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Электронный компонент: A67L7336E-6

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A67L8316/A67L8318/
A67L7332/A67L7336 Series
256K X 16/18, 128K X 32/36
Preliminary
LVTTL, Pipelined DBA
TM
SRAM
PRELIMINARY (December, 1999, Version 0.1)
AMIC Technology, Inc.
DBA and Direct Bus Alternation are trademarks of AMIC Technology, Inc
Document Title
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Revision History
Rev. No. History
Issue Date
Remark
0.0
Initial issue
March 11, 1999
Preliminary
0.1
Change fast access time from 4.0/4.2/4.5/5.0 ns to
December 29, 1999
4.5/5.0/6.0 ns
A67L8316/A67L8318/
A67L7332/A67L7336 Series
256K X 16/18, 128K X 32/36
Preliminary
LVTTL, Pipelined DBA
TM
SRAM
PRELIMINARY (December, 1999, Version 0.1)
1
AMIC Technology, Inc.
DBA and Direct Bus Alternation are trademarks of AMIC Technology, Inc
Features
n
Fast access time: 4.5/5.0/6.0 ns (117/100/83MHz)
n
Direct Bus Alternation between READ and WRITE
cycles allows 100% bus utilization
n
Signal +3.3V
5% power supply
n
Individual Byte Write control capability
n
Clock enable (
CEN
) pin to enable clock and suspend
operations
n
Clock-controlled and registered address, data and
control signals
n
Registered output for pipelined applications
n
Three separate chip enables allow wide range of
options for CE control, address pipelining
n
Internally self-timed write cycle
n
Selectable BURST mode (Linear or Interleaved)
n
SLEEP mode (ZZ pin) provided
n
Available in 100 pin LQFP package
General Description
The AMIC Direct Bus AlternationTM (DBATM) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
The A67L8316, A67L8318, A67L7332, A67L7336
SRAMs integrate a 256K X 16, 256K X 18, 128K X 32 or
128K X 36 SRAM core with advanced synchronous
peripheral circuitry and a 2-bit burst counter. These
SRAMs are optimized for 100 percent bus utilization
without the insertion of any wait cycles during Write-
Read alternation. The positive edge triggered single
clock input (CLK) controls all synchronous inputs
passing through the registers. The synchronous inputs
include all address, all data inputs, active low chip
enable (
CE
), two additional chip enables for easy depth
expansion (CE2,
CE2
), cycle start input (ADV/LD ),
synchronous clock enable (
CEN
), byte write enables
(
BW1
,
BW2
,
BW3
,
BW4
) and read/write (R/
W
).
Asynchronous inputs include the output enable (
OE
),
clock (CLK), SLEEP mode (ZZ, tied LOW if unused) and
burst mode (MODE). Burst Mode can provide either
interleaved or linear operation, burst operation can be
initiated by synchronous address Advance/Load
(ADV/LD ) pin in Low state. Subsequent burst address
can be internally generated by the chip and controlled by
the same input pin ADV/LD in High state.
Write cycles are internally self-time and synchronous
with the rising edge of the clock input and when R/
W
is
Low. The feature simplified the write interface. Individual
Byte enables allow individual bytes to be written.
BW1
controls I/Oa pins;
BW2
controls I/Ob pins;
BW3
controls I/Oc pins; and
BW4
controls I/Od pins. Cycle
types can only be defined when an address is loaded,
i.e., when ADV/LD is LOW. Parity/ECC bits are only
available on the X18/36 version.
The SRAM operates from a +3.3V power supply, and all
inputs and outputs are LVTTL-compatible. The device is
ideally suited for high bandwidth utilization systems.
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
2
AMIC Technology, Inc.
