American Microsystems, Inc. reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
2.27.02
FS6130
FS6130
FS6130
FS6130
VCXO Clock Generator IC
VCXO Clock Generator IC
VCXO Clock Generator IC
VCXO Clock Generator IC
ISO9001
ISO9001
ISO9001
ISO9001
1.0 Features
On-chip tunable voltage-controlled crystal oscillator
circuitry (VCXO) allows precise system frequency
tuning (pull range typically 300ppm)
Uses inexpensive fundamental-mode crystals
Integrated phase-locked loop (PLL) multiplies VCXO
frequency to the higher system frequencies needed
3.3V or 5V supply voltage available
Small circuit board footprint: (8-pin 0.150
SOIC)
Custom frequency selections available - contact your
local AMI Sales Representative for more information
Figure 1: Pin Configuration
1
8
2
3
4
7
6
5
XIN
VDD
XTUNE
VSS
CLKC
CLKB
CLKA
XOUT
FS6
130
8-pin (0.150
) SOIC
2.0 Description
The FS6130 is a monolithic CMOS clock generator IC
designed to minimize cost and component count in digital
video/audio systems.
A high-resolution phase-locked loop generates three out-
put clocks through an array of post-dividers. All frequen-
cies are ratiometrically derived from the crystal oscillator
frequency. The locking of all the output frequencies to-
gether can eliminate unpredictable artifacts in video sys-
tems and reduce electromagnetic interference (EMI) due
to frequency harmonic stacking.
Table 1: Font Information
DEVICE
VDD
F
XIN
(MHz)
CLKA
(MHz)
CLKB
(MHz)
CLKC
(MHz)
FS6130-03
5V
13.500
54.000
13.500
27.000
NOTE: Contact AMI for custom versions
Figure 2: Block Diagram
VCXO
FS6130
CLKB
PLL
XOUT
XIN
CLKC
CLKA
XTUNE
Dividers
2
2.27.02
FS6130
FS6130
FS6130
FS6130
VCXO
VCXO
VCXO
VCXO Clock Generator IC
Clock Generator IC
Clock Generator IC
Clock Generator IC
ISO9001
ISO9001
ISO9001
ISO9001
Table 2: Pin Descriptions
Key: AI = Analog Input; AO = Analog Output; DI = Digital Input; DI
U
= Input with Internal Pull-Up; DI
D
= Input with Internal Pull-Down; DIO = Digital Input/Output; DI-3 = Three-Level Digital Input,
DO = Digital Output; P = Power/Ground; # = Active Low pin
PIN
TYPE
NAME
DESCRIPTION
1
AI
XIN
VCXO Crystal Feedback
2
P
VDD
Power Supply (+3.3V or +5V) see Version Information
3
AI
XTUNE
VCXO Tune
4
P
VSS
Ground
5
DO
CLKA
Clock Output
6
DO
CLKB
Clock Output
7
DO
CLKC
Clock Output
8
AO
XOUT
VCXO Crystal Drive
3.0 Functional Block Description
3.1
Phase-Locked Loop (PLL)
The on-chip PLL is a standard frequency- and phase-
locked loop architecture. The PLL multiplies the reference
oscillator to the desired frequency by a ratio of integers.
The frequency multiplication is exact with a zero synthe-
sis error.
3.2 Voltage-Controlled
Crystal
Oscillator (VCXO)
The VCXO provides a tunable, low-jitter frequency refer-
ence for the rest of the FS6109 system components.
Loading capacitance for the crystal is internal to the
FS6109. No external components (other than the crystal
resonator itself) are required for operation of the VCXO.
Continuous fine-tuning of the VCXO frequency is accom-
plished by varying the voltage on the XTUNE pin. The
total change (from one extreme to the other) in effective
loading capacitance is t.b.d. nominal.
The oscillator operates the crystal resonator in the paral-
lel-resonant mode. Crystal warping, or the "pulling" of the
crystal oscillation frequency, is accomplished by altering
the effective load capacitance presented to the crystal by
the oscillator circuit. The actual amount that changing the
load capacitance alters the oscillator frequency will be
dependent on the characteristics of the crystal as well as
the oscillator circuit itself.
Specifically, the motional capacitance of the crystal (usu-
ally referred to by crystal manufacturers as C
1
), the static
capacitance of the crystal (C
0
), and the load capacitance
(C
L
) of the oscillator determine the "warping" or "pulling"
capability of the crystal in the oscillator circuit.
A simple formula to obtain the warping capability of a
crystal oscillator is:
(
)
(
) (
)
C
C
C
C
C
C
C
ppm
f
L
L
L
L
1
0
2
0
6
1
2
1
2
10
)
(
+
+
-
=
where C
L1
and C
L2
are the two extremes of the applied
load capacitance.
EXAMPLE: A crystal with the following parameters is
used. With C
1
= 0.02pF, C
0
= 5pF, C
L1
= 10pF, and C
L2
=
22.66pF, the tuning range is
(
)
(
) (
)
ppm
.
.
.
f
305
10
5
66
22
5
2
106
10
66
22
02
0
=
+
+
-
=
.
3
2.27.02
FS6130
FS6130
FS6130
FS6130
VCXO Clock Generator IC
VCXO Clock Generator IC
VCXO Clock Generator IC
VCXO Clock Generator IC
ISO9001
ISO9001
ISO9001
ISO9001
4.0 Electrical
Specifications
Table 3: Absolute Maximum Ratings
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the device at
these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance,
functionality, and reliability.
