output Enable
Chip Enable
and
Prog Logic
2
Am27C64
PRODUCT SELECTOR GUIDE
CONNECTION DIAGRAMS
Top View
DIP
PLCC
Notes:
1. JEDEC nomenclature is in parenthesis.
2. Don't use (DU) for PLCC.
PIN DESIGNATIONS
A0A12
= Address Inputs
CE# (E#)
= Chip Enable Input
DQ0DQ7
= Data Input/Outputs
OE# (G#)
= Output Enable Input
PGM# (P#)
= Program Enable Input
V
CC
= V
CC
Supply Voltage
V
PP
= Program Voltage Input
V
SS
= Ground
NC
= No Internal Connection
LOGIC SYMBOL
Family Part Number
Am27C64
Speed Options
V
CC
= 5.0 V
5%
-255
V
CC
= 5.0 V
10%
-45
-55
-70
-90
-120
-150
-200
Max Access Time (ns)
45
55
70
90
120
150
200
250
CE# (E#) Access (ns)
45
55
70
90
120
150
200
250
OE# (G#) Access (ns)
30
35
40
40
50
50
50
50
3
4
5
2
1
9
10
11
12
13
23
22
21
20
19
7
8
18
17
6
28
27
16
14
26
25
24
15
A6
A5
A4
A3
A2
A1
A0
DQ0
A7
DQ1
DQ2
V
SS
A8
A9
A11
OE# (G#)
A10
CE# (E#)
DQ7
V
CC
PGM# (P#)
DQ6
NC
DQ5
DQ4
DQ3
V
PP
A12
11419E-2
DQ5
DU
DQ4
DQ3
DU
1
31 30
2
3
4
5
6
7
8
9
10
11
12
13
17 18 19 20
16
15
14
29
28
27
26
25
24
23
22
21
32
A6
A5
A4
A3
A2
A1
A0
NC
DQ0
A8
A9
A11
NC
OE# (G#)
A10
CE# (E#)
DQ7
DQ6
A7
A12
V
PP
V
CC
PGM# (P#)
NC
DQ1
DQ2
V
SS
11419E-3
13
8
DQ0DQ7
A0A12
CE# (E#)
PMG# (P#)
OE# (G#)
11419E-4
Am27C64
3
ORDERING INFORMATION
UV EPROM Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
DEVICE NUMBER/DESCRIPTION
Am27C64
64 Kilobit (8 K x 8-Bit) CMOS UV EPROM
AM27C64
-45
D
C
OPTIONAL PROCESSING
Blank = Standard Processing
B
= Burn-In
TEMPERATURE RANGE
C = Commercial (0
C to +70
C)
I
= Industrial (40
C to +85
C)
E
= Extended (55
C to +125
C)
PACKAGE TYPE
D = 28-Pin Ceramic DIP (CDV028)
SPEED OPTION
See Product Selector Guide and Valid Combinations
B
Valid Combinations
AM27C64-45
DC, DCB, DI, DIB
AM27C64-55
AM27C64-70
DC, DCB, DI, DIB, DE, DEB
AM27C64-90
AM27C64-120
AM27C64-150
AM27C64-200
AM27C64-255
V
CC
= 5.0 V
5%
DC, DCB, DI, DIB
4
Am27C64
ORDERING INFORMATION
OTP EPROM Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
DEVICE NUMBER/DESCRIPTION
Am27C64
64 Kilobit (8 K x 8-Bit) CMOS OTP EPROM
AM27C64
-55
P
C
OPTIONAL PROCESSING
Blank = Standard Processing
TEMPERATURE RANGE
C = Commercial (0
C to +70
C)
I
= Industrial (40
C to +85
C)
E
= Extended (55
C to +125
C)
PACKAGE TYPE
P
= 28-Pin Plastic DIP (PD 028)
J
= 32-Pin Plastic Leaded Chip Carrier (PL 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
Valid Combinations
AM27C64-55
JC, PC, JI, PI
AM27C64-70
AM27C64-90
AM27C64-120
AM27C64-150
AM27C64-200
AM27C64-255
Am27C64
5
FUNCTIONAL DESCRIPTION
Device Erasure
In order to clear all locations of their programmed con-
tents, the device must be exposed to an ultraviolet light
source. A dosage of 15 W seconds/cm
2
is required to
completely erase the device. This dosage can be ob-
tained by exposure to an ultraviolet lamp--wavelength
of 2537 --with intensity of 12,000 W/cm
2
for 15 to 20
minutes. The device should be directly under and about
one inch from the source, and all filters should be re-
moved from the UV light source prior to erasure.