Pin Configuration
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
28
30
27
29
80
79
78
77
76
75
74
72
73
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
40
41
39
38
37
36
35
34
33
32
31
A16
A15
A14
A13
A12
A11
A10
NC
NC
VCC
VSS
NC
NC
A0
A1
A2
A3
A4
A5
MODE
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
256K X 18/16
A16
A15
A14
A13
A12
A11
A10
VCC
VSS
NC
A0
A1
A2
A3
A4
A5
MODE
128K X 36/32
I/Ob
8
/NC
I/Oa
0
/
NC
NC
NC
NC
A6
A7
CE2
NC
NC
VCC
VSS
CLK
NC
NC
A8
A9
A17
NC
NC
VCCQ
VSSQ
NC
VSSQ
VCCQ
VSS
VCC
VCC
ZZ
VCCQ
VSSQ
NC
NC
VSSQ
VCCQ
NC
NC
NC
I/Oa
8
/NC
I/Oa
7
NC
NC
NC
VCCQ
VSSQ
NC
NC
VSSQ
VCCQ
VCC
VCC
VSS
VCCQ
VSSQ
NC
VSSQ
VCCQ
NC
NC
NC
I/Ob
0
I/Ob
1
I/Ob
2
VCC
I/Ob
4
CE2
A7
A6
CLK
VSS
VCC
A9
A8
NC
NC
VCCQ
VSSQ
VSSQ
VCCQ
VSS
VCC
VCC
ZZ
VCCQ
VSSQ
VSSQ
VCCQ
I/Ob
7
CE
CE
BW4
BW3
BW2
BW2
BW1
BW1
CE2
CE2
CEN
CEN
OE
OE
ADV/
LD
ADV/
LD
A67L8316E
A67L8318E
A67L7332E
A67L7336E
R/W
R/W
I/Ob
3
I/Ob
5
I/Ob
6
I/Ob
7
I/Ob
8
/NC
VCCQ
VSSQ
VSSQ
VCCQ
VCC
VCC
VSS
VCCQ
VSSQ
VSSQ
VCCQ
VCC
I/Oc
0
/NC
I/Oc
1
I/Oc
2
I/Oc
3
I/Oc
4
I/Oc
5
I/Oc
6
I/Oc
7
I/Oc
8
I/Od
0
I/Od
1
I/Od
2
I/Od
3
I/Od
4
I/Od
5
I/Od
6
I/Od
7
I/Od
8
/NC
I/Oa
6
I/Oa
5
I/Oa
4
I/Oa
3
I/Oa
2
I/Oa
1
I/Oa
0
I/Ob
6
I/Ob
5
I/Ob
4
I/Ob
3
I/Ob
2
I/Ob
1
I/Ob
0
I/Oa
8
I/Oa
7
I/Oa
6
I/Oa
5
I/Oa
4
I/Oa
3
I/Oa
2
I/Oa
1
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
3
AMIC Technology, Inc.
Block Diagram (128K X 32/36)
128KX8/X9X4
MEMORY
ARRAY
MODE
LOGIC
CLK
LOGIC
ADDRESS
REGISTERS
BURST
LOGIC
ADDRESS
COUNTER
CLR
WRITE
REGISTRY
&
CONTROL
LOGIC
BYTEa
WRITE
DRIVER
BYTEb
WRITE
DRIVER
BYTEc
WRITE
DRIVER
BYTEd
WRITE
DRIVER
8/9
8/9
8/9
8/9
8/9
8/9
8/9
8/9
OUTPUT
REGISTERS
&
OUTPUT
BUFFERS
DATA-IN
REGISTERS
CHIP
ENABLE
LOGIC
PIPELINED
ENABLE
LOGIC
OUTPUT
ENABLE
LOGIC
ZZ
MODE
ADV/LD
CLK
A0-A16
R/W
BWE
BW1
BW2
BW3
BW4
CE
CE2
CE2
OE
CEN
WRITE
ADDRESS
REGISTER
WRITE
ADDRESS
REGISTER
ADV/LD
DATA-IN
REGISTERS
I/O
s
SENSE
AMPS
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
4
AMIC Technology, Inc.
