High Performance InGaAs p
-
i
-
n Photodiode
13PD150-TO
The 13PD150-TO, an InGaAs photodiode with a 150
m-diameter photosensitive region
packaged in a TO-46 header, is intended for moderate-to-high speed applications. Efficient
coupling to mulit-mode fiber in active device receptacles is enabled by the relatively large
photosensitive area. Planar semiconductor design and dielectric passivation provide low noise
performance. Reliability is assured by hermetic sealing and a 100% purge burn-in ( 200
o
C, 15
hours, V
r
= 20V ). Chips can also be attached and wire bonded to customer supplied or other
specified packages. Headers are available with either a lensed or flat window cap.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Test Conditions
Min
Typ
Max Units
Operating Voltage
-
-
-
-15
Volts
Dark Current
-5V
- 0.5 2.5
nA
Capacitance -5V
- 1.50 2.25 pF
Responsivity 1300nm
0.7
0.85 - A/W
Rise/Fall
-
- -
2
ns
Absolute Maximum Ratings
Reverse Voltage
20 Volts
Forward Current
5 mA
Reverse Current
1 mA
Operating Temperature
-40
o
C to + 85
o
C
Storage Temperature
-40
o
C to + 85
o
C
Soldering Temperature
250
o
C
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502
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