Large Area InGaAs p
-
i
-
n Photodiode
35PD1M-TO
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive region and
packaged in a TO-46 header, is designed for applications in high sensitivity instrumentation and
sensing. Devices are hermetically sealed in a TO-46 header. Low dark current and high
dynamic impedance are featured. High reliability is achieved through planar semiconductor
design and dielectric-passivation. Chips can also be attached and wire bonded to customer-
supplied or other specified packages.
Features
Planar Structure
Dielectric Passivation
High Dynamic Impedance
High Responsivity
Device Characteristics:
Parameters Test Conditions Min Typ Max Units
Dark Current
Class A -1.0V
- 2
-
nA
Class B
100
nA
Class C
1
A
Capacitance
0V
- 150 -
pF
Responsivity
1300nm
0.9 -
A/W
1550nm
1.0 -
A/W
Rise/Fall
15
ns
Dynamic Impedance
0V
Class A
50
-
-
M ohm
Class B
1.0
-
-
M ohm
Class C
0.15
-
-
M ohm
Absolute Maximum Ratings
Reverse Voltage
15 Volts
Forward Current
100 mA
Reverse Current
20 mA
Operating Temperature
-40
o
C to + 85
o
C
Storage Temperature
-40
o
C to + 85
o
C
Soldering Temperature
250
o
C
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502
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