Block Diagram (256K X 16/18)
DATA-IN
REGISTERS
MODE
LOGIC
CLK
LOGIC
ADDRESS
REGISTERS
BURST
LOGIC
ADDRESS
COUNTER
CLR
WRITE
REGISTRY
&
CONTROL
LOGIC
BYTEa
WRITE
DRIVER
BYTEb
WRITE
DRIVER
8/9
8/9
256KX8/X9X2
MEMORY
ARRAY
8/9
8/9
OUTPUT
REGISTERS
&
OUTPUT
BUFFERS
CHIP
ENABLE
LOGIC
PIPELINED
ENABLE
LOGIC
OUTPUT
ENABLE
LOGIC
ZZ
MODE
ADV/LD
CLK
A0-A17
R/W
BWE
BW1
BW2
CE
CE2
CE2
OE
CEN
WRITE
ADDRESS
REGISTER
WRITE
ADDRESS
REGISTER
ADV/LD
I/O
S
SENSE
AMPS
DATA-IN
REGISTERS
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
5
AMIC Technology, Inc.
Pin Description
Pin No.
Symbol
Description
LQFP (X16/X18)
LQFP (X32/X36)
37
36
35,34,33,32,
100,99,82,81,
44,45,46,47,
48,49,50
80
37
36
35,34,33,32,
100,99,82,81,
44,45,46,47,
48,49,50
A0
A1
A2 - A16
A17
Synchronous Address Inputs : These inputs are registered
and must meet the setup and hold times around the rising
edge of CLK. Pins 83 and 84 are reserved as address bits
for higher-density 9Mb and 18Mb DBA SRAMs, respectively.
A0 and A1 are the two lest significant bits (LSB) of the
address field and set the internal burst counter if burst is
desired.
93 (
BW1
)
94 (
BW2
)
93 (
BW1
)
94 (
BW2
)
95 (
BW3
)
96 (
BW4
)
BW1
BW2
BW3
BW4
Synchronous Byte Write Enables : These active low inputs
allow individual bytes to be written when a WRITE cycle is
active and must meet the setup and hold times around the
rising edge of CLK. BYTE WRITEs need to be asserted on
the same cycle as the address, BWs are associated with
addresses and apply to subsequent data.
BW1
controls I/Oa
pins;
BW2
controls I/Ob pins;
BW3
controls I/Oc pins;
BW4
controls I/Od pins.
89
89
CLK
Clock: This signal registers the address, data, chip enables,
byte write enables and burst control inputs on its rising
edge. All synchronous inputs must meet setup and hold
times around the clock are rising edge.
98
98
CE
Synchronous Chip Enable : This active low input is used to
enable the device. This input is sampled only when a new
external address is loaded (ADV/LD LOW).
92
92
CE2
Synchronous Chip Enable : This active low input is used to
enable the device and is sampled only when a new external
address is loaded (ADV/LD LOW). This input can be used
for memory depth expansion.
97
97
CE2
Synchronous Chip Enable : This active high input is used to
enable the device and is sampled only when a new external
address is loaded (ADV/LD LOW). This input can be used
for memory depth expansion.
86
86
OE
Output Enable : This active low asynchronous input enables
the data I/O output drivers.
85
85
ADV/LD
Synchronous Address Advance/Load : When HIGH, this
input is used to advance the internal burst counter,
controlling burst access after the external address is loaded.
When HIGH, R/
W
is ignored. A LOW on this pin permits a
new address to be loaded at CLK rising edge.
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
6
AMIC Technology, Inc.
Pin Description (continued)
Pin No.
Symbol
Description
LQFP (X16/X18)
LQFP (X32/X36)
87
87
CEN
Synchronous Clock Enable : This active low input permits
CLK to propagate throughout the device. When HIGH, the
device ignores the CLK input and effectively internally
extends the previous CLK cycle. This input must meet setup
and hold times around the rising edge of CLK.
64
64
ZZ
Snooze Enable : This active high asynchronous input
causes the device to enter a low-power standby mode in
which all data in the memory array is retained. When active,
all other inputs are ignored.