PARAMETER
SYMBOL
MIN.
MAX.
UNITS
Supply Voltage (V
SS
= ground)
V
DD
V
SS
-0.5
7
V
Input Voltage, dc
V
I
V
SS
-0.5
V
DD
+0.5
V
Output Voltage, dc
V
O
V
SS
-0.5
V
DD
+0.5
V
Input Clamp Current, dc (V
I
< 0 or V
I
> V
DD
)
I
IK
-50
50
mA
Output Clamp Current, dc (V
I
< 0 or V
I
> V
DD
)
I
OK
-50
50
mA
Storage Temperature Range (non-condensing)
T
S
-65
150
C
Ambient Temperature Range, Under Bias
T
A
-55
125
C
Junction Temperature
T
J
125
C
Lead Temperature (soldering, 10s)
260
C
Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7)
2
kV
CAUTION: ELECTROSTATIC SENSITIVE DEVICE
Permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy elec-
trostatic discharge.
Table 4: Operating Conditions
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Supply Voltage (3.3 volt system)
V
DD
SEE NOTE 1
3.0
3.3
3.6
V
Supply Voltage (5.0 volt system)
V
DD
SEE NOTE 1
4.5
5.0
5.5
V
Ambient Operating Temperature Range
T
A
SEE NOTE 1
0
70
C
Crystal Resonator Frequency
f
XTAL
Fundamental Mode
5
18
MHz
NOTE 1: These specifications represent generic FS6130 device capability. Device specifications for a particular version (i.e. FS6130-xx) are guaranteed only with the operating voltage and refer-
ence frequency specified in Version Information.
4
2.27.02
FS6130
FS6130
FS6130
FS6130
VCXO
VCXO
VCXO
VCXO Clock Generator IC
Clock Generator IC
Clock Generator IC
Clock Generator IC
ISO9001
ISO9001
ISO9001
ISO9001
Table 5: DC Electrical Specifications (V
DD
= 3.3V nominal)
Unless otherwise stated, V
DD
= 3.3V 10%, no load on any output, and ambient temperature range T
A
= 0C to 70C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are
3
from typical. Negative currents indicate current flows out of the device.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Overall
Supply Current, Dynamic, with Loaded
Outputs
I
DD
f
XTAL
= 27MHz; C
L
= 10pF, V
DD
= 3.3V
mA
Crystal Oscillator
Crystal Loading Capacitance
C
L(xtal)
As seen by a crystal connected to XIN and
XOUT
20
pF
Crystal Drive Level
R
XTAL
=20
;
200
uW
Crystal Oscillator Feedback (XIN)
Threshold Bias Voltage
V
TH
860
mV
High-Level Input Current
I
IH
34
A
Low-Level Input Current
I
IL
-21
A
Crystal Oscillator Drive (XOUT)
High-Level Output Source Current
I
OH
V(XIN) = 3.3V, V
O
= 0V
-0.5
mA
Low-Level Output Sink Current
I
OL
V(XIN) = 0V, V
O
= 3.3V
15
mA
Clock Outputs (CLKx)
High-Level Output Source Current *
I
OH
V
O
= 2.0V
-40
mA
Low-Level Output Sink Current *
I
OL
V
O
= 0.4V
17
mA
z
OH
V
O
= 0.1V
DD
; output driving high
25
Output Impedance *
z
OL
V
O
= 0.1V
DD
; output driving low
25
Short Circuit Source Current *
I
OSH
V
O
= 0V; shorted for 30s, max.
-55
mA
Short Circuit Sink Current *
I
OSL
V
O
= 3.3V; shorted for 30s, max.
55
mA
5
2.27.02
FS6130
FS6130
FS6130
FS6130
VCXO Clock Generator IC
VCXO Clock Generator IC
VCXO Clock Generator IC
VCXO Clock Generator IC
ISO9001
ISO9001
ISO9001
ISO9001
Table 6: DC Electrical Specifications (V
DD
= 5V nominal)
Unless otherwise stated, V
DD
= 5.0V 10%, no load on any output, and ambient temperature range T
A
= 0C to 70C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are
3
from typical. Negative currents indicate current flows out of the device.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Overall
Supply Current, Dynamic, with Loaded
Outputs
I
DD
f
XTAL
= 27MHz; C
L
= 10pF, V
DD
= 5.0V
mA
Crystal Oscillator
Crystal Loading Capacitance
C
L(xtal)
As seen by a crystal connected to XIN and
XOUT
17
pF
Crystal Drive Level
R
XTAL
=20
;
200
uW
Crystal Oscillator Feedback (XIN)
Threshold Bias Voltage
V
TH
mV
High-Level Input Current
I
IH
A
Low-Level Input Current
I
IL
A
Crystal Oscillator Drive (XOUT)
High-Level Output Source Current
I
OH
V(XIN) = 5V, V
O
= 0V
mA
Low-Level Output Sink Current
I
OL
V(XIN) = 0V, V
O
= 5V
mA
Clock Outputs (CLKx)
High-Level Output Source Current *
I
OH
V
O
= 2.0V
mA
Low-Level Output Sink Current *
I
OL
V
O
= 0.4V
mA
z
OH
V
O
= 0.1V
DD
; output driving high
Output Impedance *
z
OL
V
O
= 0.1V
DD
; output driving low
Short Circuit Source Current *
I
OSH
V
O
= 0V; shorted for 30s, max.
mA
Short Circuit Sink Current *
I
OSL
V
O
= 5V; shorted for 30s, max.
mA
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