AF9412N
N-Channel 30-V (D-S) MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 15, 2004
1/5
Features
-Low r
DS(on)
Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
Product Summary
V
DS
(V)
r
DS(on)
(m)
I
D
(A)
22@V
GS
=10V
9.0
30
36@V
GS
=4.5V
7.0
Pin Assignments
SOP-8
5
6
7
8
4
3
2
1
D
D
D
D
S
S
S
G
General Description
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for using in the power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery chargers, telecommunication power
systems, and telephone power systems.
Pin Descriptions
Pin Name
Description
S Source
G Gate
D Drain
Ordering information
A X 9412N X X X
PN
Package
Feature
F :MOSFET
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF9412N
N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
2/5
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
30
V
V
GS
Gate-Source
Voltage
20
V
T
A
=25C 9.4
I
D
Continuous
Drain
Current
(Note 1)
T
A
=70C 7.4
A
I
DM
Pulsed Drain Current
(Note 2)
30
A
I
S
Continuous Source Current (Diode Conduction)
(Note 1)
1.6
A
T
A
=25C 3.1
P
D
Power
Dissipation
(Note 1)
T
A
=70C 2.2
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R
JC
Maximum
Junction-to-Case
(Note 1)
t
5 sec
25
R
JA
Maximum
Junction-to-Ambient
(Note 1)
t
5 sec
40
C/W
Note 1: surface Mounted on 1"x 1" FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications
(T
A
=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
(BR)DSS
Drain-Source
Breakdown
Voltage V
GS
=0V, I
D
=250uA 30
-
-
V
V
GS(th)
Gate-Threshold
Voltage
V
DS
=V
GS
, I
D
=250uA 1
1.95
3.0
V
I
GSS
Gate-Body
Leakage
V
DS
=0V, V
GS
=20V -
-
100
nA
V
DS
=24V, V
GS
=0V -
-
1
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V, T
J
=55C - - 25
uA
I
D(on)
On-State
Drain
Current
(Note 3)
V
DS
=5V, V
GS
=10V 20
-
-
A
V
GS
=10V, I
D
=9.2A -
17
22
V
GS
=4.5V, I
D
=8A -
29
36
r
DS(on)
Drain-Source On-Resistance
(Note 3)
V
GS
=10V, I
D
=9.2A, T
J
=55C - 20
27
m
g
fs
Forward Transconductance
(Note 3)
V
DS
=15V, I
D
=9.2A -
40
-
S
V
SD
Diode
Forward
Voltage
I
S
=2.3A, V
GS
=0V -
0.7
1.1
V
Dynamic
(Note 4)
Q
g
Total Gate Charge
-
4.7
8
Q
gs
Gate-Source
Charge
-
1.7
-
Q
gd
Gate-Drain
Charge
V
DS
=15V, V
GS
=4.5V,
I
D
=7A
- 1.4 -
nC
Switching
t
d(on)
Turn-On Delay Time
-
16
21
t
r
Rise
Time
- 5 10
t
d(off)
Turn-Off
Delay
Time
-
23 37
t
f
Fall-Time
V
DD
=25V, R
L
=25, I
D
=1A,
V
GEN
=10V
- 3 6
nS
t
rr
Source-Drain Reverse Recovery
Time
I
F
=2.3A, Di/Dt=100A/uS
-
41
80
nS
Note 3: Pulse test: PW 300us duty cycle 2%.
Note 4: Guaranteed by design, not subject to production testing.
AF9412N
N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
3/5
Typical Performance Characteristics
AF9412N
N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
4/5
Typical Performance Characteristics (Continued)
AF9412N
N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
5/5
Marking Information
SOP-8L
( Top View )
1
8
9 4 1 2 N
AA Y W X
Year code:
Part Number
Lot code:
Week code:
Factory code
"A~Z": 01~26;
"A~Z": 27~52
"4" =2004
~
"A~Z": 01~26;
"A~Z": 27~52
"X": Non-Lead Free; "X": Lead Free
Logo
Package Information
Package Type: SOP-8L
VIEW "A"
L
C
VIEW "A"
H
E
A
A2
A1
B
e
D
7 (4X)
0.015x45
7 (4X)
y
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Nom.
Max.
Min.
Nom.
Max.
A 1.40 1.60 1.75 0.055 0.063 0.069
A1
0.10 - 0.25
0.040 - 0.100
A2 1.30 1.45 1.50 0.051 0.057 0.059
B 0.33 0.41 0.51 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075
0.008
0.010
D 4.80 5.05 5.30 0.189 0.199 0.209
E 3.70 3.90 4.10 0.146 0.154 0.161
e - 1.27 - - 0.050 -
H 5.79 5.99 6.20 0.228 0.236 0.244
L 0.38 0.71 1.27 0.015 0.028 0.050
y - - 0.10 - - 0.004
0
O
- 8
O
0
O
- 8
O
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