88
88
R/
W
Read/Write : This active input determines the cycle type
when ADV/LD is LOW. This is the only means for
determining READs and WRITEs. READ cycles may not be
converted into WRITEs (and vice versa) other than by
loading a new address. A LOW on this pin permits BYTE
WRITE operations and must meet the setup and hold times
around the rising edge of CLK. Full bus width WRITEs
occur if all byte write enables are LOW.
(a) 58, 59, 62, 63,
68, 69, 72, 73
(b) 8,9,12,13, 18,
19, 22,23
(a) 52, 53, 56, 57,
58, 59, 62, 63
(b) 68, 69, 72, 73,
74, 75, 78, 79
(c) 2, 3, 6, 7, 8, 9,
12, 13,
(d) 18, 19, 22, 23,
24, 25, 28, 29
I/Oa
I/Ob
I/Oc
I/Od
SRAM Data I/O : Byte "a" is I/Oa pins; Byte "b" is I/Ob pins;
Byte "c" is I/Oc pins; Byte "d" is I/Od pins. Input data must
meet setup and hold times around CLK rising edge.
74
24
51
80
1
30
NC/I/Oa
NC/I/Ob
NC/I/Oc
NC/I/Od
No Connect/Data Bits : On the X16/32 version, these pins
are no connect (NC) and can be left floating or connected to
GND to minimize thermal impedance. On the X18/36
version, these bits are I/Os.
31
31
MODE
Mode : This input selects the burst sequence. A LOW on
this pin selects linear burst. NC or HIGH on this pin selects
interleaved burst. Do not alter input state while device is
operating.
1, 2, 3, 6, 7, 25,
28, 29, 30, 38, 39,
42, 43, 51, 52, 53,
56, 57, 75, 78, 79,
83, 84, 95, 96
38,39,42,43
83,84
NC
No Connect : These pins can be left floating or connected to
GND to minimize thermal impedance.
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
7
AMIC Technology, Inc.
Pin Description (continued)
Pin No.
Symbol
Description
LQFP (X16/X18)
LQFP (X32/X36)
15, 41, 65, 91
15, 41, 65, 91
VCC
Power Supply : See DC Electrical Characteristics and
Operating Conditions for range.
14, 16, 66
14, 16, 66
VCC
These pins do not have to be connected directly to VCC as
long as the input voltage is
V
IH
. This input is not
connected to VCC bus internally.
4, 11, 20, 27,
54, 61, 70, 77
4, 11, 20, 27,
54, 61, 70, 77
VCCQ
Isolated Output Buffer Supply : See DC Electrical
Characteristics and Operating Conditions for range.
17, 40, 90
17, 40, 90
VSS
Ground : GND.
5,10,21,26,
55,60,71,76
5,10,21,26,
55,60,71,76
VSSQ
Isolated Output Buffer Ground
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
8
AMIC Technology, Inc.
Truth Table (Notes 5 - 7)
Operation
Address
Used
CE
CE2
CE2
ZZ
ADV/
LD
R/
W
BWx OE
CEN
CLK
I/O
Notes
Deselected Cycle,
Power-down
None
H
X
X
L
L
X
X
X
L
L
H
High-Z
Deselected Cycle,
Power-down
None
X
H
X
L
L
X
X
X
L
L
H
High-Z
Deselected Cycle,
Power-down
None
X
X
L
L
L
X
X
X
L
L
H
High-Z
Continue Deselect
Cycle
None
X
X
X
L
H
X
X
X
L
L
H
High-Z
1
READ Cycle
(Begin Burst)
External
L
L
H
L
L
H
X
L
L
L
H
Q
READ Cycle
(Continue Burst)
Next
X
X
X
L
H
X
X
L
L
L
H
Q
1,7
NOP/Dummy READ
(Begin Burst)
External
L
L
H
L
L
H
X
H
L
L
H
High-Z
2
Dummy READ
(Continue Burst)
Next
X
X
X
L
H
X
X
H
L
L
H
High-Z
1,2,7
WRITE Cycle
(Begin Burst)
External
L
L
H
L
L
L
L
X
L
L
H
D
3
WRITE Cycle
(Continue Burst)
Next
X
X
X
L
H
X
L
X
L
L
H
D
1,3,7
NOP/WRITE Abort
(Begin Burst)
None
L
L
H
L
L
L
H
X
L
L
H
High-Z
2,3
WRITE Abort
(Continue Burst)
Next
X
X
X
L
H
X
H
X
L
L
H
High-Z
1,2,3,7
IGNORE Clock Edge
(Stall)
Current
X
X
X
L
X
X
X
X
H
L
H
-
4
SLEEP Mode
None
X
X
X
H
X
X
X
X
X
X
High-Z
Notes:
1. Continue Burst cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or
WRITE) is chosen in the initial Begin Burst cycle. A Continue Deselect cycle can only be entered if a Deselect cycle is
executed first.
