AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
Features
- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product
Product Summary
CH
BV
DSS
(V)
R
DS(ON)
(m)
I
D
(A)
N 35
48 4.3
P -35
72 -3.6
Pin Assignments
SO-8
5
6
7
8
4
3
2
1
P1G
P1S/P2S
N2D/P2D
P2G
N1G
N1D/P1D
N1S/N2S
N2G
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Descriptions
Pin Name
Description
N1G Gate
(NMOS1)
N1D/P1D
Drain(NMOS1) / Drain(PMOS1)
N1S/N2S
Source(NMOS1) / Source(NMOS2)
N2G Gate
(NMOS2)
P2G Gate
(PMOS2)
N2D/P2D
Drain(NMOS2) / Drain(PMOS2)
P1S/P2S Source(PMOS1)
/
Source(PMOS2)
P1G Gate
(PMOS1)
Ordering information
A X 9903M X X
PN
Package
Feature
F :MOSFET
S: SO-8
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
P1S
P2S
N1S
N2S
N2G
N1G
P1G
P2G
P1N1D
P2N2D
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Seo 22, 2005
2/8
Absolute Maximum Ratings
Symbol
Parameter
N-Channel P-Channel
Units
V
DS
Drain-Source
Voltage
35
-35
V
GS
Gate-Source
Voltage
20
20
V
T
A
=25C
4.3 -3.6
I
D
Continuous
Drain
Current
(Note 1)
T
A
=70C
3.4 -2.8
A
I
DM
Pulsed Drain Current
(Note 2)
20
-20
A
Total Power Dissipation
T
A
=25C
1.38 W
P
D
Linear Derating Factor
0.01
W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Value
Units
R
JA
Thermal
Resistance
Junction-Ambient
(Note 1)
Max.
90
C/W
Electrical Characteristics
(T
J
=25C unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
V
GS
=0V, I
D
=250uA N 35 - -
BV
DSS
Drain-Source breakdown Voltage
V
GS
=0V, I
D
=-250uA P -35 - -
V
Reference to 25 C,
I
D
=1mA
N -
0.03
-
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25 C,
I
D
=-1mA
P - -0.02 -
V/C
V
GS
=10V, I
D
=4A -
-
48
V
GS
=4.5V, I
D
=3A
N
- - 70
V
GS
=-10V, I
D
=-3A -
-
72
R
DS(ON)
Static Drain-Source
On-Resistance
(Note 3)
V
GS
=-4.5V, I
D
=-2A
P
- -
100
m
V
DS
= V
GS
, I
D
=250uA N 1 - 3
V
GS(th)
Gate-Threshold
Voltage
V
DS
= V
GS
, I
D
=-250uA
P -1 - -3
V
V
DS
=10V, I
D
=4A N
-
8
-
g
fs
Forward
Transconductance
V
DS
=-10V, I
D
=-3A P - 6 -
S
T
J
=25C V
DS
=30V, V
GS
=0V -
-
1
T
J
=70C V
DS
=24V, V
GS
=0V
N
- - 25
T
J
=25C V
DS
=-30V, V
GS
=0V -
-
-1
I
DSS
Drain-Source Leakage
Current
T
J
=70C V
DS
=-24V, V
GS
=0V
P
- -
-25
uA
N - -
100
I
GSS
Gate-Source
Leakage
V
GS
=
20V
P - -
100
nA
N - 6 10
Q
g
Total
Gate
Charge
(Note 3)
P - 6 10
N - 2 -
Q
gs
Gate-Source
Charge
P - 1 -
N - 3 -
Q
gd
Gate-Drain ("Miller") Charge
N-Channel
V
DS
=28V, V
GS
=4.5V
I
D
=4A
P-Channel
V
DS
=-28V, V
GS
=-4.5V
I
D
=-3A
P - 3 -
nC
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Seo 22, 2005
3/8
Electrical Characteristics
(T
J
=25C unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
N - 6 -
t
d(on)
Turn-On Delay Time
(Note 3)
P - 7 -
N - 5 -
t
r
Rise
Time
P - 5 -
N - 14 -
t
d(off)
Turn-Off
Delay
Time
P - 19 -
N - 4 -
t
f
Fall-Time
N-Channel
V
DS
=15V, V
GS
=10V
I
D
=1A, R
G
=3.3,
R
D
=15
P-Channel
V
DS
=-15V, V
GS
=-10V
I
D
=-1A, R
G
=3.3,
R
D
=15
P - 4 -
ns
N - 490
780
C
iss
Input
Capacitance
P - 420
1100
N - 130 -
C
oss
Output
Capacitance
P - 140 -
N - 55 -
C
rss
Reverse Transfer Capacitance
N-Channel
V
GS
=0V, V
DS
=25V
f=1.0MHz
P-Channel
V
GS
=0V, V
DS
=-25V
f=1.0MHz
P - 65 -
pF
Source-Drain Diode
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
I
S
=1.2A, V
GS
=0V N
-
-
1.2
V
SD
Forward On Voltage
(Note 3)
I
S
=-1.2A, V
GS
=0V P
- -
-1.2
V
N - 18 -
t
rr
Reverse Recovery Time
P - 20 -
ns
N - 11 -
Q
rr
Reverse Recovery Charge
N-Channel
I
S
=4A, V
GS
=0V
dl/dt=100A/s
P-Channel
I
S
=-3A, V
GS
=0V
dl/dt=-100A/s
P - 16 -
nC
Note 1: Surface Mounted on 1 in
2
copper pad of FR4 board; t
10sec; 186C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature
Note 3: Pulse width < 300us, duty cycle < 2%.
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Seo 22, 2005
4/8
Typical Performance Characteristics (N-Channel)
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Seo 22, 2005
5/8
Typical Performance Characteristics (N-Channel) (Continued)
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