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Электронный компонент: A4LP62E16512U-70LLTF

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LP62E16512-T Series
512K X 16 BIT LOW VOLTAGE CMOS SRAM
(August, 2004, Version 1.1)
AMIC Technology, Corp.
Document Title
512K X 16 BIT LOW VOLTAGE CMOS SRAM
Revision History
Rev. No. History Issue
Date Remark
0.0
Initial issue
April 26, 2002
Preliminary
1.0
Final version release
July 17, 2003
Final
1.1
Add Pb-Free package type
August 19, 2004
LP62E16512-T Series
512K X 16 BIT LOW VOLTAGE CMOS SRAM
(August, 2004, Version 1.1)
1
AMIC Technology, Corp.
Features
Operating voltage: 1.65V to 2.2V
Access times: 70 ns (max.)
Current:
Very low power version: Operating: 40mA (max.)
Standby: 10
A (max.)
Full static operation, no clock or refreshing required
All inputs and outputs are directly TTL-compatible
Common I/O using three-state output
Data retention voltage: 1.2V (min.)
Available in 48-ball CSP (8
10mm) packages
General Description
The LP62E16512-T is a low operating current 8,388,608-bit
static random access memory organized as 524,288 words
by 16 bits and operates on low power voltage from 1.65V to
2.2V. It is built using AMIC's high performance CMOS
process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
Two chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage as
low as 1.2V.
Product Family
Power Dissipation
Product
Family
Operating
Temperature
VCC Range
Speed
Data
Retention
(I
CCDR
, Typ.)
Standby
(I
SB1
, Typ.)
Operating
(I
CC2
, Typ.)
Package
Type
LP62E16512
-25
C ~ +85
C
1.65V~2.2V 70ns
0.1
A 0.5
A
3mA 48
CSP
1. Typical values are measured at VCC = 1.8V, T
A
= 25
C and not 100% tested.
2. Data retention current VCC = 1.2V.
Pin Configurations
CSP (Chip Size Package)
48-pin Top View
I/O
9
I/O
10
GND
VCC
I/O
15
I/O
16
A18
A8
NC
A9
A12
A10
A11
NC
A13
A14
A15
I/O
8
I/O
7
I/O
3
I/O
1
GND
VCC
A0
A3
A5
A6
A4
A1
A2
CS
2
6
5
4
3
2
1
A
B
C
D
E
F
G
H
I/O
14
I/O
13
I/O
12
I/O
11
A17
NC
A7
A16
I/O
2
I/O
4
I/O
5
I/O
6
LB
HB
WE
OE
CS
1
LP62E16512-T Series
(August, 2004, Version 1.1)
2
AMIC Technology, Corp.
Block Diagram
DECODER
1024 X 8192
MEMORY ARRAY
COLUMN I/O
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
VCC
GND
I/O
8
I/O
1
A18
A17
A0
INPUT
DATA
CIRCUIT
I/O
9
I/O
16
LB
WE
OE
HB
LB
CS
2
CS
1
LP62E16512-T Series
(August, 2004, Version 1.1)
3
AMIC Technology, Corp.
Pin Description - CSP
Symbol Description Symbol Description
A0 - A18
Address Inputs
HB
Higher Byte Enable Input
(I/O
9
- I/O
16
)
1
CS , CS
2
Chip Enable
OE
Output Enable
I/O
1
- I/O
16
Data Input/Output
VCC
Power Supply
WE
Write Enable Input
GND
Ground
LB
Byte Enable Input
(I/O
1
- I/O
8
)
NC No
Connection


Recommended DC Operating Conditions
(T
A
= -25
C to + 85
C)
Symbol Parameter Min.
Typ.
Max. Unit
VCC Supply
Voltage
1.65
1.8
2.2
V
GND
Ground
0 0 0
V
V
IH
Input High Voltage
1.4
-
VCC + 0.3
V
V
IL
Input Low Voltage
-0.3
-
+0.4
V
C
L
Output
Load
-
-
30
pF
TTL Output
Load
-
-
1
-
LP62E16512-T Series
(August, 2004, Version 1.1)
4
AMIC Technology, Corp.
Absolute Maximum Ratings*