2. Dummy READ and WRITE Abort cycles can be considered NOPs because the device performs no operation. A WRITE
Abort means a WRITE command is given, but no operation is performed.
3. OE may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn off
the output drivers during a WRITE cycle. Some users may use OE when the bus turn-on and turn-off times do not
meet their requirements.
4. If an Ignore Clock Edge command occurs during a READ operation, the I/O bus will remain active (Low-Z). If it occurs
during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the Ignored Clock
Edge cycle.
5. X means "Don't Care." H means logic HIGH. L means logic LOW.
BWx
= H means all byte write signals
(
BW1
,
BW2
,
BW3
and
BW4
) are HIGH.
BWx
= L means one or more byte write signals are LOW.
6.
BW1
enables WRITEs to Byte "a" (I/Oa pins);
BW2
enables WRITEs to Byte "b" (I/Ob pins);
BW3
enables WRITEs to
Byte "c" (I/Oc pins);
BW4
enables WRITEs to Byte "d" (I/Od pins).
7. The address counter is incremented for all Continue Burst cycles.
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
9
AMIC Technology, Inc.
Partial Truth Table for READ/WRITE Commands (X16/X18)
Operation
R/
W
BW1
BW2
READ
H
X
X
WRITE Byte "a"
L
L
H
WRITE Byte "b"
L
H
L
WRITE all bytes
L
L
L
WRITE Abort/NOP
L
H
H
Note : Using and BYTE WRITE(s), any one or more bytes may be written.
Partial Truth Table for READ/WRITE Commands (X32/X36)
Operation
R/
W
BW1
BW2
BW3
BW4
READ
H
X
X
X
X
WRITE Byte "a"
L
L
H
H
H
WRITE Byte "b"
L
H
L
H
H
WRITE Byte "c"
L
H
H
L
H
WRITE Byte "d"
L
H
H
H
L
WRITE all bytes
L
L
L
L
L
WRITE Abort/NOP
L
H
H
H
H
Note : Using R/
W
and BYTE WRITE(s), any one or more bytes may be written.
Linear Burst Address Table (MODE = LOW)
First Address (External)
Second Address (Internal)
Third Address (Internal)
Fourth Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
Interleaved Burst Address Table (MODE = HIGH or NC)
First Address (External)
Second Address (Internal)
Third Address (Internal)
Fourth Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
10
AMIC Technology, Inc.
Absolute Maximum Ratings*
Power Supply Voltage (VCC) . . . . . . . . . . -0.5V to +4.6V
Voltage Relative to GND for any Pin Except VCC (Vin,
Vout) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VCC
+0.5V
Operating Temperature (Topr) . . . . . . . . . . . 0
C to 70
C
Storage Temperature (Tbias) . . . . . . . . . . -10
C to 85
C
Storage Temperature (Tstg) . . . . . . . . . . -55
C to 125
C
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics and Operating Conditions
(0
C
T
A
70
C, VCC, VCCQ = +3.3V
5% unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Max.
