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A43E06161
Preliminary
512K X 16 Bit X 2 Banks Synchronous DRAM
PRELIMINARY (July, 2005, Version 0.1)
AMIC Technology, Corp.
Document Title
512K X 16 Bit X 2 Banks Synchronous DRAM
Revision History
Rev. No. History Issue
Date Remark
0.0
Initial issue
May 3, 2005
Preliminary
0.1 Modify
t
SS
from 3ns to 2ns
July 31, 2005
Modify
t
SH
from 1.5ns to 1ns
Modify I
CC6
from 0.5mA to 200
A
A43E06161
Preliminary
512K X 16 Bit X 2 Banks Synchronous DRAM
PRELIMINARY (July, 2005, Version 0.1)
1
AMIC Technology, Corp.
Features
Low power supply
-
VDD:
1.8V
-
VDDQ:
1.8V
LVCMOS compatible with multiplexed address
Dual banks / Pulse
RAS
MRS cycle with address key programs
- CAS Latency (2,3)
- Burst Length (1,2,4,8 & full page)
-
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Deep Power Down Mode
Clock Frequency: 105MHz @ CL=3 (-95)
133MHz @ CL=3 (-75)
Industrial operating temperature range: -40C to +85C
for U
Pb-Free type for -F
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
32ms refresh period (2K cycle)
Available in 50-pin TSOP(II) package
General Description
The A43E06161 is 16,777,216 bits synchronous high data
rate Dynamic RAM organized as 2 X 524,288 words by 16
bits, fabricated with AMIC's high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock. I/O transactions are possible on
every clock cycle. Range of operating frequencies,
programmable latencies allows the same device to be useful
for a variety of high bandwidth, high performance memory
system applications.
Pin Configuration
TSOP (II)
A43E06161V
50 49 48 47 46 45 44 43 42 41
39
40
38 37 36 35 34 33 32 31 30 29 28 27 26
1
2
3
4 5
6
7
8
9 10
12
11
13 14 15 16 17 18 19 20 21 22 23 24 25
VS
S
DQ
15
DQ
14
VS
SQ
DQ
13
DQ
12
V
DDQ
DQ
11
DQ
10
V
SSQ
DQ
9
DQ
8
VD
DQ
NC
/RFU
UD
Q
M
CLK
CK
E
NC
A9
A8
A7
A6
A5
A4
VS
S
VD
D
DQ
0
DQ
1
VSS
Q
DQ
2
DQ
3
VDD
Q
DQ
4
DQ
5
VSS
Q
DQ
6
DQ
7
VDD
Q
LD
Q
M
WE
CA
S
RA
S
CS
BA
A1
0/
A
P
A0
A1
A2
A3
VD
D
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Block Diagram
Bank Select
Ro
w Bu
f
f
e
r
Ref
r
e
s
h C
o
unt
e
r
Add
r
e
s
s R
e
gi
st
er
Row D
e
co
de
r
Co
lu
mn
B
u
ff
er
LCBR
LR
A
S
CLK
ADD
Timing Register
Data Input Register
512K X 16
512K X 16
Se
n
s
e A
M
P
Column Decoder
Latency & Burst Length
Programming Register
LRAS
LCAS
LRAS
LCBR
LWE
LWCBR
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
I/
O
Con
t
r
o
l
O
u
t
p
u
t
B
u
ffe
r
LWE
LDQM
DQi
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Pin Descriptions
Symbol Name
Description
CLK
System Clock
Active on the positive going edge to sample all inputs.
CS
Chip Select
Disables or Enables device operation by masking or enabling all inputs except CLK,
CKE and L(U)DQM
CKE Clock
Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one clock + tss prior to new command.
Disable input buffers for power down in standby.
A0~A10/AP Address
Row / Column addresses are multiplexed on the same pins.
Row address : RA0~RA10, Column address: CA0~CA7
BA
Bank Select Address
Selects bank to be activated during row address latch time.
Selects band for read/write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column Address
Strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write Enable
Enables write operation and Row precharge.
L(U)DQM
Data Input/Output
Mask
Makes data output Hi-Z, t SHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
DQ
0-15
Data Input/Output
Data inputs/outputs are multiplexed on the same pins.
VDD/VSS
Power
Supply/Ground
Power Supply: +1.7V~1.95V/Ground
VDDQ/VSSQ
Data Output
Power/Ground
Provide isolated Power/Ground to DQs for improved noise immunity.
NC/RFU No
Connection
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Absolute Maximum Ratings*
Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +2.6V
Voltage on VDD supply relative to VSS (VDD, VDDQ )
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +2.6V
Storage Temperature (T
STG
) . . . . . . . . . . -55
C to +150
C
Soldering Temperature X Time (T
SLODER
) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
C X 10sec
Power Dissipation (P
D
) . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA
*Comments
Permanent device damage may occur if "Absolute Maximum
Ratings" are exceeded.
Functional operation should be restricted to recommended
operating condition.
Exposure to higher than recommended voltage for extended
periods of time could affect device reliability.
Capacitance (T
A
=25
C, f=1MHz)
Parameter Symbol
Condition
Min
Typ
Max
Unit
Input Capacitance
CI1
A0 to A10, BA
2.0
4.0
pF
CI2
CLK, CKE,
CS
,
RAS
,
CAS
,
WE
,
UDQM, LDQM
2.0 4.0 pF
Data Input/Output Capacitance
CI/O
DQ0 to DQ15
3.5
6.0
pF
DC Electrical Characteristics
Recommend operating conditions (Voltage referenced to VSS = 0V, T
A
= -25C to +70C or -40C to +85C)
Parameter Symbol
Min
Typ
Max
Unit
Note
Supply
Voltage
VDD 1.7 1.8
1.95 V
DQ Supply Voltage
VDDQ
1.7
1.8
1.95
V
Input High Voltage
V
IH
0.8 x VDDQ
-
VDD+0.3
V
Input Low Voltage
V
IL
-0.3 0 0.3 V Note
1
Output High Voltage
V
OH
VDDQ-0.2 -
-
V I
OH
= -0.1mA
Output Low Voltage
V
OL
- -
0.2
V
I
OL
= 0.1mA
Input Leakage Current
I
IL
-1 - 1
A
Note 2
Output Leakage Current
I
OL
-1.5 - 1.5
A
Note 3
Output Loading Condition
See Figure 1
Note:
1. V
IL
(min) = -1.5V AC (pulse width
5ns).
2. Any input 0V
VIN
VDD + 0.3V, all other pins are not under test = 0V
3. Dout is disabled, 0V
Vout
VDD
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Decoupling Capacitance Guide Line
Recommended decoupling capacitance added to power line at board.
Parameter Symbol
Value
Unit
Decoupling Capacitance between VDD and VSS
C
DC1
0.1 + 0.01
F
Decoupling Capacitance between VDDQ and VSSQ
C
DC2
0.1 + 0.01
F
Note:
1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
DC Electrical Characteristics
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
C or -40C to +85C)
Speed
Symbol Parameter
Test
Conditions
CAS
Latency
-75 -95
Unit
Notes
I
cc1
Operating Current
(One Bank Active)
Burst Length = 1
t
RC
t
RC
(min), t
CC
t
CC
(min
)
, I
OL
= 0mA
20 mA
1
I
cc2
P
CKE
V
IL
(max), t
CC
= 15ns
0.3
I
cc2
PS
Precharge Standby
Current in power-
down mode
CKL
VIL(max), t
CC
=
0.1
mA
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
5
I
CC2
NS
Precharge Standby
Current in non
power-down mode
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable.