VCC to GND .............................................. -0.5V to +3.0V
IN, IN/OUT Volt to GND................... -0.5V to VCC + 0.5V
Operating Temperature, Topr ...................-25
C to +85
C
Storage Temperature, Tstg.....................-55
C to +125
C
Power Dissipation, P
T.......................................................................
0.7W
*Comments

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may affect
device reliability.
DC Electrical Characteristics
(T
A
= -25
C to + 85
C, VCC = 1.65V to 2.2V, GND = 0V)
Symbol Parameter
LP62E16512-70LLT
Unit
Conditions
Min.
Max.
I
LI
Input Leakage Current
-
1
A
V
IN
= GND to VCC
I
LO

Output Leakage Current
-
1
A
1
CS = V
IH
or CS
2
= V
IL
or
LB = HB = V
IH
V
I/O
= GND to VCC
I
CC
Active Power Supply
Current
- 5
mA
1
CS = V
IL
, CS
2
= V
IH
,
LB = V
IL
or HB = V
IL ,
I
I/O
= 0mA
I
CC1
Dynamic Operating
- 40
mA
Min. Cycle, Duty = 100%,
1
CS = V
IL
,
CS
2
= V
IH
, LB = V
IL
or HB = V
IL
I
I/O
= 0mA
I
CC2
Current
- 5
mA
1
CS
0.2V, CS
2
VCC-0.2V ,
LB
0.2V or HB
0.2V
f = 1MHz , I
I/O
= 0mA
I
SB
-
1
mA
1
CS = V
IH
or
CS
2
= V
IL
or
LB = HB = V
IH
I
SB1
Standby Current
- 10
A
1
CS
VCC - 0.2V or CS
2
0.2V or
LB = HB
VCC-0.2V
V
IN
VCC-0.2V or V
IN
0.2V
V
OL
Output Low Voltage
-
0.2
V
I
OL
= 0.1 mA
V
OH
Output High Voltage
1.4
-
V
I
OH
= -1.0 mA
LP62E16512-T Series
(August, 2004, Version 1.1)
5
AMIC Technology, Corp.
Truth Table
1
CS
CS
2
OE
WE
LB
HB
I/O
1
to I/O
8
Mode
I/O
9
to I/O
16
Mode
VCC Current
H
X
X
X
X
X
High - Z
High - Z
I
SB1
, I
SB
X
L
X
X
X
X
High - Z
High - Z
I
SB1
, I
SB
X
X
X
X
H
H
High - Z
High - Z
I
SB1
, I
SB
L L
Read
Read
I
CC1
, I
CC2
, I
CC
L H L H L H Read
High
-
Z
I
CC1
, I
CC2
, I
CC
H
L
High
-
Z
Read
I
CC1
, I
CC2
, I
CC
L L
Write
Write
I
CC1
, I
CC2
, I
CC
L H X L L H Write
High
-
Z
I
CC1
, I
CC2
, I
CC
H
L
High
-
Z
Write
I
CC1
, I
CC2
, I
CC
L
H
H
H
L
X
High - Z
High - Z
I
CC1
, I
CC2
, I
CC
L
H
H
H
X
L
High - Z
High - Z
I
CC1
, I
CC2
, I
CC
Note: X = H or L
Capacitance
(T
A
= 25
C, f = 1.0MHz)
Symbol Parameter Min.
Max.
Unit
Conditions
C
IN
* Input
Capacitance
6 pF V
IN
= 0V
C
I/O
* Input/Output
Capacitance 8 pF V
I/O
= 0V
* These parameters are sampled and not 100% tested.
LP62E16512-T Series
(August, 2004, Version 1.1)
6
AMIC Technology, Corp.
AC Characteristics
(T
A
= -25
C to +85
C, VCC = 1.65V to 2.2V)
Symbol Parameter
LP62E16512-70LLT
Unit
Min.
Max.
Read Cycle
t
RC
Read Cycle Time
70
-
ns
t
AA
Address Access Time
-
70
ns
t
Acs1 ,
t
Acs2
Chip Enable Access Time
-
70
ns
t
BE
Byte Enable Access Time
-
70
ns
t
OE
Output Enable to Output Valid
-
35
ns
t
CLZ1 ,
t
CLZ2
Chip Enable to Output in Low Z
10
-
ns
t
BLZ
Byte Enable to Output in Low Z
10
-
ns
t
OLZ
Output Enable to Output in Low Z
5
-
ns
t
CHZ1 ,
t
CHZ2
Chip Disable to Output in High Z
-
25
ns
t
BHZ
Byte Disable to Output in High Z
-
25
ns
t
OHZ
Output Disable to Output in High Z
-
25
ns
t
OH
Output Hold from Address Change
5
-
ns
Write Cycle
t
WC
Write Cycle Time
70
-
ns
t
CW1 ,
t
CW2
Chip Enable to End of Write
60
-
ns
t
BW
Byte Enable to End of Write
60
-
ns
t
AS
Address Setup Time
0
-
ns
t
AW
Address Valid to End of Write
60
-
ns
t
WP
Write Pulse Width
50
-
ns
t
WR
Write Recovery Time
0
-
ns
t
WHZ
Write to Output in High Z
-
25
ns
t
DW
Data to Write Time Overlap
30
-
ns
t
DH
Data Hold from Write Time
0
-
ns
t
OW
Output Active from End of Write
5
-
ns
Note: t
CLZ1 ,
t
CLZ2 ,
t
BLZ
, t
OLZ
, t
CHZ1
, t
CHZ2 ,
t
BHZ
and t
OHZ
and t
WHZ
are defined as the time at which the outputs achieve the open
circuit condition and are not referred to output voltage levels.
LP62E16512-T Series
(August, 2004, Version 1.1)
7
AMIC Technology, Corp.
Timing Waveforms