Note that all UV erasable devices will erase with light
sources having wavelengths shorter than 4000 , such
as fluorescent light and sunlight. Although the erasure
process happens over a much longer time period, ex-
posure to any light source should be prevented for
maximum system reliability. Simply cover the package
window with an opaque label or substance.
Device Programming
Upon delivery, or after each erasure, the device has all
of its bits in the "ONE", or HIGH state. "ZEROs" are
loaded into the device through the programming pro-
cedure.
The device enters the programming mode when 12.75
V
0.25 V is applied to the V
PP
pin, and CE# and
PGM# are at V
IL
.
For programming, the data to be programmed is ap-
plied 8 bits in parallel to the data pins.
The flowchar t in the Programming section of the
EPROM Products Data Book (Section 5, Figure 5-1)
shows AMD's Flashrite algorithm. The Flashrite algo-
rithm reduces programming time by using a 100 s pro-
gramming pulse and by giving each address only as
many pulses to reliably program the data. After each
pulse is applied to a given address, the data in that ad-
dress is verified. If the data does not verify, additional
pulses are given until it verifies or the maximum pulses
allowed is reached. This process is repeated while se-
quencing through each address of the device. This part
of the algorithm is done at V
CC
= 6.25 V to assure that
each EPROM bit is programmed to a sufficiently high
threshold voltage. After the final address is completed,
the entire EPROM memory is verified at V
CC
= V
PP
=
5.25 V.
Please refer to Section 5 of the EPROM Products Data
Book for additional programming information and spec-
ifications.
Program Inhibit
Programming different data to multiple devices in par-
allel is easily accomplished. Except for CE#, all like in-
puts of the devices may be common. A TTL low-level
program pulse applied to one device's CE# input with
V
PP
= 12.75 V
0.25 V and PGM# LOW will program
that particular device. A high-level CE# input inhibits
the other devices from being programmed.
Program Verify
A verification should be performed on the programmed
bits to determine that they were correctly programmed.
The verify should be performed with OE# and CE#, at
V
IL
, PGM# at V
IH
, and V
PP
between 12.5 V and 13.0 V.
Autoselect Mode
The autoselect mode provides manufacturer and de-
vice identification through identifier codes on DQ0
DQ7. This mode is primarily intended for programming
equipment to automatically match a device to be pro-
grammed with its corresponding programming algo-
rithm. This mode is functional in the 25
C
5
C
ambient temperature range that is required when pro-
gramming the device.
To activate this mode, the programming equipment
must force V
H
on address line A9. Two identifier bytes
may then be sequenced from the device outputs by tog-
gling address line A0 from V
IL
to V
IH
(that is, changing
the address from 00h to 01h). All other address lines
must be held at V
IL
during the autoselect mode.
Byte 0 (A0 = V
IL
) represents the manufacturer code,
and Byte 1 (A0 = V
IH
), the device identifier code. Both
codes have odd parity, with DQ7 as the parity bit.
Read Mode
To obtain data at the device outputs, Chip Enable (CE#)
and Output Enable (OE#) must be driven low. CE# con-
trols the power to the device and is typically used to se-
lect the device. OE# enables the device to output data,
independent of device selection. Addresses must be
stable for at least t
ACC
t
OE
.
Refer to the Switching
Waveforms section for the timing diagram.
Standby Mode
The device enters the CMOS standby mode when CE#
is at V
CC
0.3 V. Maximum V
CC
current is reduced to
100 A. The device enters the TTL-standby mode
when CE# is at V
IH
. Maximum V
CC
current is reduced
to 1.0 mA. When in either standby mode, the device
places its outputs in a high-impedance state, indepen-
dent of the OE# input.
Output OR-Tieing
To accommodate multiple memory connections, a
two-line control function provides:
s
Low memory power dissipation, and
s
Assurance that output bus contention will not occur.
CE# should be decoded and used as the primary de-
vice-selecting function, while OE# be made a common
6
Am27C64
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 F ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
V
CC
and V
SS
to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 F bulk electrolytic capacitor should be used
between V
CC
and V
SS
for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Notes:
1. V
H
= 12.0 V
0.5 V.
2. X = Either V
IH
or V
IL
.
3. A1A8 and A1012 = V
IL
.
4. See DC Programming Characteristics for V
PP
voltage during programming.