2
mA
I
CC3
P
Active Standby
Current in power-
down mode
CKE
V
IL
(max), t
CC
= 15ns
2
mA
I
CC3
N
Active Standby
current in non
power-down mode
(One Bank Active)
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
10 mA
I
CC4
Operating Current
(Burst Mode)
I
OL
= 0mA, Page Burst
All bank Activated, t
CCD
= t
CCD
(min)
20 mA
1
I
CC5
Refresh
Current t
RC
t
RC
(min)
20 mA
2
I
CC6
Self Refresh
Current
CKE
0.2V
200
A
I
CC7
Deep Power Down
Current
CKE
0.2V
10
A
Note:
1. Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2. Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
AC Operating Test Conditions
(VDD = 1.8V
0.3V, T
A
= 0
C to +70
C or -40C to +85C)
Parameter Value
Unit
AC input levels
0.9 x VDDQ / 0.2
V
Input timing measurement reference level
0.5 x VDDQ
V
Input rise and all time (See note3)
tr / tf = 1 / 1
ns
Output timing measurement reference level
0.5 x VDDQ
V
Output load condition
See Fig.2
Output
10.6
13.9
(Fig. 1) DC Output Load Circuit
Z
O
=50
OUTPUT
50
V
TT
= 0.5V x VDDQ
30pF
(Fig. 2) AC Output Load Circuit
1.8V
30pF
V
OH
(DC) = VDDQ-0.2V, I
OH
= -0.1mA
V
OL
(DC) = 0.2V, I
OL
= 0.1mA
AC Characteristics
(AC operating conditions unless otherwise noted)
-75 -95
Symbol Parameter
Min Max Min Max
Unit Note
CL=3 7.5
9.5
t
CC
CLK cycle time
CL=2 12
1000
15
1000
ns
1
CL=3 - 6 - 7
t
SAC
CLK to valid
Output delay
CL=2 - 9 - 8
ns 1,2
t
OH
Output data hold time
2.5
-
2.5
-
ns
2
CL=3 3 - 3.5 -
t
CH
CLK high pulse width
CL=2 3 - 3.5 -
ns 3
CL=3 3 - 3.5 -
t
CL
CLK low pulse width
CL=2 3 - 3.5 -
ns 3
CL=3 2 - 2 -
t
SS
Input setup time
CL=2 2 - 2 -
ns 3
t
SH
Input hold time
1
-
1
-
ns
3
t
SLZ
CLK to output in Low-Z
1
-
1
-
ns
2
CL=3 - 6 - 7
t
SHZ
CLK to output in Hi-Z
CL=2 - 8 - 8
ns
CL=CAS Latency.
*All AC parameters are measured from half to half.
Note :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e.,
[
(tr + tf)/2-1
]
ns should be added to the parameter.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Operating AC Parameter
(AC operating conditions unless otherwise noted)
Version
Symbol
Parameter
-75 -95
Unit Note
t
RRD(min)
Row active to row active delay
2
2
CLK
1
t
RCD(min)
RAS to
CAS
delay
27 28.5
ns
1
t
RP(min)
Row precharge time
27
28.5
ns
1
t
RAS(min)
57
57
ns
1
t
RAS(max)
Row active time
100
s
t
RC(min)
Row cycle time
84
85.5
ns
1
t
CDL(min)
Last data in new col. Address delay
7.5
8.5
ns
2
t
RDL(min)
Last data in row precharge
2
2
CLK
1, 2
t
BDL(min)
Last data in to burst stop
7.5
9.5
ns
2
t
CCD(min)
Col. Address to col. Address delay
7.5
9.5
ns
Note:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Simplified Truth Table
Command CKEn-1 CKEn
CS
RAS
CAS
WE
DQM
BA A10/
AP
A9~A0
Notes
Register
Mode Register Set
H X L
L L L X OP
CODE
1,2
Auto Refresh
H
3
Entry
H
L
L L L H X
X
3
L H H H
3
Refresh
Self
Refresh
Exit L
H
H X X X
X X
3
Bank Active & Row Addr.
H
X
L
L
H
H
X
V
Row Addr.
4
Auto Precharge Disable
L
4
Read &
Column Addr. Auto Precharge Enable
H X L
H
L H X
V
H
Column
Addr.
4,5
Auto Precharge Disable
L
4
Write &
Column Addr. Auto Precharge Enable
H X L
H
L L X
V
H
Column
Addr.
4,5
Burst Stop
H
X
L
H
H
L
X
X
Bank Selection
V
L
Precharge
Both Banks
H X L
L
H L X
X H
X
L H H H
Entry
H L
H X X X
X
Clock Suspend or
Active Power Down
Exit L
H
X
X
X
X
X
X
L H H H
Entry H L
H X X X
X
L V V V
Precharge Power Down Mode
Exit L
H
H X X X
X
X
DQM H
X
V
X
6
L H H H
No Operation Command
H
X
H X X X
X X
7
Deep Power Down Entry
H
L
L
H
H
L
X
X
Deep Power Down Exit
L
H
X
X
X
X
X
X
7
(V = Valid, X = Don't Care, H = Logic High, L = Logic Low)
Note :
1. OP Code : Operand Code
A0~A10/AP,BA : Program keys. (@MRS)
2. MRS can be issued only at both banks precharge state.
A new command can be issued after 2 clock cycle of MRS.
3. Auto refresh functions as same as CBR refresh of DRAM.
The automatical precharge without Row precharge command is meant by "Auto".
Auto/Self refresh can be issued only at both precharge state.
4. BA : Bank select address.
If "Low" at read, write, Row active and precharge, bank A is selected.
If "High" at read, write, Row active and precharge, bank B is selected.
If A10/AP is "High" at Row precharge, BA is ignored and both banks are selected.
5. During burst read or write with auto precharge, new read write command cannot be issued.
Another bank read write command can be issued at every burst length.
6. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0),
but makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2)
7. After Deep Power Down mode exit, a full new initialization of the memory device is mandatory.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Mode Register Filed Table to Program Modes
Register Programmed with MRS
Address
BA
A10/AP
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function
RFU
RFU
W.B.L
TM
CAS Latency
BT
Burst Length
(Note 1)
(Note 2)
Test Mode
CAS Latency
Burst Type
Burst Length
A8 A7
Type
A6 A5 A4 Latency A3
Type A2 A1 A0 BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
Reserved
0 1
0 0 1
-
1
Interleave
0
0
1
2
Reserved
1 0
0 1 0
2
0
1
0
4
4
1 1
Vendor
Use
Only
0 1 1
3
0
1
1
8
8
Write Burst Length
1 0 0 Reserved
1
0
0 Reserved Reserved
A9 Length 1 0 1 Reserved
1
0
1 Reserved Reserved
0 Burst 1
1
0
Reserved
1
1
0
Reserved
Reserved
1 Single
Bit 1
1
1
Reserved
1
1
1 256(Full) Reserved
(Note 3)
Power Up Sequence
1. Apply power and start clock, Attempt to maintain CKE = "H", DQM = "H" and the other pins are NOP condition at inputs.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200
s.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 may be changed.
The device is now ready for normal operation.
Note :
1. RFU(Reserved for Future Use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. The full column burst (256bit) is available only at Sequential mode of burst type.