Read Cycle 1
(1, 2, 4)
t
RC
t
OH
t
AA
t
OH
Address
D
OUT

Read Cycle 2
(1, 2, 3)
t
RC
t
AA
Address
CS
1
t
ACS1 ,
t
ACS2
t
CHZ1
,
t
CHZ2
HB, LB
t
BHZ5
OE
t
BE
t
BLZ5
t
OE
t
OLZ5
t
OHZ5
D
OUT
t
CLZ1 ,
t
CLZ2
CS
2

Notes: 1.
WE
is high for Read Cycle.
2. Device is continuously enabled
1
CS = V
IL
, or CS
2
= V
IH
, HB = V
IL
and, or LB = V
IL
.
3. Address valid prior to or coincident with
1
CS and ( HB and, or LB ) transition low or CS
2
transition High.
4.
OE
= V
IL
.
5. Transition is measured
200mV from steady state. This parameter is sampled and not 100% tested.
LP62E16512-T Series
(August, 2004, Version 1.1)
8
AMIC Technology, Corp.
Timing Waveforms (continued)

Write Cycle 1
(Write Enable Controlled)
t
WC
t
AW
Address
CS
1
t
WR3
t
CW
DATA IN
DATA OUT
WE
HB, LB
t
BW
t
AS1
t
WP2
t
DW
t
DH
t
OW
t
WHZ4
CS
2
LP62E16512-T Series
(August, 2004, Version 1.1)
9
AMIC Technology, Corp.
Timing Waveforms (continued)

Write Cycle 2

(Chip Enable Controlled)
t
WC
t
AW
Address
CS
1
t
WR3
t
CW1
, t
CW2
t
AS1
DATA IN
DATA OUT
WE
HB, LB
t
BW
t
WP
t
DW
t
DH
t
OW
t
WHZ4
CS
2
LP62E16512-T Series
(August, 2004, Version 1.1)
10
AMIC Technology, Corp.
Timing Waveforms (continued)

Write Cycle 3

(Byte Enable Controlled)
t
WC
t
AW
Address
CS
1
t
WR3
t
CW1 ,
t
CW2
t
BW2
t
AS1
DATA IN
DATA OUT
WE
HB, LB
t
WP
t
DW
t
DH
t
OW
t
WHZ4
CS
2
Notes: 1. t
AS
is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (t
WP
, t
BW
) of a low
1
CS , WE and ( HB and , or LB ) or a high CS
2
.
3.
t
WR
is measured from the earliest of
1
CS or WE or ( HB and , or LB ) going high or CS
2
going Low to the end of the
Write cycle.
4.
OE level is high or low.
5. Transition is measured
200mV from steady state. This parameter is sampled and not 100% tested.


