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Электронный компонент: A62S6316G-55SF

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A62S6316 Series
64K X 16 BIT LOW VOLTAGE CMOS SRAM
(August, 2004, Version 1.1)
AMIC Technology, Corp.
Document Title
64K X 16 BIT LOW VOLTAGE CMOS SRAM
Revision History
Rev. No. History Issue
Date Remark
0.0 Initial
issue
October 8, 1998
Preliminary
0.1
Change access times from 70/100 ns to 55/70 ns(max.)
February 12, 1999
Change dynamic operating current from 80/70mA to 40mA
Modify TSOP 44L (Type II) package outline drawing
0.2
Modify truth table
June 9, 1999
0.3
Change dynamic operating current from 40mA to 50mA(max.)
June 21, 1999
0.4
Modify TSOP 44L (Type II) package outline drawing and
November 9, 1999
Dimensions
0.5
Add mini BGA package outline dimensions symbol E
2
min. and
August 12, 2002
max.
1.0
Final version release
July 11, 2003
Final
1.1
Add Pb-Free package type
August 9, 2004
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A62S6316 Series
64K X 16 BIT LOW VOLTAGE CMOS SRAM
(August, 2004, Version 1.1)
2
AMIC Technology, Corp.
Features
Operating voltage: 2.7V to 3.3V
Access times: 55/70 ns (max.)
Current:
A62S6316-S series:
Operating: 50mA (max.)
Standby: 15
A (max.)
A62S6316-SI series:
Operating: 50mA (max.)
Standby: 30
A (max.)
Extended operating temperature range : -25
C to
85
C for -SI series
Full static operation, no clock or refreshing required
All inputs and outputs are directly TTL-compatible
Common I/O using three-state output
Data retention voltage: 2V (min.)
Available in 44-pin TSOP and 48-ball Mini BGA
(6X8) packages.

General Description
The A62S6316 is a low operating current 1,048,576-bit
static random access memory organized as 65,536
words by 16 bits and operates on low power supply
voltage from 2.7V to 3.3V. It is built using AMIC's high
performance CMOS process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage
as low as 2V.
Pin Configuration
TSOP (Type II)
1
A4
A3
A2
A1
A0
CE
I/O
0
I/O
1
I/O
2
I/O
3
VCC
GND
I/O
4
I/O
5
I/O
6
I/O
7
23
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A5
A6
A7
OE
HB
LB
I/O
15
I/O
14
I/O
13
I/O
12
VCC
GND
I/O
11
I/O
10
I/O
9
I/O
8
A62S6316V
17
18
19
20
21
22
24
25
26
27
28
29
WE
A15
A14
A13
A12
NC
NC
A8
A9
A10
A11
NC
Mini BGA (6X8) Top View
1 2 3 4 5 6
A
LB
OE
A0 A1 A2 NC
B
I/O
8
HB
A3 A4
CS
I/O
0
C
I/O
9
I/O
10
A5 A6 I/O
1
I/O
2
D
VSS
I/O
11
NC A7 I/O
3
VCC
E
VCC
I/O
12
NC NC I/O
4
VSS
F
I/O
14
I/O
13
A14 A15 I/O
5
I/O
6
G
I/O
15
NC A12 A13 WE
I/O
7
H
NC
A8
A9
A10
A11
NC
A62S6316G
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A62S6316 Series
(August, 2004, Version 1.1)
1
AMIC Technology, Corp.
Block Diagram
DECODER
512 X 2048
MEMORY ARRAY
COLUMN I/O
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
VCC
GND
I/O
7
I/O
0
A15
A14
A0
WE
HB
INPUT
DATA
CIRCUIT
I/O
8
I/O
15
CE
LB
OE
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A62S6316 Series
(August, 2004, Version 1.1)
2
AMIC Technology, Corp.
Pin Description - TSOP
Pin No.
Symbol
Description
1 - 5, 18 - 21,
24 - 27,42 - 44
A0 - A15
Address Inputs
6
CE
Chip Enable Input
7 - 10, 13 - 16,
29 - 32, 35 - 38
I/O
0
- I/O
15
Data
Input/Outputs
17
WE
Write Enable Input
39
LB
Byte Enable Input (I/O
0
to I/O
7
)
40
HB
Byte Enable Input (I/O
8
to I/O
15
)
41
OE
Output Enable Input
11, 33
VCC
Power
12, 34
GND
Ground
22 , 23, 28
NC
No Connection


Recommended DC Operating Conditions
(T
A
= 0
C to + 70
C or -25
C to 85
C)
Symbol Parameter Min.
Typ.
Max.
Unit
VCC
Supply
Voltage
2.7 3.0 3.3 V
GND
Ground
0 0 0 V
V
IH
Input High Voltage
2.2
-
VCC + 0.3
V
V
IL
Input Low Voltage
-0.3
-
+0.6
V
C
L
Output
Load
-
-
30
pF
TTL Output
Load
-
-
1
-
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A62S6316 Series
(August, 2004, Version 1.1)
3
AMIC Technology, Corp.
Absolute Maximum Ratings*

VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . -25
C to +85
C
Storage Temperature, Tstg . . . . . . . . . -55
C to +125
C
Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . 260
C, 10 sec
*Comments

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may affect
device reliability.
DC Electrical Characteristics
(T
A
= 0
C to + 70
C or -25
C to 85
C, VCC = 2.7V to 3.3V, GND = 0V)
Symbol Parameter A62S6316-55S/70S
A62S6316-55SI/70SI
Unit Conditions
Min. Max. Min. Max.
I
LI
Input Leakage Current
- 1 - 1
A
V
IN
= GND to VCC
I
LO

Output Leakage Current
-
1
-
1
A
CE = V
IH
or LB = V
IH
or
HB = V
IH
or OE = V
IH
or
WE = V
IH
V
I/O
= GND to VCC
I
CC
Active Power Supply
Current
- 5 - 5
mA
CE = V
IL
, I
I/O
= 0mA
I
CC1
- 50 - 50
mA
Min. Cycle, Duty = 100%
CE = V
IL
, I
I/O
= 0mA
I
CC2
Dynamic Operating
Current
- 20 - 20
mA
CE = V
IL
, V
IH
= VCC,
V
IL
= 0V, f = 1MHz,
I
I/O
= 0 mA
I
SB
- 0.5 - 0.5
mA
CE = V
IH
I
SB1
Standby Power
Supply Current
- 15 - 30
A
CE
VCC - 0.2V
V
IN
0V
V
OL
Output Low Voltage
-
0.4
-
0.4
V
I
OL
= 2.1mA
V
OH
Output High Voltage
2.2
-
2.2
-
V
I
OH
= -1.0mA