Unit
Note
V
IH
Input High Voltage
2.0
VCC+0.3
V
1,2
V
IL
Input Low Voltage
-0.3
0.8
V
1,2
IL
I
Input Leakage Current
0V
V
IH
VCC
-1.0
1.0
A
3
IL
O
Output Leakage Current
Output(s) disabled,
0V
V
IN
VCC
-1.0
1.0
A
V
OH
Output High Voltage
I
OH
= -4.0mA
2.4
V
1,4
V
OL
Output Low Voltage
I
OL
= 8.0mA
0.4
V
1,4
VCC
Supply Voltage
3.135
3.465
V
1
VCCQ
Isolated Output Buffer Supply
3.135
VCC
V
1,5
Capacitance
Symbol
Parameter
Conditions
Typ.
Max.
Unit
Note
C
I
Control Input Capacitance
3
4
pF
6
C
O
Input/Output Capacitance (I/O)
4
5
pF
6
C
A
Address Capacitance
T
A
= 25
C; f = 1MHz
VCC = 3.3V
3
3.5
pF
6
Note : 1. All voltages referenced to VSS (GND).
2. Overshoot :
V
IH
+4.6V for t
t
KHKH
/2 for I
20mA
Undershoot : V
IL
-0.7V for t
t
KHKH
/2 for I
20mA
Power-up :
V
IH
+3.456V and VCC
3.135V for t
200ms
3. MODE pin has an internal pull-up and exhibits an input leakage current of
10
A.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values.
AC I/O curves are available upon request.
5. VCC and VCCQ can be externally wired together to the same power supply.
6. This parameter is sampled.
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
11
AMIC Technology, Inc.
I
CC
Operating Condition and Maximum Limits
Max.
Symbol
Parameter
-4.5
-5
-6
Unit
Conditions
I
CC
Power Supply Current : Operating
300
250
230
mA
Device selected; All inputs
V
IL
or
V
IH
; Cycle time
t
KC
(MIN);
VCC = MAX; Outputs open
I
CC1
Power Supply Current : Idle
12
10
8
mA
Device selected; VCC = MAX;
CEN
V
IH
;
All inputs
VSS+0.2 or
VCC-0.2;
Cycle time
t
KC
(MIN)
I
SB2
CMOS Standby
10
10
10
mA
Device deselected; VCC = MAX;
All inputs
VSS+0.2 or
VCC-0.2;
All inputs static; CLK frequency=0
I
SB3
TTL Standby
25
25
25
mA
Device deselected; VCC = MAX;
All inputs
V
IL
; or
V
IH
;
All inputs static; CLK frequency=0
I
SB4
Clock Running
65
60
60
mA
Device deselected; VCC = MAX;
All inputs
VSS+0.2 or
VCC-0.2;
Cycle time
t
KC
(MIN)
I
SB2Z
SLEEP Mode
10
10
10
mA
ZZ
V
IH
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
12
AMIC Technology, Inc.
