AF9928N
N-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Aug 11, 2005
1/5
Features
- Low On-resistance
- Capable of 2.5V Gate Drive
- Optimal DC/DC battery application
Product Summary
BV
DSS
(V)
r
DS(on)
(m)
I
D
(A)
20 23 5
Pin Assignments
TSSOP-8
5
6
7
8
4
3
2
1
D2
S2
S2
G2
D1
S1
S1
G1
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Pin Descriptions
Pin Name
Description
S1/2 Source
G1/2 Gate
D1/2 Drain
Ordering information
A X 9928N X X X
PN
Package
Feature
F :MOSFET
TS: TSSOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF9928N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Aug 11, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
20
V
V
GS
Gate-Source
Voltage
12
V
at T
A
=25C 5
I
D
Drain
Current
(Note 1)
, at V
GS
=4.5V
at T
A
=70C 3.5
A
I
DM
Pulsed Drain Current
(Note 2)
25
A
Total Power Dissipation
1
W
P
D
Linear Derating Factor
at T
A
=25C
0.008 W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Value
Units
Rthj-a Thermal
Resistance
Junction-Ambient
(Note 1)
Max. 125
o
C/W
Note 1: Surface mounted on 1 in
2
copper pad of FR4 board, 208
o
C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Electrical Characteristics
at T
J
=25C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source
Breakdown
Voltage V
GS
=0V, I
D
=250uA 20
- -
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25
o
C,
I
D
=1mA
- 0.02 - V/
o
C
V
GS
=4.5V, I
D
=5A -
-
23
m
R
DS(on)
Static Drain-Source On-Resistance
(Note 3)
V
GS
=2.5V, I
D
=2A -
-
29
m
V
GS(th)
Gate
Threshold
Voltage
V
DS
=V
GS
, I
D
=250uA 0.5 - - V
g
fs
Forward
Transconductance
V
DS
=10V, I
D
=5A
- 21 - S
V
DS
=20V, V
GS
=0V,
T
J
=25C
- - 1
uA
I
DSS
Drain-Source
Leakage
Current
V
DS
=20V, V
GS
=0V,
T
J
=70C
- - 25
uA
I
GSS
Gate-Source
Leakage
V
GS
=12V -
-
10
uA
Q
g
Total
Gate
Charge
(Note 3)
-
15.9
-
nC
Q
gs
Gate-Source
Charge
- 1.5 - nC
Q
gd
Gate-Drain ("Miller") Charge
I
D
=5A,
V
DS
=10V,
V
GS
=4.5V
- 7.4 - nC
t
d(on)
Turn-On Delay Time
(Note 3)
- 6.2 - ns
t
r
Rise
Time
- 9 - ns
t
d(off)
Turn-Off Delay Time
-
30
-
ns
t
f
Fall-Time
V
DS
=10V,
I
D
=1A,
R
G
=3.3, V
GS
=4.5V
R
D
=10
- 11 - ns
C
iss
Input
Capacitance
- 530 - pF
C
oss
Output
Capacitance
- 245 - pF
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=20V,
f=1.0MHz
- 125 - pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
S
Continuous Source Current (Body
Diode)
V
D
=V
G
=0V, V
S
=1.2V - -
0.83
A
V
SD
Forward On Voltage
(Note 3)
T
J
=25C , I
S
=5A,
V
GS
=0V
- - 1.2
V
Note3: Pulse width 300us, duty cycle 2%.
AF9928N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Aug 11, 2005
3/5
Typical Performance Characteristics
AF9928N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Aug 11, 2005
4/5
Typical Performance Characteristics (Continued)
AF9928N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Aug 11, 2005
5/5
Marking Information
TSSOP-8L
( Top View )
9 9 2 8 N
AA Y W X
Year code:
Part Number
Lot code:
Week code:
Factory code
"A~Z": 01~26;
"A~Z": 27~52
"4" =2004
~
"A~Z": 01~26;
"A~Z": 27~52
"X": Non-Lead Free; "X": Lead Free
Logo
Package Information
Package Type: TSSOP-8L
L
C
DETAIL A
E
E1
A
A1
D
e
B
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Dimensions In Millimeters
Symbol
Min.
Nom.
Max.
A - -
1.20
A1 0.05 - 0.15
B 0.19 - 0.30
C -
0.127
-
D
2.90 3.00 3.10
E
6.20 6.40 6.60
E1 4.30 4.40 4.50
L
0.45 0.60 0.75
e 0.65
REF.
0
o
-- 8
o
PDF 
ZIP