High Speed InGaAs p
-
i
-
n Photodiode
13PD100-TO
The 13PD100-TO, an InGaAs photodiode with a 100
m-diameter photosensitive region
packaged in a TO-46 header, is the largest standard device enabling a 1 GHz frequency cutoff.
Planar semiconductor design and dielectric passivation provide low noise performance.
Reliability is assured by hermetic sealing and 100% purge burn-in ( 200
o
C, 15 hours, V
r
= 20V
). Chips can also be attached and wire bonded to customer-supplied or other specified
packages. Headers are available with either a lensed or flat window cap.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Test Conditions
Min
Typ
Max Units
Operating Voltage
-
-
-
-20
Volts
Dark Current
-5V
- 0.5 2 nA
Capacitance -5V
- 1.15 - pF
Responsivity 1300nm
0.8
0.90 - A/W
Rise/Fall
-
- -
0.5
ns
Frequency Response (-3dB)
-
1.0 -
GHz
Absolute Maximum Ratings
Reverse Voltage
30 Volts
Forward Current
10 mA
Reverse Current
500
A
Operating Temperature
-40
o
C to + 85
o
C
Storage Temperature
-40
o
C to + 85
o
C
Soldering Temperature
250
o
C
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