AC Characteristics
(Note 4)
(0
C
T
A
70
C, VCC = 3.3V
5%)
-4.5
-5
-6
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
Clock
t
KHKH
Clock cycle time
8.5
-
10
-
12
-
ns
t
KF
Clock frequency
-
117
-
100
-
83
MHz
t
KHKL
Clock HIGH time
3.4
-
3.5
-
4.0
-
ns
t
KLKH
Clock LOW time
3.4
-
3.5
-
4.0
-
ns
Output Times
t
KHQV
Clock to output valid
-
4.5
-
5.0
-
6.0
ns
t
KHQX
Clock to output invalid
1.5
-
1.5
-
1.5
-
ns
t
KHQX1
Clock to output in Low-Z
1.5
-
1.5
-
1.5
-
ns
1,2,3
t
KHQZ
Clock to output in High-Z
1.5
4.5
1.5
5.0
1.5
6.0
ns
1,2,3
t
GLQV
OE
to output valid
-
4.5
-
5.0
-
6.0
ns
4
t
GLQX
OE
to output in Low-Z
0
-
0
-
0
-
ns
1,2,3
t
GHQZ
OE
to output in High-Z
-
4.5
-
5.0
-
6.0
ns
1,2,3
Setup Times
t
AVKH
Address
2.0
-
2.2
-
2.5
-
ns
5
t
EVKH
Clock enable (
CEN
)
2.0
-
2.2
-
2.5
-
ns
5
t
CVKH
Control signals
2.0
-
2.2
-
2.5
-
ns
5
t
DVKH
Data-in
1.7
-
2.0
-
2.5
-
ns
5
Hold Times
t
KHAX
Address
0.5
-
0.5
-
1.0
-
ns
5
t
KHEX
Clock enable (
CEN
)
0.5
-
0.5
-
1.0
-
ns
5
t
KHCX
Control signals
0.5
-
0.5
-
1.0
-
ns
5
t
KHDX
Data-in
0.5
-
0.5
-
1.0
-
ns
5
Notes: 1. This parameter is sampled.
2. Output loading is specified with C1=5pF as in Figure 2.
3. Transition is measured
200mV from steady state voltage.
4. OE can be considered a "Don't Care" during WRITE; however, controlling OE can help fine-tune a system for
turnaround timing.
5. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of
CLK when ADV/LD is LOW and chip enabled. All other synchronous inputs meet the setup and hold times with
stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each
rising edge of CLK (when ADV/LD is LOW) to remain enabled.
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
13
AMIC Technology, Inc.
AC Test Conditions
Input Pulse Levels
GND to 3V
Input Rise and Fall Times
1.5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
See Figures 1 and 2
351
Q
+3.3V
317
5pF
Z
O
=50
Q
50
V
T
=1.5V
Figure 1
Output Load Equivalent
Figure 2
Output Load Equivalent
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
14
AMIC Technology, Inc.
SLEEP Mode
SLEEP Mode is a low current "Power-down" mode in
which the device is deselected and current is reduced to
I
SB2Z
. This duration of SLEEP Mode is dictated by the
length of time the ZZ is in a HIGH state. After entering
SLEEP Mode, all inputs except ZZ become disabled and
all outputs go to High-Z.
The ZZ pin is asynchronous, active high input that causes
the device to enter SLEEP Mode. When the ZZ pin
SLEEP Mode Electrical Characteristics
becomes logic HIGH, ISB2Z is guaranteed after the time
t
ZZI
is met, Any operation pending when entering SLEEP
Mode is not guaranteed to successfully complete.
Therefore, SLEEP Mode (READ or WRITE) must not be
initiated until valid pending operations are completed.
Similarly, when exiting SLEEP Mode during t
RZZ
, only a
DESELECT or READ cycle should be given while the
SRAM is transitioning out of SLEEP Mode.
(VCC, VCCQ = +3.3V
5%)
Symbol
Parameter
Conditions
Min.
Max.
Unit
Note
I
SB2Z
Current during SLEEP Mode
ZZ
V
IH
-
10
mA
t
ZZ
ZZ active to input ignored
0
2(t
KHKH
)
ns
1
t
RZZ
ZZ inactive to input sampled
0
2(t
KHKH
)
ns
1
t
ZZI
ZZ active to snooze current
-
2(t
KHKH
)
ns
1
t
RZZI
ZZ inactive to exit snooze current
0
ns
1
Note : 1. This parameter is sampled.
SLEEP Mode Waveform
t
RZZ
t
ZZ
t
ZZI
I
ISB2Z
High-Z
DESELECT or READ Only
Output
(Q)
ALL INPUTS
(except ZZ)
I
SUPPLY
ZZ
CLK
: Don't Care
t
RZZI
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
15
AMIC Technology, Inc.
READ/WRITE Timing
Note :
1. For this waveform, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BRST operations are optional.
3.