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AMIC Technology, Corp.
Burst Sequence (Burst Length = 4)
Initial address
A1 A0
Sequential Interleave
0 0 0 1 2 3 0 1 2 3
0 1 1 2 3 0 1 0 3 2
1 0 2 3 0 1 2 3 0 1
1 1 3 0 1 2 3 2 1 0
Burst Sequence (Burst Length = 8)
Initial address
A2 A1 A0
Sequential Interleave
0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
0 0 1 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6
0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5
0 1 1 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4
1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3
1 0 1 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2
1 1 0 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1
1 1 1 7 0 1 2 3 4 5 6 7 6 5 4 3 2 1 0
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AMIC Technology, Corp.
Device Operations
Clock (CLK)
The clock input is used as the reference for all SDRAM
operations. All operations are synchronized to the positive
going edge of the clock. The clock transitions must be
monotonic between VIL and VIH. During operation with CKE
high all inputs are assumed to be in valid state (low or high)
for the duration of set up and hold time around positive edge
of the clock for proper functionality and ICC specifications.
Clock Enable (CLK)
The clock enable (CKE) gates the clock onto SDRAM. If CKE
goes low synchronously with clock (set-up and hold time
same as other inputs), the internal clock is suspended form
the next clock cycle and the state of output and burst address
is frozen as long as the CKE remains low. All other inputs are
ignored from the next clock cycle after CKE goes low. When
both banks are in the idle state and CKE goes low
synchronously with clock, the SDRAM enters the power down
mode form the next clock cycle. The SDRAM remains in the
power down mode ignoring the other inputs as long as CKE
remains low. The power down exit is synchronous as the
internal clock is suspended. When CKE goes high at least
"t
SS
+ 1
CLOCK
" before the high going edge of the clock, then
the SDRAM becomes active from the same clock edge
accepting all the input commands.
Bank Select (BA)
This SDRAM is organized as two independent banks of
524,288 words X 16 bits memory arrays. The BA inputs is
latched at the time of assertion of RAS and
CAS
to select
the bank to be used for the operation. When BA is asserted
low, bank A is selected. When BA is asserted high, bank B is
selected. The bank select BA is latched at bank activate,
read, write mode register set and precharge operations.
Address Input (A0 ~ A10/AP)
The 19 address bits required to decode the 524,288 word
locations are multiplexed into 11 address input pins
(A0~A10/AP). The 11 bit row address is latched along with
RAS and BA during bank activate command. The 8 bit
column address is latched along with
CAS
,
WE
and BA
during read or write command.
NOP and Device Deselect
When RAS ,
CAS
and
WE
are high, the SDRAM performs
no operation (NOP). NOP does not initiate any new
operation, but is needed to complete operations which
require more than single clock like bank activate, burst read,
auto refresh, etc. The device deselect is also a NOP and is
entered by asserting CS high. CS high disables the
command decoder so that RAS ,
CAS
and
WE
, and all the
address inputs are ignored.
Power-Up
The following sequence is recommended for POWER UP
1. Power must be applied to either CKE and DQM inputs to
pull them high and other pins are NOP condition at the
inputs before or along with VDD (and VDDQ) supply.
The clock signal must also be asserted at the same time.
2. After VDD reaches the desired voltage, a minimum pause
of 200 microseconds is required with inputs in NOP
condition.
3. Both banks must be precharged now.
4. Perform a minimum of 2 Auto refresh cycles to stabilize the
internal circuitry.
5. Perform a MODE REGISTER SET cycle to program the
CAS latency, burst length and burst type as the default
value of mode register is undefined.
At the end of one clock cycle from the mode register set
cycle, the device is ready for operation.
When the above sequence is used for Power-up, all the
out-puts will be in high impedance state. The high
impedance of outputs is not guaranteed in any other
power-up sequence.
cf.) Sequence of 4 & 5 may be changed.
Mode Register Set (MRS)
The mode register stores the data for controlling the various
operation modes of SDRAM. It programs the CAS latency,
addressing mode, burst length, test mode and various vendor
specific options to make SDRAM useful for variety of different
applications. The default value of the mode register is not
defined, therefore the mode register must be written after
power up to operate the SDRAM. The mode register is
written by asserting low on CS , RAS ,
CAS
,
WE
(The
SDRAM should be in active mode with CKE already high
prior to writing the mode register). The state of address pins
A0~A10/AP and BA in the same cycle as
CS , RAS ,
CAS
,
WE
going low is the data written in the
mode register. One clock cycle is required to complete the
write in the mode register. The mode register contents can
be changed using the same command and clock cycle
requirements during operation as long as both banks are in
the idle state. The mode register is divided into various fields
depending on functionality. The burst length field uses
A0~A2, burst type uses A3, addressing mode uses A4~A6,
A7~A8, A10/AP and BA are used for vendor specific options
or test mode. And the write burst length is programmed using
A9. A7~A8, A10/AP and BA must be set to low for normal
SDRAM operation.
Refer to table for specific codes for various burst length,
addressing modes and CAS latencies.
Bank Activate
The bank activate command is used to select a random row
in an idle bank. By asserting low on RAS and
CS
with
desired row and bank addresses, a row access is initiated.
The read or write operation can occur after a time delay of
t
RCD
(min) from the time of bank activation. t
RCD
(min) is an
internal timing parameter of SDRAM, therefore it is
dependent on operating clock frequency. The minimum
number of clock cycles required between bank activate and
read or write command should be calculated by dividing
t
RCD
(min) with cycle time of the clock and then rounding off
the result to the next higher integer. The SDRAM has two
internal banks on the same chip and shares part of the
internal circuitry to reduce chip area, therefore it restricts the
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activation of both banks immediately. Also the noise
generated during sensing of each bank of SDRAM is high
requiring some time for power supplies recover before the
other bank can be sensed reliably. t
RRD
(min) specifies the
minimum time required between activating different banks.
The number of clock cycles required between different bank
activation must be calculated similar to t
RCD
specification. The
minimum time required for the bank to be active to initiate
sensing and restoring the complete row of dynamic cells is
determined by t
RAS
(min) specification before a precharge
command to that active bank can be asserted. The maximum
time any bank can be in the active state is determined by
t
RAS
(max). The number of cycles for both t
RAS
(min) and
t
RAS
(max) can be calculated similar to t
RCD
specification.
Burst Read
The burst read command is used to access burst of data on
consecutive clock cycles from an active row in an active
bank. The burst read command is issued by asserting low on
CS
and
CAS
with
WE
being high on the positive edge of
the clock. The bank must be active for at least t
RCD
(min)
before the burst read command is issued. The first output
appears CAS latency number of clock cycles after the issue
of burst read command. The burst length, burst sequence
and latency from the burst read command is determined by
the mode register which is already programmed. The burst
read can be initiated on any column address of the active
row. The address wraps around if the initial address does not
start from a boundary such that number of outputs from each
I/O are equal to the burst length programmed in the mode
register. The output goes into high-impedance at the end of
the burst, unless a new burst read was initiated to keep the
data output gapless. The burst read can be terminated by
issuing another burst read or burst write in the same bank or
the other active bank or a precharge command to the same
bank. The burst stop command is valid at every page burst
length.
