12/2002
AWS5522
0.5 to 2.5 GHz SPDT Switch
ADVANCED PRODUCT INFORMATION - Rev 0.1
D1
Die
FEATURES
Low Insertion Loss: 0.5 dB at 2 GHz
High Isolation: > 25 dB
Low Harmonic Levels: < -65 dBc
Low Control Voltage Operation: to +2.5 V
Low Profile Surface Mount Package
APPLICATIONS
GSM Wireless Handsets and
Front-end Modules
CDMA Wireless Handsets and
Front-end Modules
Figure 1: Block Diagram
PRODUCT DESCRIPTION
The AWS5522 is a single pole, double throw (SPDT)
RF switch developed to meet the stringent
requirements of GSM and CDMA systems.
Manufactured in ANADIGICS's state-of-the-art
pHEMT process, the device uses patent-pending
S26 Package
12 Pin MLF
3mm x 3mm
circuit topologies to provide the low insertion loss, high
port-to-port isolation and high linearity needed to
enhance the performance of wireless handset radios.
The AWS5522 is offered both as an MMIC die and in
a 12-lead 3mm x 3mm MLF package.
RFC
VS2
RF1G
RF1
V1
V2
RF2G
RF2
VS1
AWS
5522
2
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5522
Figure 3: Packaged Device
Pinout (X-ray Top View)
Table 2: Pin Description
NAME
RF1
V1
V2
RF2
VS2
RFC
GND
NC
DESCRIPTION
RF port, path 1
Control voltage,
RF path 1
Control voltage,
RF path 2
RF port, path 2
Common port bias
Voltage (logic high)
RF common port
Ground
No connection
PIN
2
4
6
8
10
11
3, 7
1, 5, 9, 12
1
3
2
7
8
9
4
6
5
10
12
11
NC
GND
RF1
RF2
GND
NC
NC
V1
V2
RFC
NC
VS2
Figure 2 : Die Configuration
Table 1 : Pad Description
NAME
VS1
RF1
RF1G
V1
V2
RF2G
RF2
VS2
RFC
DESCRIPTION
Common port bias
voltage (logic high)
RF port, path 1
Ground
Control voltage,
RF path 1
Control voltage,
RF path 2
Ground
RF port, path 2
Common port bias
voltage (logic high)
RF common port
Dimensions in
m.
Bond Pads: 100
m x75
m
Die Thickness: 178
m
No backside metal.
V1
RF2G
RF1G
V2
RF1
VS1
RFC
RF2
VS2
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
3
AWS5522
ELECTRICAL CHARACTERISTICS
Table 3: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not
implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely
affect reliability.
Notes:
(1) The VS1 and VS2 ports may remain open-circuited without damage to the device.
(2) Storage Temperature limits apply to the die only after it has been removed from the ANADIGICS
shipping material. (The limits apply at all times for the packaged device.)
3. The RF1, RF2 and RFC ports should be AC-coupled. No external DC bias should be applied.
PARAMETER
Common Port Bias Voltage (V
S
)
Control Voltages (V
1
, V
2
)
RF Input Power (P
IN
)
Storage Temperature
(2)
MIN
-0.2
-0.2
-
-65
MAX
+8.0
+8.0
10
+150
UNIT
V
V
W
C
COMMENTS
at VS1 or VS2
(1)
at RF1, RF2 and RFC
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For optimal linearity performance, the Common Port Bias Voltage (V
S
) should be set to the same Control Voltage used
to turn ON either of the individual RF paths. The VS1 and VS2 ports may remain open-circuited without damage to the
device, but with some degradation in linearity.
