High Performance InGaAs p
-
i
-
n Photodiode
`ST' Active Device Mount
13PD100-ST
The 13PD100-ST, an InGaAs photodiode with a 100
m-diameter photosensitive region
packaged in a TO-46 header and aligned in an AT&T ST active device mount, is the largest
standard device enabling a 1 GHz Frequency cutoff. Planar semiconductor design and dielectric
passivation provide superior low noise performance. Reliability is assured by hermetic sealing
and a 100% purge burn-in ( 200
o
C, 15 hours, V
r
= 20V ). The ST receptacle is suitable for
bulkhead and PC board mounting.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Test Conditions
Min
Typ
Max Units
Operating Voltage
-
-
-
-20
Volts
Dark Current
-5V
- 0.5 2
nA
Capacitance -5V
- 1.15 1.9 pF
Responsivity 1300nm
0.65
0.8 - A/W
Rise/Fall
-
- -
0.5
ns
Frequency Response (-3dB)
-
1.0 -
GHz
Absolute Maximum Ratings
Reverse Voltage
30 Volts
Forward Current
5 mA
Reverse Current
500
A
Operating Temperature
-40
o
C to + 85
o
C
Storage Temperature
-40
o
C to + 85
o
C
Soldering Temperature
250
o
C
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502
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