Burst Write
The burst write command is similar to burst read command,
and is used to write data into the SDRAM consecutive clock
cycles in adjacent addresses depending on burst length and
burst sequence. By asserting low on
CS
,
CAS
and
WE
with
valid column address, a write burst is initiated. The data
inputs are provided for the initial address in the same clock
cycle as the burst write command. The input buffer is
deselected at the end of the burst length, even though the
internal writing may not have been completed yet. The writing
can not complete to burst length. The burst write can be
terminated by issuing a burst read and DQM for blocking
data inputs or burst write in the same or the other active
bank. The burst stop command is valid only at full page burst
length where the writing continues at the end of burst and the
burst is wrap around. The write burst can also be terminated
by using DQM for blocking data and precharging the bank
"t
RDL
" after the last data input to be written into the active row.
See DQM OPERATION also.
DQM Operation
The DQM is used to mask input and output operation. It
works similar to
OE
during read operation and inhibits writing
during write operation. The read latency is two cycles from
DQM and zero cycle for write, which means DQM masking
occurs two cycles later in the read cycle and occurs in the
same cycle during write cycle. DQM operation is
synchronous with the clock, therefore the masking occurs for
a complete cycle. The DQM signal is important during burst
interrupts of write with read or precharge in the SDRAM. Due
to asynchronous nature of the internal write, the DQM
operation is critical to avoid unwanted or incomplete writes
when the complete burst write is not required.
Precharge
The precharge operation is performed on an active bank by
asserting low on
CS
,
RAS
,
WE
and A10/AP with valid BA
of the bank to be precharged. The precharge command can
be asserted anytime after t
RAS
(min) is satisfied from the bank
activate command in the desired bank. "t
RP
" is defined as the
minimum time required to precharge a bank.
The minimum number of clock cycles required to complete
row precharge is calculated by dividing "t
RP
" with clock cycle
time and rounding up to the next higher integer. Care should
be taken to make sure that burst write is completed or DQM
is used to inhibit writing before precharge command is
asserted. The maximum time any bank can be active is
specified by t
RAS
(max). Therefore, each bank has to be
precharged within t
RAS
(max) from the bank activate
command. At the end of precharge, the bank enters the idle
state and is ready to be activated again.
Entry to Power Down, Auto refresh, Self refresh and Mode
register Set etc, is possible only when both banks are in idle
state.
Auto Precharge
The precharge operation can also be performed by using
auto precharge. The SDRAM internally generates the timing
to satisfy t
RAS
(min) and "t
RP
" for the programmed burst length
and CAS latency. The auto precharge command is issued at
the same time as burst read or burst write by asserting high
on A10/AP. If burst read or burst write command is issued
with low on A10/AP, the bank is left active until a new
command is asserted. Once auto precharge command is
given, no new commands are possible to that particular bank
until the bank achieves idle state.
Both Banks Precharge
Both banks can be precharged at the same time by using
Precharge all command. Asserting low on
CS
,
RAS
and
WE
with high on A10/AP after both banks have satisfied
t
RAS
(min) requirement, performs precharge on both banks. At
the end of tRP after performing precharge all, both banks are
in idle state.
Auto Refresh
The storage cells of SDRAM need to be refreshed every
32ms to maintain data. An auto refresh cycle accomplishes
refresh of a single row of storage cells. The internal counter
increments automatically on every auto refresh cycle to
refresh all the rows. An auto refresh command is issued by
asserting low on
CS
,
RAS
and
CAS
with high on CKE and
WE
. The auto refresh command can only be asserted with
both banks being in idle state and the device is not in power
down mode (CKE is high in the previous cycle). The time
required to complete the auto refresh operation is specified
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by "t
RC
(min)". The minimum number of clock cycles required
can be calculated by driving "t
RC
" with clock cycle time and
then rounding up to the next higher integer. The auto refresh
command must be followed by NOP's until the auto refresh
operation is completed. Both banks will be in the idle state at
the end of auto refresh operation. The auto refresh is the
preferred refresh mode when the SDRAM is being used for
normal data transactions. The auto refresh cycle can be
performed once in 15.6us or a burst of 2048 auto refresh
cycles once in 32ms.
Self Refresh
The self refresh is another refresh mode available in the
SDRAM. The self refresh is the preferred refresh mode for
data retention and low power operation of SDRAM. In self
refresh mode, the SDRAM disables the internal clock and all
the input buffers except CKE. The refresh addressing and
timing is internally generated to reduce power consumption.
The self refresh mode is entered from all banks idle state by
asserting low on
CS
,
RAS
,
CAS
and CKE with high on
WE . Once the self refresh mode is entered, only CKE state
being low matters, all the other inputs including clock are
ignored to remain in the self refresh.
The self refresh is exited by restarting the external clock and
then asserting high on CKE. This must be followed by NOP's
for a minimum time of "t
RC
" before the SDRAM reaches idle
state to begin normal operation. If the system uses burst auto
refresh during normal operation, it is recommended to used
burst 2048 auto refresh cycles immediately after exiting self
refresh.
Deep Power Down Mode
The Deep Power Down Mode is an unique function on Low
Power SDRAMs with very low standby currents. All internal
voltage generators inside the Low Power SDRAMs are
stopped and all memory data will be lost in this mode. To
enter the Deep Power Down Mode all banks must be
precharged and the necessary Precharged Delay t
RP
must
occur.
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Basic feature And Function Descriptions
1. CLOCK Suspend
1) Click Suspended During Write (BL=4)
Masked by CKE
Q0
Q1
Q3
Q0
Q2
Q3
Suspended Dout
2) Clock Suspended During Read (BL=4)
WR
Masked by CKE
D0
D1
D2
D3
D0
D1
D2
D3
Not Written
DQ(CL3)
DQ(CL2)
Internal
CLK
CKE
CMD
CLK
RD
Q2
Q1
Note: CLK to CLK disable/enable=1 clock
2. DQM Operation
1) Write Mask (BL=4)
Masked by CKE
Q0
Q1
Q3
Q1
Q2
Q3
DQM to Data-out Mask = 2
2) Read Mask (BL=4)
WR
Masked by CKE
D0
D1
D3
D0
D1
D3
DQM to Data-in Mask = 0CLK
DQ(CL3)
DQ(CL2)
DQM
CMD
CLK
RD
Hi-Z
Hi-Z
Q0
Q2
Q4
2) Read Mask (BL=4)
RD
Hi-Z
Hi-Z
Hi-Z
Q6
Q7
Q8
Hi-Z
Q1
Q3
Hi-Z
Hi-Z
Q5
Q6
Q7
CLK
CMD
CKE
DQM
DQ(CL2)
DQ(CL3)
* Note :
1. DQM makes data out Hi-Z after 2 clocks which should masked by CKE "L".
2. DQM masks both data-in and data-out.
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3. CAS Interrupt (I)
Note : 1. By "Interrupt", It is possible to stop burst read/write by external command before the end of burst.
By "
CAS
Interrupt", to stop burst read/write by
CAS
access; read, write and block write.
2. t
CCD
:
CAS
to
CAS
delay. (=1CLK)
3. t
CDL
: Last data in to new column address delay. (= 1CLK).