Table 4: Operating Ranges
PARAMETER
RF Frequency (f)
Common Port Bias Voltage (V
S
)
Control Voltages (V
1
, V
2
)
Ambient Temperature (T
A
)
MIN
0.5
0
+2.5
-30
TYP
-
(1)
-
-
-
MAX
2.5
+0.2
+3.5
+85
UNIT
GHz
V
C
COMMENTS
applied at either VS1
or VS2 port
RF path OFF state
RF path ON state
4
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5522
Table 5: Electrical Specifications - Unpackaged Die
(T
A
= +25
C; RF ports terminated with 50
; V
n
= +2.7 V and is the Control Voltage
for the ON path, RFC-RFn; V
x
= 0 V and is the Control Voltage for the OFF path, RFC-RFx)
Notes:
(1) The isolated RFx port has a return loss of approximately -3 dB.
(2) For the Cellular Band, two tones with P
IN
= +22.5 dBm each, at 900.0 and 900.1 MHz. For the PCS Band, two tones
with P
IN
= +21 dBm each, at 1900.0 and 1900.1 MHz.
(3) V
s
= V
n
PARAMETER
Insertion Loss
1 GHz
2 GHz
Return Loss
(1)
1 GHz
2 GHz
Isolation
1 GHz
2 GHz
Input Third Order Intercept
(2)
800 MHz Cellular Band
1900 MHz PCS Band
2nd Harmonic Rejection
(3)
1 GHz
2 GHz
3rd Harmonic Rejection
(3)
1 GHz
2 GHz
Current Consumption
MIN
-
-
-
-
25
25
-
-
-
-
-
-
-
-
TYP
0.4
0.5
-30
-32
27
27
+60
+59
-79
-78
-88
-81
-
-
MAX
0.6
0.8
-20
-20
-
-
-
-
-65
-65
-65
-65
30
5
UNIT
dB
dB
dB
dBm
dBc
dBc
A
A
COMMENTS
RFC port to selected RFn port
RFC port and selected RFn port
RFC port to isolated RFx port
RFC port to selected RFn port
P
IN
= +34 dBm
P
IN
= +32 dBm
P
IN
= +34 dBm
P
IN
= +32 dBm
each Vn port
VS1 or VS2 port
CONTROL VOLTAGES
V
1
+2.5 to +3.5 V
0 to +0.2 V
RF PATH SELECTION
V
2
0 to +0.2 V
+2.5 to +3.5V
RFC - RF1
ON
OFF
RFC - RF2
OFF
ON
Table 6: Switch Control Truth Table
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
5
AWS5522
Table 7: Electrical Specifications - Packaged Device
(T
A
= +25
C; RF ports terminated with 50
; V
n
= +2.7 V and is the Control Voltage
for the ON path, RFC-RFn; V
x
= 0 V and is the Control Voltage for the OFF path, RFC-RFx)
Notes:
(1) The isolated RFx port has a return loss of approximately -3 dB.
(2) For the Cellular Band, two tones with P
IN
= +22.5 dBm each, at 900.0 and 900.1 MHz. For the PCS Band, two tones
with P
IN
= +21 dBm each, at 1900.0 and 1900.1 MHz.
(3) V
s
= V
n
PARAMETER
Insertion Loss
1 GHz
2 GHz
Return Loss
(1)
1 GHz
2 GHz
Isolation
1 GHz
2 GHz
Input Third Order Intercept
(2)
800 MHz Cellular Band
1900 MHz PCS Band
2nd Harmonic Rejection
(3)
1 GHz
2 GHz
3rd Harmonic Rejection
(3)
1 GHz
2 GHz
Current Consumption
MIN
-
-
-
-
25
25
-
-
-
-
-
-
-
-
TYP
0.4
0.5
-28
-33
27
27
+60
+59
-75
-76
-70
-74
-
-
MAX
-0.6
-0.8
-20
-20
-
-
-
-
-65
-65
-65
-65
30
5
UNIT
dB
dB
dB
dBm
dBc
dBc
A
A
COMMENTS
RFC port to selected RFn port
RFC port and selected RFn port
RFC port to isolated RFx port
RFC port to selected RFn port
P
IN
= +34 dBm
P
IN
= +32 dBm
P
IN
= +34 dBm
P
IN
= +32 dBm
each Vn port
VS2 port
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