AF9926N
N-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/6
Features
- Capable of 2.5V Gate Drive
- Low On-resistance
- Low Drive Current
- Surface Mount Package
Product Summary
BV
DSS
(V)
R
DS(ON)
(m)
I
D
(A)
20 30 6
Pin Assignments
SO-8
5
6
7
8
4
3
2
1
D1
D1
D2
D2
S1
G1
S2
G2
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Pin Descriptions
Pin Name
Description
S1/2 Source
G1/2 Gate
D1/2 Drain
Ordering information
A X 9926N X X X
PN
Package
Feature
F :MOSFET
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF9926N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
2/6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
20
V
V
GS
Gate-Source
Voltage
12
V
T
A
=25C 6
I
D
Continuous
Drain
Current
(Note 1)
T
A
=70C 4.8
A
I
DM
Pulsed
Drain
Current
(Note 2)
26
A
Total Power Dissipation
2
W
P
D
Linear Derating Factor
T
A
=25C
0.016 W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb Thermal
Resistance
Junction-ambient
(Note 1)
Max. 62.5
C/W
Electrical Characteristics
at T
J
=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source
Breakdown
Voltage
V
GS
=0V, I
D
=250uA 20 - - V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25
o
C,
I
D
=1mA
- 0.03 - V/
o
C
V
GS
=4.5V, I
D
=6A - -
30
R
DS(ON)
Static Drain-Source On-Resistance
(Note 3)
V
GS
=2.5V, I
D
=5.2A 45
m
V
GS(th)
Gate
Threshold
Voltage
V
DS
=V
GS
, I
D
=250uA
- - 1.2
V
g
fs
Forward
Transconductance
V
DS
=10V, I
D
=6A - 20 - S
Drain-Source Leakage Current
(T
J
=25
o
C)
V
DS
=20V, V
GS
=0V - - 25
I
DSS
Drain-Source Leakage Current
(T
J
=70
o
C)
V
DS
=20V, V
GS
=0V - - 250
uA
Gate-Source Forward Leakage
V
GS
=12V -
-
100
I
GSS
Gate-Source Reverse Leakage
V
GS
=-12V -
-
-100
nA
Q
g
Total
Gate
Charge
(Note 3)
-
23
35
Q
gs
Gate-Source
Charge
- 4.5 7
Q
gd
Gate-Drain ("Miller") Charge
I
D
=6A,
V
DS
=20V,
V
GS
=5V
- 7 11
nC
t
d(on)
Turn-On Delay Time
(Note 3)
-
30
60
t
r
Rise
Time
- 70
140
t
d(off)
Turn-Off Delay Time
-
40
80
t
f
Fall-Time
V
DS
=10V,
I
D
=1A,
R
G
=6, V
GS
=5V
R
D
=10
- 65
130
ns
C
iss
Input
Capacitance
- 1035 -
C
oss
Output
Capacitance
- 320 -
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=20V,
f=1.0MHz
- 150 -
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S
Continuous Source Current (Body Diode) V
D
=V
G
=0V, V
S
=1.3V
- -
1.54
V
V
SD
Forward On Voltage
(Note 3)
T
J
=25C, I
S
=1.7A,
V
GS
=0V
- 0.78 1.2 V
Note 1: Surface mounted on 1 in
2
copper pad of FR4 board, 135
o
C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width 300us, duty cycle 2%.
AF9926N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
3/6
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. R
DSON
v.s. Junction Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
AF9926N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
4/6
Typical Performance Characteristics (Continued)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Typical Gate Charge v.s. V
GS
Fig 10. Typical Capacitance v.s. V
DS
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AF9926N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Sep 5, 2005
5/6
Typical Performance Characteristics (Continued)
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
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