1) Read interrupted by Read (BL=4)
Note 1
RD
RD
A
B
QA0
QB0
QB1 QB2
QB3
QA0
QB0 QB1
QB2 QB3
CLK
CMD
ADD
DQ(CL2)
DQ(CL3)
t
CCD
Note2
2) Write interrupted by Write (BL =2)
WR
WR
A
B
CLK
CMD
ADD
t
CCD
Note2
DA0
DB0
DB1
t
CDL
Note3
DQ
3) Write interrupted by Read (BL =2)
WR
RD
A
B
t
CCD
Note2
DA0
QB0
QB1
t
CDL
Note3
DQ(CL2)
QB0
QB1
DQ(CL3)
DA0
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4. CAS Interrupt (II) : Read Interrupted Write & DQM
* Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
2. To prevent bus contention, DQM should be issued which makes a least one gap between data in and data out.
RD
WR
D0
D1
D2
D3
RD
WR
D0
D1
D2
D3
WR
RD
Hi-Z
Hi-Z
D0
D1
D2
D3
RD
WR
D0
D1
D2
D3
Q0
Hi-Z
Note 1
RD
WR
D0
D1
D2
D3
RD
WR
D0
D1
D2
D3
WR
RD
Hi-Z
D0
D1
D2
D3
RD
WR
D0
D1
D2
Q0
Hi-Z
Note 2
D0
D1
D2
D3
RD
WR
WR
(1) CL=2, BL=4
CLK
i) CMD
DQM
DQ
ii) CMD
DQM
DQ
iii) CMD
DQM
DQ
iv) CMD
DQM
DQ
(2) CL=3, BL=4
CLK
i) CMD
DQM
DQ
ii) CMD
DQM
DQ
iii) CMD
DQM
DQ
iv) CMD
DQM
DQ
v) CMD
DQM
DQ
D3
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5. Write Interrupted by Precharge & DQM
Note : 1. To inhibit invalid write, DQM should be issued.
2. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only another bank precharge of dual banks operation.
6. Precharge
7. Auto Precharge
* Note : 1. The row active command of the precharge bank can be issued after t
RP
from this point.
The new read/write command of other active bank can be issued from this point.
At burst read/write with auto precharge,
CAS
interrupt of the same/another bank is illegal.
WR
PRE
Note 2
Note 1
D0
D1
D2
D3
Masked by DQM
CLK
CMD
DQM
DQ
WR
PRE
D0
D1
D2
D3
CLK
CMD
DQ
1) Normal Write (BL=4)
t
RDL
RD
PRE
Q0
Q1
Q2
Q3
CLK
CMD
DQ(CL2)
2) Read (BL=4)
Q0
Q1
Q2
Q3
DQ(CL3)
WR
D0
D1
D2
D3
CLK
CMD
DQ
1) Normal Write (BL=4)
Note 1
RD
Q0
Q1
Q2
Q3
CLK
CMD
DQ(CL2)
2) Read (BL=4)
Q0
Q1
Q2
Q3
DQ(CL3)
Auto Precharge Starts
Note 1
Auto Precharge Starts
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8. Burst Stop & Precharge Interrupt
9. MRS
Note :
1. t
RDL
: 2CLK, Last Data in to Row Precharge.
2. t
BDL
: 1CLK, Last Data in to Burst Stop Delay.
3. Number of valid output data after Row precharge or burst stop : 1,2 for CAS latency=2,3 respectively.
4. PRE : Both banks precharge if necessary.
MRS can be issued only at all bank precharge state.
2) Write Burst Stop (BL=8)
DQ(CL2)
DQ(CL3)
WR
PRE
Note 1
D0
D1
D2
D3
CLK
CMD
DQM
DQ
WR
STOP
D1
CLK
CMD
DQ
t
BDL
(note 2)
1) Write Interrupted by Precharge (BL=4)
t
RDL
D0
D2
RD
Q0
Q1
CLK
CMD
DQ(CL2)
4) Read Burst Stop (BL=4)
Q0
Q1
DQ(CL3)
STOP
Note 3
1
2
RD
Q0
Q1
CLK
CMD
3) Read Interrupted by Precharge (BL=4)
Q0
Q1
PRE
Note 3
1
2
PRE
MRS
Note 4
CLK
CMD
Mode Register Set
1CLK
ACT
t
RP
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10. Clock Suspend Exit & Power Down Exit
11. Auto Refresh & Self Refresh
* Note : 1. Active power down : one or more bank active state.
2. Precharge power down : both bank precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after Auto Refresh command.
During t
RC
from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, both banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refresh interval and refresh operation are performed internally.
After self refresh entry, self refresh mode is kept while CKE is LOW.
During self refresh mode, all inputs expect CKE will be don't cared, and outputs will be in Hi-Z state.
During t
RC
from self refresh exit command, any other command can not be accepted.
Before/After self refresh mode, burst auto refresh cycle (2K cycles ) is recommended.
2) Power Down (=Precharge Power Down) Exit
Note 1
CLK
CMD
1) Clock Suspend (=Active Power Down) Exit
RD
t
SS
CKE
Internal
CLK
Note 2
CLK
CMD
ACT
CKE
Internal
CLK
t
SS
NOP
2) Self Refresh
CLK
CMD
1) Auto Refresh
CKE
Internal
CLK
CLK
CMD
SR
CKE
PRE
Note 4
PRE
AR
CMD
Note 5
~~
~ ~
~~
~~
t
RP
t
RC
Note 3
Note 6
~~
CMD
~~
Note 4
t
RP
t
RC
~~
~~
~~
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12. About Burst Type Control
Sequential counting
At MRS A3="0". See the BURST SEQUENCE TABE.(BL=4,8)
BL=1,2,4,8 and full page wrap around.
Basic
MODE
Interleave counting
At MRS A3=" 1". See the BURST SEQUENCE TABE.(BL=4,8)
BL=4,8 At BL=1,2 Interleave Counting = Sequential Counting
Random
MODE
Random column Access
t
CCD
= 1 CLK
Every cycle Read/Write Command with random column address can realize
Random Column Access.
That is similar to Extended Data Out (EDO) Operation of convention DRAM.
13. About Burst Length Control
1
At MRS A2,1,0 = "000".
At auto precharge, tRAS should not be violated.
2
At MRS A2,1,0 = "001".
At auto precharge, tRAS should not be violated.
4
At MRS A2,1,0 = "010"
Basic
MODE
8
At MRS A2,1,0 = "011".
Special
MODE
BRSW
At MRS A9="1".
Read burst = 1,2,4,8, full page/write Burst =1
At auto precharge of write, tRAS should not be violated.
RAS Interrupt
(Interrupted by Precharge)
Before the end of burst, Row precharge command of the same bank
Stops read/write burst with Row precharge.
t
RDL
= 2 with DQM, valid DQ after burst stop is 1,2 for CL=2,3 respectively
During read/write burst with auto precharge, RAS interrupt cannot be issued.
Interrupt
MODE
CAS
Interrupt
Before the end of burst, new read/write stops read/write burst and starts new
read/write burst or block write.
During read/write burst with auto precharge,
CAS
interrupt can not be issued.
