AF4362N
N-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/5
Features
- Simple Drive Requirement
- Low On-resistance
- Fast Switching
Product Summary
BV
DSS
(V)
R
DS(ON)
(m)
I
D
(A)
30 6 18
Pin Assignments
SO-8
5
6
7
8
4
3
2
1
D
D
D
D
S
S
S
G
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Descriptions
Pin Name
Description
S Source
G Gate
D Drain
Ordering information
A X 4362N X X X
PN
Package
Feature
F :MOSFET
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF4362N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
30
V
V
GS
Gate-Source
Voltage
12
V
T
A
=25C 18
I
D
Continuous Drain Current
(Note 1)
T
A
=70C 15
A
I
DM
Pulsed
Drain
Current
(Note 2)
80
A
Total Power Dissipation
2.5
W
P
D
Linear Derating Factor
T
A
=25C
0.02 W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb Thermal
Resistance
Junction-ambient
(Note 1)
Max.
50 C/W
Electrical Characteristics
at T
J
=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source
Breakdown
Voltage V
GS
=0V, I
D
=250uA 30
- - V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25
o
C,
I
D
=1mA
- 0.01 - V/
o
C
V
GS
=10V, I
D
=18A -
-
5
V
GS
=4.5V, I
D
=12A -
-
6
R
DS(ON)
Static Drain-Source
On-Resistance
(Note 3)
V
GS
=2.5V, I
D
=6A
8
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA - -
1.2
V
g
fs
Forward
Transconductance V
DS
=10V, I
D
=12A -
47
-
S
Drain-Source Leakage Current
(T
J
=25
o
C)
V
DS
=30V, V
GS
=0V -
-
1
I
DSS
Drain-Source Leakage Current
(T
J
=70
o
C)
V
DS
=24V, V
GS
=0V -
-
25
uA
I
GSS
Gate-Source
Leakage
V
GS
=12V -
-
100
nA
Q
g
Total
Gate
Charge
(Note 3)
-
59
95
Q
gs
Gate-Source
Charge
- 10 -
Q
gd
Gate-Drain
("Miller")
Charge
I
D
=18A,
V
DS
=24V,
V
GS
=4.5V
- 23 -
nC
t
d(on)
Turn-On Delay Time
(Note 3)
-
16
-
t
r
Rise
Time
- 12 -
t
d(off)
Turn-Off Delay Time
-
96
-
t
f
Fall-Time
V
DS
=15V,
I
D
=1A,
R
G
=3.3, V
GS
=10V
R
D
=15
- 30 -
ns
C
iss
Input
Capacitance
- 5080
8100
C
oss
Output
Capacitance
- 660 -
C
rss
Reverse
Transfer
Capacitance
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
- 400 -
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
Forward On Voltage
(Note 3)
I
S
=18A, V
GS
=0V -
-
1.2
V
t
rr
Reverse
Recovery
Time
- 43 - ns
Q
rr
Reverse Recovery Charge
I
S
=18A, V
GS
=0V,
dl/dt=100A/s
- 39 - nC
Note 1: Surface mounted on 1 in
2
copper pad of FR4 board; 125
o
C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width 300us, duty cycle 2%.
AF4362N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
3/5
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AF4362N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
4/5
Typical Performance Characteristics (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AF4362N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
5/5
Marking Information
SO-8
( Top View )
1
8
4 3 6 2 N
AA Y W X
Year code:
Part Number
Lot code:
Week code:
Factory code
"A~Z": 01~26;
"A~Z": 27~52
"4" =2004
~
"A~Z": 01~26;
"A~Z": 27~52
"X": Non-Lead Free; "X": Lead Free
Logo
Package Information
Package Type: SO-8
L
C
DETAIL A
E
E1
A
A1
D
8
7
6
5
1
2
3
4
e
B
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Dimensions In Millimeters
Symbol
Min.
Nom.
Max.
A
1.35 1.55 1.75
A1 0.10 0.18 0.25
B
0.33 0.41 0.51
C
0.19 0.22 0.25
D
4.80 4.90 5.00
E
5.80 6.15 6.50
E1 3.80 3.90 4.00
L
0.38 0.71 1.27
0
o
4
o
8
o
e 1.27
TYP.
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