Mode
CE#
OE#
PGM#
A0
A9
V
PP
Outputs
Read
V
IL
V
IL
X
X
X
X
D
OUT
Output Disable
X
V
IH
X
X
X
X
High Z
Standby (TTL)
V
IH
X
X
X
X
X
High Z
Standby (CMOS)
V
CC
0.3 V
X
X
X
X
X
High Z
Program
V
IL
X
V
IL
X
X
V
PP
D
IN
Program Verify
V
IL
V
IL
V
IH
X
X
V
PP
D
OUT
Program Inhibit
V
IH
X
X
X
X
V
PP
High Z
Autoselect
(Note 3)
Manufacturer Code
V
IL
V
IL
X
V
IL
V
H
X
01h
Device Code
V
IL
V
IL
X
V
IH
V
H
X
15h
Am27C64
7
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
OTP Products. . . . . . . . . . . . . . . . . . 65
C to +125
C
All Other Products . . . . . . . . . . . . . . 65
C to +150
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . 55
C to +125
C
Voltage with Respect to V
SS
All pins except A9, V
PP
, V
CC
. . 0.6 V to V
CC
+ 0.6 V
A9 and V
PP
(Note 2) . . . . . . . . . . . . . 0.6 V to 13.5 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . . . 0.6 V to 7.0 V
Notes:
1. Minimum DC voltage on input or I/O pins 0.5 V. During
voltage transitions, the input may overshoot V
SS
to 2.0 V
for periods of up to 20 ns. Maximum DC voltage on input
and I/O pins is V
CC
+ 5 V. During voltage transitions, input
and I/O pins may overshoot to V
CC
+ 2.0 V for periods up
to 20ns.
2. Minimum DC input voltage on A9 is 0.5 V. During voltage
transitions, A9 and V
PP
may overshoot V
SS
to 2.0 V for
periods of up to 20 ns. A9 and V
PP
must not exceed+13.5
V at any time.
Stresses above those listed under "Absolute Maximum Rat-
ings" may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure of
the device to absolute maximum ratings for extended periods
may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . .0
C to +70
C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . .40
C to +85
C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . .55
C to +125
C
Supply Read Voltages
V
CC
for 5% devices . . . . . . . . . . +4.75 V to +5.25 V
V
CC
for 10% devices . . . . . . . . . +4.50 V to +5.50 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
8
Am27C64
DC CHARACTERISTICS over operating range (unless otherwise specified)
Caution: The device must not be removed from (or inserted into) a socket when V
CC
or V
PP
is applied.
Notes:
1. V
CC
must be applied simultaneously or before V
PP
, and removed simultaneously or after V
PP
..
2. I
CC1
is tested with OE# = V
IH
to simulate open outputs.
3. Minimum DC Input Voltage is 0.5 V. During transitions, the inputs may overshoot to 2.0 V for periods less than 20 ns.
Maximum DC Voltage on output pins is V
CC
+ 0.5 V, which may overshoot to V
CC
+ 2.0 V for periods less than 20 ns.
Figure 1.
Typical Supply Current vs. Frequency
V
CC
= 5.5 V, T = 25
C
Figure 2.
Typical Supply Current vs. Temperature
V
CC
= 5.5 V, f = 10 MHz
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
Unit
V
OH
Output HIGH Voltage
I
OH
= 400 A
2.4
V
V
OL
Output LOW Voltage
I
OL
= 2.1 mA
0.45
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
0.5
+0.8
V
I
LI
Input Load Current
V
IN
= 0 V to V
CC
1.0
A
I
LO
Output Leakage Current
V
OUT
= 0 V to V
CC
C/I Devices
1.0
A
E Devices
5.0
I
CC1
V
CC
Active Current (Note 2)
CE# = V
IL
, f = 10 MHz,
I
OUT
= 0 mA
25
mA
I
CC2
V
CC
TTL Standby Current
CE# = V
IH
1.0
mA
I
CC3
V
CC
CMOS Standby Current
CE# = V
CC
0.3 V
100
A
I
PP1
V
PP
Supply Current (Read)
CE# = OE# = V
IL
, V
PP
= V
CC
100
A
11419E-5
1
2
3
4
5
6
7
8
9
10
30
25
20
15
10
Frequency in MHz
Su
ppl
y C
urre
nt
in
mA
11419E-6
75 50 55
0
25
50
75 100 125 150
30
25
20
15
10
Temperature in
C
Su
pply
Cu
rre
nt
in
mA
Am27C64
9
TEST CONDITIONS
Table 1.
Test Specifications
SWITCHING TEST WAVEFORM
KEY TO SWITCHING WAVEFORMS
2.7 k
CL
6.2 k
5.0 V
Device
Under
Test
11419E-7
Figure 3.
Test Setup
Note:
Diodes are IN3064 or equivalents.