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Power On Sequence & Auto Refresh
KEY
KEY
KEY
Ra
BS
Ra
High level is necessary
High level is necessary
High-Z
t
RP
t
RC
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
A10/AP
WE
DQM
DQ
Precharge
(All Banks)
Auto Refresh
Auto Refresh
Mode Regiser Set
Row Active
(A-Bank)
: Don't care
~ ~
~~
~ ~
~~
~ ~
~ ~
~ ~
~ ~
~~
~ ~
~~
~ ~
~ ~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
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Single Bit Read-Write-Read Cycles (Same Page) @CAS Latency=3, Burst Length=1
Rb
High
t
RCD
t
RP
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
A10/AP
WE
DQM
DQ
Row Active
Read
Write
Row Active
: Don't care
t
CH
t
CL
t
CC
Ra
Ca
Cb
Cc
BS
BS
BS
BS
BS
BS
Ra
Rb
Qa
Db
Qc
t
RAS
t
RC
t
SH
t
SS
*Note 1
t
SH
t
SS
t
CCD
t
SH
t
SS
t
SH
t
SS
t
SS
t
SH
*Note 2
*Note 2,3
*Note 2,3
*Note 2,3
*Note 4
*Note 2
*Note 3
*Note 3
*Note 3
*Note 4
t
SH
t
SS
t
SH
t
SS
t
SH
t
SS
t
RAC
t
SAC
t
SLZ
t
OH
t
SHZ
Read
Precharge
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* Note : 1. All inputs can be don't care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
Active & Read/Write
0 Bank
A
1 Bank
B
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP
BA Operation
0
Disable auto precharge, leave bank A active at end of burst.
0
1
Disable auto precharge, leave bank B active at end of burst.
0
Enable auto precharge, precharge bank A at end of burst.
1
1
Enable auto precharge, precharge bank B at end of burst.
4. A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
BA Precharge
0 0
Bank
A
0 1
Bank
B
1 X
Both
Bank
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Read & Write Cycle at Same Bank @Burst Length=4
High
t
RC
t
RCD
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
WE
DQM
DQ
(CL = 2)
Row Active
(A-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
Row Active
(A-Bank)
Precharge
(A-Bank)
: Don't care
*Note 1
*Note 2
Ra
Ca0
Rb
Cb0
Ra
Rb
A10/AP
Qa0
t
OH
Qa1
Qa2
Qa3
Db0
Db1
Db2
Db3
t
RAC
t
SAC
*Note 3
t
SHZ
*Note 4
t
RDL
Qa0
t
OH
Qa1
Qa2
Qa3
Db0
Db1
Db2
Db3
t
RAC
t
SAC
*Note 3
t
SHZ
*Note 4
t
RDL
Write
(A-Bank)
DQ
(CL = 3)
*Note : 1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS latency-1] valid output data available after Row
enters precharge. Last valid output will be Hi-Z after t
SHZ
from the clock.
3. Access time from Row address. t
CC
*(t
RCD
+ CAS latency-1) + t
SAC
4. Output will be Hi-Z after the end of burst. (1,2,4 & 8)
At Full page bit burst, burst is wrap-around.
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Page Read & Write Cycle at Same Bank @Burst Length=4
t
RDL
High
t
RCD
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
WE
DQM
DQ
(CL=2)
Row Active
(A-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
: Don't care
*Note 2
Ra
Ca0
Cb0
Cc0
Ra
A10/AP
Qa0
Qa1
Qb0
Qb1
Dc0
Dc1
Dd0
Dd1
Qa0
Qa1
Qb0
Write
(A-Bank)
Cd0
t
CDL
*Note 2
*Note1
*Note3
Dc0
Dc1
Dd0
Dd1
Read
(A-Bank)
Write
(A-Bank)
DQ
(CL=3)
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention.
2. Row precharge will interrupt writing. Last data input, t
RDL
before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data
after Row precharge cycle will be masked internally.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Page Read Cycle at Different Bank @Burst Length = 4
* Note : 1.
CS
can be don't care when
RAS
,
CAS
and
WE
are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read ad the precharge banks must be the same.
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
Read
(A-Bank)
: Don't care
RAa
CAa
A10/AP
CBb
Read
(B-Bank)
Row Active
(B-Bank)
*Note 1
*Note 2
RBb
CAc
CBd
CAe
RAa
RBb
WE
DQM
QBb1
QBb0
QAa0 QAa1 QAa2 QAa3
QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
QBb1
QBb0
QAa0 QAa1 QAa2 QAa3
QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
Read
(A-Bank)
Read
(B-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
DQ
(CL=2)
DQ
(CL=3)
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Page Write Cycle at Different Bank @Burst Length=4
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active with
(A-Bank)
Write
(A-Bank)
: Don't care
RAa
CAa
A10/AP
CBb
Write
(B-Bank)
Row Active
(B-Bank)
RBb
CAc
RAa
RBb
WE
DBb1
DBb0
DAa0 DAa1 DAa2 DAa3
DBb2 DBb3 DAc0 DAc1
Write
(A-Bank)
Precharge
(Both Banks)
DQM
DQ
t
CDL
DBd0 DBd1
*Note 2
CBd
t
RDL
*Note 1
Write
(B-Bank)
* Note:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and precharge banks must be the same.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Read & Write Cycle at Different Bank @Burst Length=4
* Note : t
CDL
should be met to complete write.
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
Read
(A-Bank)
: Don't care
RAa
CAa
A10/AP
RBb
Precharge
(A-Bank)
CBb
CAc
RAa
WE
QAa2
QAa1
QAa0
QAa3
DBb0
Write
(B-Bank)
Read
(A-Bank)
DQM
QAc0 QAc1
RAc
RAc
RBb
t
CDL
*Note 1
QAa3
QAa2
QAa0 QAa1
DBb0 DBb1
QAc0
DBb2 DBb3
QAc1 QAc2
DQ
(CL=2)
DBb1 DBb2 DBb3
DQ
(CL=3)
Row Active
(A-Bank)
Row Active
(B-Bank)
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
29
AMIC Technology, Corp.
Read & Write Cycle with Auto Precharge I @Burst Length=4
*Note : tRCD should be controlled to meet minimum tRAS before internal precharge start.
(In the case of Burst Length=1 & 2, BRSW mode)
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
Row Active
(B-Bank)
: Don't care
A10/AP
Auto Precharge
Start Point
(A-Bank)
WE
QAa2
QAa1
QAa0
QAa3
DBb0
Auto Precharge
Start Point
(B-Bank)
DQM
QAa3
QAa2
QAa0
QAa1
DBb0 DBb1 DBb2 DBb3
DQ
(CL=2)
DBb1 DBb2 DBb3
DQ
(CL=3)
Write with
Auto Precharge
(B-Bank)
Read with
Auto Precharge
(A-Bank)
RAa
RBb
CAa
CBb
RAa
RBb
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Read & Write Cycle with Auto Precharge II @Burst Length=4
* Note : When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
-
if read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank auto
precharge will start at B Bank read command input point.
-
Any command can not be issued at A Bank during t
RP
after A Bank auto precharge starts.
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
Row Active
(B-Bank)
: Don't care
Ra
Rb
A10/AP
Ca
Read without
Auto Precharge
(B-Bank)
Auto Precharge
Strart Point
(A-Bank)
*Note 1
Ra
WE
Qb0
Qa1
Qa0
Qb1
Qb2
Write with
Auto Precharge
(A-Bank)
DQM
Cb
Qb1
Qb0
Qa0
Qa1
Qb2
Qb3
Da0
Da1
DQ
(CL=2)
Qb3
Da0
Da1
DQ
(CL=3)
Row Active
(A-Bank)
Rb
Read with
Auto Pre
Charge
(A-Bank)
Ra
Ca
Ra
Precharge
(B-Bank)
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Read & Write Cycle with Auto Precharge III @Burst Length=4
* Note : Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
: Don't care
Ra
A10/AP
Ca
Ra
WE
Qa2
Qa1
Qa0
Qa3
Qb0
DQM
Qa3
Qa2
Qa0
Qa1
Qb0
Qb1
Qb2
Qb3
DQ
(CL=2)
Qb1
Db2
Db3
DQ
(CL=3)
Auto Precharge
Start Point
(B-Bank)
Read with
Auto Preharge
(A-Bank)
Rb
Cb
Rb
Read with
Auto Precharge
(B-Bank)
Auto Precharge
Start Point
(A-Bank)
Row Active
(B-Bank)
* Note 1
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
32
AMIC Technology, Corp.