CE
represents three signals. When
CE
= 0, it represents
CE
= 0,
CE2
= 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated the most current data is used. The
most recent data may be from the input data register.
A3
A2
A1
A4
A5
D(A1)
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
: Don't Care
: Undefined
1
2
3
4
5
t
GLQX
t
KHKH
6
7
8
9
10
CLK
CEN
CE
ADV/
LD
R/W
BWx
ADDRESS
I/O
COMMAND
A6
A7
D(A2)
D(A2+1)
Q(A6)
D(A5)
Q(A4+1)
Q(A4)
Q(A3)
OE
t
KLKH
t
EVKH
t
KHEX
t
KHKL
t
KHCX
t
CVKH
t
KHAX
t
AVKH
t
KHDX
t
DVKH
t
KHQZ
t
GLQV
t
KHQX
t
GHQZ
t
KHQX
t
KHQV
t
KHQX1
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
16
AMIC Technology, Inc.
NOP, STALL and Deselect Cycles
Note :
1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates
CEN
being used to create a "pause." A WRITE
is not performed during this cycle.
2. For this waveform, ZZ and
OE
are tied LOW.
3.
CE
represents three signals. When
CE
= 0, it represents
CE
= 0,
2
CE
= 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The
most recent data may be from the input data register.
A3
A2
A1
A4
A5
Q(A5)
D(A4)
Q(A3)
Q(A2)
D(A1)
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
: Don't Care
: Undefined
1
2
3
4
5
t
KHQX
t
KHQZ
6
7
8
9
10
CLK
CEN
CE
ADV/
LD
R/W
BWx
ADDRESS
I/O
COMMAND
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
17
AMIC Technology, Inc.
Ordering Information
Part No.
Configure
Cycle Time / Access Time
Package
A67L8316E-4.5
8.5ns / 4.5ns
A67L8316E-5
10ns / 5ns
A67L8316E-6
256K X 16
12ns / 6ns
100L LQFP
A67L8318E-4.5
8.5ns / 4.5ns
A67L8318E-5
10ns / 5ns
A67L8318E-6
256K X 18
12ns / 6ns
100L LQFP
A67L7332E-4.5
8.5ns / 4.5ns
A67L7332E-5
10ns / 5ns
A67L7332E-6
128K X 32
12ns / 6ns
100L LQFP
A67L7336E-4.5
8.5ns / 4.5ns
A67L7336E-5
10ns / 5ns
A67L7336E-6
128K X 36
12ns / 6ns
100L LQFP
A67L8316/A67L8318/
A67L7332/A67L7336 Series
PRELIMINARY (December, 1999, Version 0.1)
18
AMIC Technology, Inc.
Package Information
LQFP 100L Outline Dimensions
unit: inches/mm
Symbol
Dimensions in inches
Dimensions in mm
Min.
Nom.
Max.
Min.
Nom.
Max.
A
1
0.002
-
-
0.05
-
-
A
2
0.053
0.055
0.057
1.35
1.40
1.45
b
0.011
0.013
0.015
0.27
0.32
0.37
c
0.005
-
0.008
0.12
-
0.20
H
E
0.860
0.866
0.872
21.85
22.00
22.15
E
0.783
0.787
0.791
19.90
20.00
20.10
H
D
0.624
0.630
0.636
15.85
16.00
16.15
D
0.547
0.551
0.555
13.90
14.00
14.10
e
0.026 BSC
0.65 BSC
L
0.018
0.024
0.030
0.45
0.60
0.75
L
1
0.039 REF
1.00 REF
y
-
-
0.004
-
-
0.1
0
3.5
7
0
3.5
7
Notes:
1. Dimensions D and E do not include mold protrusion.
2. Dimensions b does not include dambar protrusion.
Total in excess of the b dimension at maximum material condition.
Dambar cannot be located on the lower radius of the foot.
31
50
51
80
81
100
H
D
D
E
H
E
1
30
b
D
y
A
1
A
2
L
1
c
e
L