LP62E16512-T Series
(August, 2004, Version 1.1)
11
AMIC Technology, Corp.
AC Test Conditions
Input Pulse Levels
0.2V to VCC-0.2V
Input Rise And Fall Time
5 ns
Input and Output Timing Reference Levels
0.8V
Output Load
See Figures 1 and 2
30pF
* Including scope and jig.
* Including scope and jig.
C
L
TTL
5pF
C
L
TTL
Figure 1. Output Load
Figure 2. Output Load for t
CLZ1
, t
CLZ2
, t
BHZ
, t
BLZ
,
t
OLZ
, t
CHZ1
, t
CHZ2 ,
t
OHZ
, t
WHZ
, and t
OW
Data Retention Characteristics
(T
A
= -25
C to 85
C)
Symbol Parameter Min.
Max.
Unit
Conditions
V
DR
VCC for Data Retention
1.2
2.2
V
1
CS
VCC - 0.2V or
CS
2
0.2V or
LB = HB
VCC-0.2V
I
CCDR
Data Retention Current
- 0.2*
A
VCC = 1.2V,
1
CS
VCC - 0.2V or
CS
2
0.2V or
LB = HB
VCC-0.2V
V
IN
VCC-0.2V or V
IN
0.2V
t
CDR
Chip Disable to Data Retention Time
0
-
ns
t
R
Operation Recovery Time
t
RC
- ns
See Retention Waveform
t
VR
VCC Rising Time from Data Retention
Voltage to Operating Voltage
5 -
ms
* LP62E16512 - 70LLT
I
CCDR
: max. 0.1
A at T
A
= 25
C
(0.2
A at T
A
= 0
C to + 40
C )
LP62E16512-T Series
(August, 2004, Version 1.1)
12
AMIC Technology, Corp.
Low VCC Data Retention Waveform (1) (
CS1
Controlled)
VCC
CS1
t
CDR
V
IH
1.65V
t
R
V
IH
1.65V
DATA RETENTION MODE
t
VR
V
DR
1.2V
CS1
V
DR
- 0.2V
Low VCC Data Retention Waveform (2) (CS2 Controlled)
VCC
CS2
t
CDR
V
IL
1.65V
t
R
V
IL
1.65V
DATA RETENTION MODE
t
VR
V
DR
1.2V
0.2V
CS2
Ordering Information
Part No.
Access Time(ns)
Operating Current
Max.(mA)
Standby Current
Max.(uA)
Package
LP62E16512U-70LLT 40
10
48L
CSP
LP62E16512U-70LLTF
70
40
10
48L Pb-Free CSP
LP62E16512-T Series
(August, 2004, Version 1.1)
13
AMIC Technology, Corp.
Package Information
48LD CSP ( 8 x 10 mm ) Outline Dimensions
unit: mm
(48TFBGA)
A
1
A
B
C
D
E
F
G
H
TOP VIEW
Ball#A1 CORNER
SIDE VIEW
C
SEATING PLANE
A
A
B
C
D
E
F
G
H
1 2 3 4 5 6
1
2
3
4
5
6
C
0.10
C
S
0.25
S
A B
b (48X)
BOTTOM VIEW
Ball*A1 CORNER
E
E
1
e
B
e
D
1
D
A
0.20(4X)
0.10
C
Dimensions in mm
Symbol
MIN.
NOM.
MAX.
A ---
---
1.20
A
1
0.20
0.25
0.30
A
2
0.48
0.53
0.58
D 7.90
8.00
8.10
E 9.90
10.00
10.10
D
1
---
3.75
---
E
1
---
5.25
---
e ---
0.75
---
b 0.30
0.35
0.40
Notes:
1. THE BALL DIAMETER, BALL PITCH, STAND-OFF & PACKAGE THICKNESS
ARE DIFFERENT FROM JEDEC SPEC MO192 (LOW PROFILE BGA FAMILY).
2. PRIMARY DATUM C AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS
OF THE SOLDER BALLS.
3. DIMENSION b IS MEASURED AT THE MAXIMUM.
4. THERE SHALL BE A MINIMUM CLEARANCE OF 0.25mm BETWEEN THE EDGE OF THE
SOLDER BALL AND THE BODY EDGE.
5. BALL PAD OPENING OF SUBSTRATE IS
0.3mm (SMD)
SUGGEST TO DESIGN THE PCB LAND SIZE AS
0.3mm (NSMD)