Read Interrupted by Precharge Command & Read Burst Stop Cycle (@Burst Length = Full Page)
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ's after burst stop, it is same as the case of
RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
3. Burst stop is valid at every burst length.
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
RAa
WE
QAa3
QAa2
QAa1
QAa4
QAb0
DQM
QAa4
QAa3
QAa1 QAa2
QAb0 QAb1 QAb2 QAb3
DQ
(CL=2)
QAb1 QAb2 QAb3
DQ
(CL=3)
Precharge
(A-Bank)
Read
(A-Bank)
CAb
Read
(A-Bank)
Burst Stop
* Note 1
* Note 1
1
* Note 2
QAa0
QAb4 QAb5
1
QAa0
2
QAb4 QAb5
2
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
33
AMIC Technology, Corp.
Write Interrupted by Precharge Command & Write Burst Stop Cycle (@ Burst Length = Full Page)
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
RAa
WE
DQM
DAa4
DAa3
DAa1
DAa2
DAb0 DAb1 DAb2 DAb3
DQ
Precharge
(A-Bank)
Write
(A-Bank)
CAb
Write
(A-Bank)
Burst Stop
* Note 1
* Note 1
* Note 2
DAa0
DAb4 DAb5
t
RDL
t
BDL
* Note 3
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. Data-in at the cycle of burst stop command cannot be written into corresponding memory cell.
It is defined by AC parameter of tBDL(=1CLK).
3. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.
It is defined by AC parameter of tRDL(=2CLK).
DQM at write interrupted by precharge command is needed to ensure tRDL of 2CLK.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
4. Burst stop is valid only at every burst length.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
: Don't care
A10/AP
WE
QAb1
QAb0
DBc0
DQM
QAb1
QAb0
DBc0
QAd0
DQ
(CL=2)
QAd0
DQ
(CL=3)
Write with
Auto Precharge
(B-Bank)
Write
(A-Bank)
Row Active
(A-Bank)
DAa0
QAd1
DAa0
QAd1
* Note 2
Row Active
(B-Bank)
Read with
Auto Precharge
(A-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
RAa
CAa
RAc
RBb
CAb
CBc
CAd
RAa
RAc
RBb
Burst Read Single Bit Write Cycle @Burst Length=2, BRSW
* Note : 1. BRSW mode is enabled by setting A9 "High" at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to "1" regardless of programed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated.
Auto precharge is executed at the burst-end cycle, so in the case of BRSW write command,
The next cycle starts the precharge.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
35
AMIC Technology, Corp.
Clock Suspension & DQM Operation Cycle @CAS Latency = 2, Burst Length=4
* Note : DQM needed to prevent bus contention.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
: Don't care
Ra
A10/AP
Ca
Ra
WE
DQM
Qa1
Qb0
Qb1
Dc0
DQ
Clock
Suspension
Read
Cb
Read
Qa0
Dc2
* Note 1
Qa2
Cc
Clock
Suspension
t
SHZ
Qa3
t
SHZ
Write
DQM
Write
Read DQM
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
36
AMIC Technology, Corp.
Active/Precharge Power Down Mode @CAS Lantency=2, Burst Length=4
* Note : 1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least "1CLK + t
SS
" prior to Row active command.
3. Cannot violate minimum refresh specification. (32ms)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Precharge
Power-down
Exit
: Don't care
A10/AP
Active
Power-down
Entry
Row Active
WE
Qa2
Read
Precharge
DQM
DQ
Qa0
Qa1
Precharge
Power-down
Entry
t
SS
t
SS
* Note 2
* Note 1
*Note 3
t
SS
t
SS
Ra
Ca
Ra
Active
Power-down
Exit
~~
~ ~
~ ~
~ ~
~~
~ ~
~~
~~
~~
~ ~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~ ~
~ ~
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
37
AMIC Technology, Corp.
Self Refresh Entry & Exit Cycle
* Note : TO ENTER SELF REFRESH MODE
1.
CS, RAS &
CAS
with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.
3. The device remains in self refresh mode as long as CKE stays "Low".
(cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5.
CS starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh exit.
7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit.
If the system uses burst refresh.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
: Don't care
A10/AP
WE
Self Refresh Exit
Auto Refresh
DQM
DQ
Self Refresh Entry
t
SS
* Note 4
* Note 1
~ ~
~ ~
~ ~
~~
~ ~
* Note 3
* Note 2
~ ~
t
SS
* Note 6
t
RC min.
~ ~
~ ~
* Note 5
~~
~ ~
* Note 7
* Note 7
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
~~
~ ~
Hi-Z
Hi-Z
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
38
AMIC Technology, Corp.
Mode Register Set Cycle
Auto Refresh Cycle
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
CLOCK
CKE
CS
RAS
CAS
ADDR
: Don't care
WE
Auto Refresh
New Command
DQM
DQ
MRS
~ ~
~ ~
* Note 1
~~
~ ~
Hi-Z
Hi-Z
High
High
~ ~
~ ~
t
RC
*Note 2
~ ~
~~
~ ~
~~
~ ~
Key
* Note 3
~~
~ ~
New
Command
~~
~ ~
Ra
* Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
* Note : 1.
CS, RAS ,
CAS
&
WE
activation at the same clock cycle with address key will set internal mode register.
2. Minimum 2 clock cycles should be met before new
RAS activation.
3. Please refer to Mode Register Set table.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
39
AMIC Technology, Corp.
Deep Power Down Mode Entry
CLK
CS
ADDR
CKE
WE
CAS
RAS
DQM
DQ
input
DQ
output
High-Z
t
RP
Precharge Command
Deep Power Down Entry
Normal Mode
Deep Power Down Mode
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
40
AMIC Technology, Corp.
Deep Power Down Mode Exit
CLK
CKE
CS
RAS
CAS
WE
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
~ ~
200 us
t
RP
t
RC
Deep Power
Down Exit
All Banks
Precharge
Auto
Refresh
Auto
Refresh
Mode
Register
Set
Extended
Mode
Register Set
New
Command
Accepted
Here
The deep power down mode is exited by asserting CKE high. After the exit, the following sequence is needed to enter a new
command:
1. Maintain NOP input conditions for a minimum of 200
s
2. Issue precharge commands for all banks of the device
3. Issue eight or more auto-refresh commands
4. Issue a mode register set command to initialize the mode register
5. Issue an extended mode register set command to initialize the extended mode register
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
41
AMIC Technology, Corp.
