AF70N03
N-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/5
Features
-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-RoHS Compliant
-Pb Free Plating Product
Product Summary
BV
DSS
(V)
R
DS(ON)
(m)
I
D
(A)
30 9 60
Pin Assignments
3
2
1
S
D
G
(Front View)
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Descriptions
Pin Name
Description
S Source
G Gate
D Drain
Ordering information
A X 70N03 X X
PN
Package
Feature
F :MOSFET
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
S
G
D
AF70N03
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
30
V
V
GS
Gate-Source
Voltage
20
V
T
A
=25C 60
I
D
Continuous
Drain
Current,
V
GS
=10V
T
A
=100C 43
A
I
DM
Pulsed Drain Current
(Note 1)
195
A
Total Power Dissipation
T
A
=25C 53
W
P
D
Linear Derating Factor
0.36
W/C
T
STG
Storage Temperature Range
-55 to 175
C
T
J
Operating Junction Temperature Range
-55 to 175
C
Thermal Data
Symbol
Parameter
Maximum
Units
R
JC
Thermal
Resistance
Junction-Case
Max.
2.8
C/W
R
JA
Thermal
Resistance
Junction-
Ambient
Max.
110
C/W
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
Drain-Source
Breakdown
Voltage
V
GS
=0V, I
D
=250uA 30
- - V
BV
DSS
/T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
I
D
=1mA
- 0.032 - V/C
V
GS
=10V, I
D
=33A -
-
9
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
=4.5V, I
D
=20A -
-
18
m
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=250uA 1 - 3 V
g
fs
Forward
Transconductance V
DS
=10V, I
D
=33A -
35
-
S
Drain-Source Leakage
Current(T
J
=25C)
V
DS
=30V, V
GS
=0V -
-
1
I
DSS
Drain-Source Leakage
Current(T
J
=175C)
V
DS
=24V, V
GS
=0V -
-
250
uA
I
GSS
Gate Source Leakage
V
GS
=20V -
-
100
nA
Q
g
Total
Gate
Charge
(Note 2)
- 16.5 -
Q
gs
Gate-Source
Charge
- 5 -
Q
gd
Gate-Drain
("Miller")
Charge
I
D
=33A
V
DS
=20V
V
GS
=4.5V
- 10.3 -
nC
t
d(on)
Turn-On Delay Time
(Note 2)
-
8.2
-
t
r
Rise
Time
-
105
-
t
d(off)
Turn-Off Delay Time
-
21.4
-
t
f
Fall-Time
V
DS
=15V
I
D
=33A
R
G
=3.3, V
GS
=10V
R
D
=0.45
- 8.5 -
nS
C
iss
Input
Capacitance
- 1485 -
C
oss
Output
Capacitance
- 245 -
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=25V,
f=1.0MHz
- 170 -
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S
Continuous Source Current (Body
Diode)
V
D
=V
G
=0V, V
S
=1.3V - - 60 A
I
SM
Pulsed Source Current (Body Diode)
(Note 1)
-
-
195
A
V
SD
Forward On Voltage
(Note 2)
T
J
=25C, I
S
=60A,
V
GS
=0V
- - 1.3
V
AF70N03
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
3/5
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Typical Performance Characteristics
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AF70N03
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
4/5
Typical Performance Characteristics
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AF70N03
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
5/5
Marking Information
TO-252
Logo
Part Number
YY : Year
WW: Nth week
X : Internal code ( Optional)
( Top View)
70N03
YYWWX
Package Information
Package Type: TO-252
D1
D
E2
E1
F
(0.1mm)
C
A2
F1
e
e
B1
A3
R: 0.127~0.381
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
E3
Dimensions In Millimeters
Symbol
Min.
Nom.
Max.
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D
6.00 6.50 7.00
D1 4.80 5.35 5.90
F
2.20 2.63 3.05
F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.70
E3 3.50 4.00 4.50
e
- 2.30 -
C
0.35 0.50 0.65
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