Test Condition
-45, -55,
-70
All
others
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
20
ns
Input Pulse Levels
0.03.0
0.452.4
V
Input timing measurement
reference levels
1.5 0.8,
2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
2.4 V
0.45 V
Input
Output
Test Points
2.0 V
2.0 V
0.8 V
0.8 V
11419E-8
3 V
0 V
Input
Output
1.5 V
1.5 V
Test Points
Note: For C
L
= 100 pF.
Note: For C
L
= 30 pF.
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don't Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
10
Am27C64
AC CHARACTERISTICS
Caution: Do not remove the device from (or insert it into) a socket or board that has V
PP
or V
CC
applied.
Notes:
1. V
CC
must be applied simultaneously or before V
PP
, and removed simultaneously or after V
PP
.
2. This parameter is sampled and not 100% tested.
3. Switching characteristics are over operating range, unless otherwise specified.
4. See Figure 3 and Table 1 for test specifications.
SWITCHING WAVEFORMS
Notes:
1. OE# may be delayed up to t
ACC
t
OE
after the falling edge of the addresses without impact on t
ACC
.
2. t
DF
is specified from OE# or CE#, whichever occurs first.
PACKAGE CAPACITANCE
Notes:
1. This parameter is only sampled and not 100% tested.
2. T
A
= +25
C, f = 1 MHz.
Parameter Symbols
Description
Test Setup
Am27C64
Unit
JEDEC
Standard
-45
-55
-70
-90
-120 -150 -200 -255
t
AVQV
t
ACC
Address to Output Delay
CE#,
OE# = V
IL
Max
45
55
70
90
120
150
200
250
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
45
55
70
90
120
150
200
250
ns
t
GLQV
t
OE
Output Enable to Output
Delay
CE# = V
IL
Max
30
35
40
40
50
50
50
50
ns
t
EHQZ
t
GHQZ
t
DF
(Note 2)
Chip Enable High or Output
Enable High to Output High Z,
Whichever Occurs First
Max
25
25
25
25
30
30
30
30
ns
t
AXQX
t
OH
Output Hold Time from
Addresses, CE# or OE#,
Whichever Occurs First
Min
0
0
0
0
0
0
0
0
ns
Addresses
CE#
OE#
Output
11419E-9
Addresses Valid
High Z
High Z
t
CE
Valid Output
2.4
0.45
2.0
0.8
2.0
0.8
t
ACC
(Note 1)
t
OE
t
DF
(Note 2)
t
OH
Parameter
Symbol
Parameter
Description
Test Conditions
CDV028
PL 032
PD 028
Unit
Typ
Max
Typ
Max
Typ
Max
C
IN
Input Capacitance
V
IN
= 0
8
10
6
10
5
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
11
14
8
12
8
10
pF
Am27C64
11
PHYSICAL DIMENSIONS*
CDV028--28-Pin Ceramic Dual In-Line Package, UV Lens (measured in inches)
* For reference only. BSC is an ANSI standard for Basic Space Centering.
PD 028--28-Pin Plastic Dual In-Line Package (measured in inches)
TOP VIEW
SIDE VIEW
END VIEW
INDEX AND
TERMINAL NO. 1
I.D. AREA
.565
.605
1.435
1.490
.005 MIN
.045
.065
.014
.026
.100 BSC
.015
.060
.160
.220
.125
.200
BASE PLANE
SEATING PLANE
.300 BSC
.600
BSC
.008
.018
94
105
.700
MAX
16-000038H-3
CDV028
DF10
3-30-95 ae
DATUM D
CENTER PLANE
DATUM D
CENTER PLANE
1
UV Lens
Pin 1 I.D.
1.440
1.480
.530
.580
.005 MIN
.045
.065
.090
.110
.140
.225
.120
.160
.014
.022
SEATING PLANE
.015
.060
.630
.700
0
10
.600
.625
16-038-SB-AG
PD 028
DG75
7-13-95 ae
28
15
14
.008
.015
12
Am27C64
PHYSICAL DIMENSIONS
PL 032--32-Pin Plastic Leaded Chip Carrier (measured in inches)
REVISION SUMMARY FOR AM27C64
Revision E
Global
Changed formatting to match current data sheets.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
Flashrite is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
.050 REF.
.026
.032
TOP VIEW
Pin 1 I.D.
.485
.495
.447
.453
.585
.595
.547
.553
16-038FPO-5
PL 032
DA79
6-28-94 ae
SIDE VIEW
SEATING
PLANE
.125
.140
.009
.015
.080
.095
.042
.056
.013
.021
.400
REF.
.490
.530
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