Function Truth Table (Table 1)
Current
State
CS RAS
CAS
WE
BA Address
Action
Note
H X X X X
X NOP
L H H H X
X NOP
L H H L X
X ILLEGAL
2
L H L X BA
CA,
A10/AP ILLEGAL
2
L
L
H
H
BA
RA
Row Active; Latch Row Address
L L H L BA PA NOP
4
L
L
L
H
X
X
Auto Refresh or Self Refresh
5
IDLE
L
L
L
L
OP Code
Mode Register Access
5
H X X X X
X NOP
L H H H X
X NOP
L H H L X
X ILLEGAL
2
L
H
L
H
BA
CA,A10/AP Begin Read; Latch CA; Determine AP
L
H
L
L
BA
CA,A10/AP Begin Write; Latch CA; Determine AP
L L H H BA RA ILLEGAL
2
L L H L BA PA Precharge
Row
Active
L L L X X
X ILLEGAL
H X X X X
X NOP(Continue Burst to End
Row Active)
L H H H X
X NOP(Continue Burst to End
Row Active)
L H H L X
X Term burst
Row Active
L
H
L
H
BA
CA,A10/AP Term burst; Begin Read; Latch CA; Determine AP
3
L
H
L
L
BA
CA,AP
Term burst; Begin Write; Latch CA; Determine AP
3
L L H H BA RA ILLEGAL
2
L
L
H
L
BA
PA
Term Burst; Precharge timing for Reads
3
Read
L L L X X
X ILLEGAL
H X X X X
X NOP(Continue Burst to End
Row Active)
L H H H X
X NOP(Continue Burst to End
Row Active)
L H H L X
X ILLEGAL
L
H
L
H
BA
CA,A10/AP Term burst; Begin Read; Latch CA; Determine AP
3
L
H
L
L
BA
CA,A10/AP Term burst; Begin Read; Latch CA; Determine AP
3
L L H H BA RA ILLEGAL
2
L
L
H
L
BA
A10/AP
Term Burst; Precharge timing for Writes
3
Write
L L L X X
X ILLEGAL
H X X X X
X NOP(Continue Burst to End
Precharge)
L H H H X
X NOP(Continue Burst to End
Precharge)
L H H L X
X ILLEGAL
L H L H BA
CA,A10/AP ILLEGAL
2
L H L L BA
CA,A10/AP ILLEGAL
2
L L H X BA RA,
PA
ILLEGAL
Read with
Auto
Precharge
L L L X X
X ILLEGAL
2
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
42
AMIC Technology, Corp.
Function Truth Table (Table 1, Continued)
Current
State
CS RAS
CAS
WE
BA Address
Action
Note
H X X X X
X NOP(Continue Burst to End
Precharge)
L H H H X
X NOP(Continue Burst to End
Precharge)
L H H L X
X ILLEGAL
L H L H BA
CA,A10/AP ILLEGAL
2
L H L L BA
CA,A10/AP ILLEGAL
2
L L H X BA RA,
PA
ILLEGAL
Write with
Auto
Precharge
L L L X X
X ILLEGAL
2
H X X X X
X NOP
Idle after t
RP
L H H H X
X NOP
Idle after t
RP
L H H L X
X ILLEGAL
L H L X BA
CA,A10/AP ILLEGAL
2
L L H H BA RA ILLEGAL
2
L L H L BA PA NOP
Idle after t
RP
2
Precharge
L L L X X
X ILLEGAL
4
H X X X X
X NOP
Row Active after t
RCD
L H H H X
X NOP
Row Active after t
RCD
L H H L X
X ILLEGAL
L H L X BA
CA,A10/AP ILLEGAL
2
L L H H BA RA ILLEGAL
2
L L H L BA PA ILLEGAL
2
Row
Activating
L L L X X
X ILLEGAL
2
H X X X X
X NOP
Idle after t
RC
L H H X X
X NOP
Idle after t
RC
L H L X X
X ILLEGAL
L L H X X
X ILLEGAL
Refreshing
L L L X X
X ILLEGAL
Abbreviations
RA = Row Address
BA = Bank Address
AP = Auto Precharge
NOP = No Operation Command
CA = Column Address
PA = Precharge All
Note: 1. All entries assume that CKE was active (High) during the preceding clock cycle and the current clock cycle.
2. Illegal to bank in specified state : Function may be legal in the bank indicated by BA, depending on the state of that
bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and PA).
5. Illegal if any banks is not idle.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
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AMIC Technology, Corp.
Function Truth Table for CKE (Table 2)
Current
State
CKE
n-1
CKE
n
CS
RAS
CAS
WE
Address
Action Note
H X X X X X X INVALID
L H H X X X X Exit Self Refresh
ABI after t
RC
6
L H L H H H X Exit Self Refresh
ABI after t
RC
6
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
Self
Refresh
L L X X X X X NOP(Maintain
Self
Refresh)
H X X X X X X INVALID
L H H X X X X Exit Power Down
ABI
7
L H L H H H X Exit Power Down
ABI
7
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
Both
Bank
Precharge
Power
Down
L L X X X X X NOP(Maintain
Power
Down
Mode)
H H X X X X X Refer
to
Table
1
H L H X X X X Enter
Power
Down
8
H L L H H H X Enter
Power
Down
8
H L L H H L X ILLEGAL
H L L H L X X ILLEGAL
H L L L H X X ILLEGAL
H L L L L H X Enter
Self
Refresh
8
H L L L L L X ILLEGAL
All
Banks
Idle
L L X X X X X NOP
H
H
X
X
X
X
X
Refer to Operations in Table 1
H
L
X
X
X
X
X
Begin Clock Suspend next cycle
9
L
H
X
X
X
X
X
Exit Clock Suspend next cycle
9
Any State
Other than
Listed
Above
L L X X X X X Maintain
clock
Suspend
Abbreviations : ABI = All Banks Idle
Note: 6. After CKE's low to high transition to exit self refresh mode. And a time of t
RC
(min) has to be elapse after CKE's low to
high transition to issue a new command.
7. CKE low to high transition is asynchronous as if restarts internal clock.
A minimum setup time "tSS + one clock" must be satisfied before any command other than exit.
8. Power-down and self refresh can be entered only from the all banks idle state.
9. Must be a legal command.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
44
AMIC Technology, Corp.
Ordering Information
Part No.
Min. Cycle Time
(ns)
Max. Clock Frequency
(MHz)
Access Time
Package
A43E06161V-75
7.5
133
6 ns
50 TSOP (II)
A43E06161V-75F
7.5
133
6 ns
50 Pb-Free TSOP (II)
A43E06161V-75U
7.5
133
6 ns
50 TSOP (II)
A43E06161V-75UF
7.5
133
6 ns
50 Pb-Free TSOP (II)
A43E06161V-95
9.5
105
7 ns
50 TSOP (II)
A43E06161V-95F
9.5
105
7 ns
50 Pb-Free TSOP (II)
A43E06161V-95U
9.5
105
7 ns
50 TSOP (II)
A43E06161V-95UF
9.5
105
7 ns
50 Pb-Free TSOP (II)
Note: -U is for industrial operating temperature range -40C to +85C.
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
45
AMIC Technology, Corp.
Package Information
TSOP 50L (Type II) Outline Dimensions
unit: inches/mm
1
E1
E
c
50
A
1
A
2
A
D
0.1
e
D
b
L
Detail "A"
Detail "A"
25
26
Seating Plane
R0.15 REF.
R0.15 REF.
0.25
L
1
Dimensions in inches
Dimensions in mm
Symbol
Min Nom
Max Min Nom
Max
A -
-
0.047
-
-
1.20
A
1
0.002
- -
0.05
- -
A
2
0.037
0.040
0.041
0.95
1.016
1.05
b 0.012
-
0.018
0.30 - 0.45
c 0.005
-
0.008
0.12 - 0.21
D 0.821
0.825
0.829
20.855
20.955
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