AF70N02
N-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/6
Features
-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-Pb Free Plating Product
Product Summary
BV
DSS
(V)
R
DS(ON)
(m)
I
D
(A)
25 9 66
Pin Assignments
3
2
1
S
D
G
(Front View)
General Description
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Descriptions
Pin Name
Description
S Source
G Gate
D Drain
Ordering information
A X 70N02 X X
PN
Package
Feature
F :MOSFET
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
S
G
D
AF70N02
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
2/6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
25
V
V
GS
Gate-Source
Voltage
20
V
T
C
=25C 66
I
D
Continuous
Drain
Current,
V
GS
=10V
T
C
=100C 42
A
I
DM
Pulsed Drain Current
(Note 1)
210
A
Total Power Dissipation
T
C
=25C 66
W
P
D
Linear Derating Factor
0.53
W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
R
JC
Thermal
Resistance
Junction-Case
Max.
1.9
C/W
R
JA
Thermal
Resistance
Junction-
Ambient
Max.
110
C/W
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
Drain-Source
Breakdown
Voltage
V
GS
=0V, I
D
=250uA 25
- - V
BV
DSS
/T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
I
D
=1mA
- 0.037 - V/C
V
GS
=10V, I
D
=33A -
-
9
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
=4.5V, I
D
=20A -
-
18
m
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=250uA 1 - 3 V
g
fs
Forward
Transconductance V
DS
=10V, I
D
=33A -
28
-
S
Drain-Source Leakage
Current(T
J
=25C)
V
DS
=25V, V
GS
=0V -
-
1
I
DSS
Drain-Source Leakage
Current(T
J
=150C)
V
DS
=20V, V
GS
=0V -
-
25
uA
I
GSS
Gate Source Leakage
V
GS
=20V -
-
100
nA
Q
g
Total
Gate
Charge
(Note 2)
-
23
-
Q
gs
Gate-Source
Charge
- 3 -
Q
gd
Gate-Drain
("Miller")
Charge
I
D
=33A
V
DS
=20V
V
GS
=5V
- 17 -
nC
t
d(on)
Turn-On Delay Time
(Note 2)
-
8.8
-
t
r
Rise
Time
- 95 -
t
d(off)
Turn-Off Delay Time
-
24
-
t
f
Fall-Time
V
DS
=15V
I
D
=33A
R
G
=3.3, V
GS
=10V
R
D
=0.45
- 14 -
nS
C
iss
Input
Capacitance
- 790 -
C
oss
Output
Capacitance
- 475 -
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=25V,
f=1.0MHz
- 195 -
pF
Source-Drain Diode
Sym.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S
Continuous Source Current (Body Diode) V
D
=V
G
=0V, V
S
=1.26V - - 66 A
I
SM
Pulsed Source Current (Body Diode)
(Note 1)
-
-
210
A
V
SD
Forward On Voltage
(Note 2)
T
J
=25C, I
S
=66A,
V
GS
=0V
- -
1.26
V
AF70N02
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
3/6
Drain-Source Avalanche Ratings
Sym.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
E
AS
Single Pulse Avalanche Energy
(Note 2)
-
-
61
mJ
I
AR
Avalanche
Current
V
DD
=25V, I
D
=35A,
L=100uH, V
GS
=10V
- - 35 A
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Typical Performance Characteristics
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AF70N02
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
4/6
Typical Performance Characteristics (Continued)
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
AF70N02
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
5/6
Typical Performance Characteristics (Continued)
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
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