10/2001
AWT6105
Cellular Dual Mode AMPS/CDMA
3.5V/28.5dBm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.2
M5 Package
6x6mm Module
FEATURES
InGaP HBT Technology
High Efficiency 45% AMPS
High Efficiency 35% CDMA
Low Leakage Current (<5
A)
SMT Module Package
Small Foot Print (6mm x 6mm)
Low Profile (1.5mm)
50
Input and Output Matching
Low Quiescent Current (I
cq
= 50mA Typ)
Shut Down and Mode Control
CDMA 2000 1XRTT Compliant
APPLICATIONS
Dual Mode AMPS/CDMA Wireless
Handsets
PRODUCT DESCRIPTION
The AWT6105 is a high power, high efficiency
amplifier module for Dual Mode CDMA/AMPS
wireless handset applications. The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability and ruggedness. A low power
quiescent current mode is digitally controlled to
reduce power drain on the system battery. The 6mm
x 6mm laminate package is self contained,
incorporating 50
input and output matching
networks optimized for output power, linearity, and
efficiency.
Figure 1: Block Diagram
Bias Control
V
C C
V
REF
V
MODE
RF
IN
RF
OUT
GND
2
PRELIMINARY DATA SHEET - Rev 1.2
10/2001
AWT6105
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (V
CC
)
+5
V
V
MOD
Voltage (V
MOD
)
+3.5
V
Control Voltage (V
REF
)
+3.5
V
Input Power (RF
IN
)
+10
dBm
Operating Temperature (T
C
)
-30
110
C
Storage Temperature (T
STG
)
-40
150
C
Note: Module may withstand all conditions.
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 1: Pin Description
PIN
NAME
DESCRIPTION
1
V
CC
Supply Voltage
2
RF
IN
RF Input Signal
3
V
REF
Reference Voltage
4
V
MODE
Mode Control
5
V
CC
Supply Voltage
6
RF
OUT
RF output
7
GND
Ground
PRELIMINARY DATA SHEET - Rev 1.2
10/2001
3
AWT6105
Table 3: Electrical Specifications (AMPS 824-849 MHz)
Table 4: Bias Control
Bias
Mode
V
MODE
ICQ TYP
POWER
RANGE
P
OUT
LEVELS
MODE
Low
2.7V
50 mA
All
0-32 dBm
AMPS All Power Levels
Low
2.7V
50 mA
Low
-50 to +20 dBm
CDMA Low Power
High
0V
100 mA
High
20-29 dBm
CDMA High Power
Note: Unless otherwise specified: V
cc
= 3.5V, Z
IN
= Z
OUT
= 50
System , T
C
= 25 C
PARAMETER
MIN
TYP
MAX
UNIT
Frequency Range
824
849
MHz
Supply Voltage Range
3.0
3.5
4.2
V
Ref Voltage Range: PA "on"
2.9
3.0
3.1
V
Ref Voltage Range: PA "off"
0
0.5
V
Ref current
5
7
mA
V
MODE
High Bias
0
0.5
V
V
MODE
Low Bias
2.5
3
3.1
V
Gain, P
OUT
= 31 dBm
28
31
dB
Output Power, V
CC
= 3.5V
31
32
dBm
Output Power, V
CC
= 3.0V
30
dBm
Input Impedance
2:1
Ratio
Power Added Efficiency
P
OUT
= 31dBm Vcc=3.5V, V
MODE
= 2.7V
46
%
Icq (V
MODE
= 2.7V)
Low Power Mode
50
mA
Noise at Receiver Band
P
OUT
31 dBm
-135
dBm/Hz
Leakage Current
V
CC
= 3.5V ; V
REF
= 0V ; V
MODE
= 0V
5
A
Harmonics 2fo, P
OUT
= 31 dBm
-40
-30
dBc
3fo, P
OUT
= 31 dBm
-50
-30
dBc
Stability
(out of band load VSWR 8:1)
(in band load VSWR 8:1)
Over Temperature and & Voltage
-70
dBc, all
spurious
P
OUT
31dBm
Ruggedness
Stress for no permanent degradation or
failure, VCC = 5.0 Over Temperature
8:1
Ratio
4
PRELIMINARY DATA SHEET - Rev 1.2
10/2001
AWT6105
Table 5: Electrical Specifications (CDMA 824-849 MHz)
Note: (Unless otherwise specified: V
cc
= 3.5V, Z
IN
= Z
OUT
= 50
System, T
C
= 25 C)
PARAMETER
MIN
TYP
MAX
UNIT
Frequency Range
824
849
MHz
Supply Voltage Range
3.0
3.5
4.2
V
Ref Voltage Range:PA "on"
2.9
3.0
3.1
V
Ref Voltage Range:PA "off"
0
0.5
V
Ref current
5
7
mA
V
MODE
High Bias
0
0.5
V
V
MODE
Low Bias
2.5
3
3.1
V
Gain, P
OUT
= 28.5 dBm
28
31.5
dB
Output Power, V
CC
= 3.5V
28
28.5
dBm
Output Power, V
CC
= 3.0V
27
27.5
dBm
Input VSWR
2:1
Ratio
Power Added Efficiency
P
OUT
= 28.5 dBm
35
%
Power Added Efficiency V
MODE
= 2.7V
P
OUT
= 16 dBm, Low Power Mode
6
7
%
Icq (V
MODE
= 2.7V)
Low Power Mode
50
mA
Linearity (P
OUT
avg. = 28.5 dBm) & V
CC
=3.5V
Adjacent Channel Power Rejection @
885 KHz offset , Primary Channel
Bandwidth=1.23 MHz , Adjacent Channel
Bandwidth=30KHz , P
OUT
28.5dBm
-48
-46
dBc
Adjacent Channel Power Rejection @
1.98 MHz offset , Primary Channel
Bandwidth=1.23 MHz , Adjacent Channel
Bandwidth=30KHz, P
OUT
28.5dBm
-59
-57
dBc
Noise at Receiver Band
P
OUT
28.5 dBm
-135
dBm/Hz
Harmonics 2fo, P
OUT
= 28.5 dBm
-40
-30
dBc
3fo, P
OUT
= 28.5 dBm
-40
-30
dBc
Stability
(out of band load VSWR <8:1)
(in band load VSWR <8:1)
-70
dBc, all
spurious
P
OUT
29dBm
Ruggedness
Stress for no permanent degradation or
failure, V
CC
= 5.0V, Over Temperature
8:1
Ratio
PRELIMINARY DATA SHEET - Rev 1.2
10/2001
5
AWT6105
PERFORMANCE DATA
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
IS-95 Gain & Eff. versus Pout @ 836.5 MHz
Vcc: 3.0V, Vref: 3.0V, Vmode: 2.7V
20
21
22
23
24
25
26
27
28
29
30
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
Pout (dBm)
Gain (dB)
0
1
2
3
4
5
6
7
8
9
10
Eff (%)
-30C
25C
85C
-30C
25C
85C
IS-95 Gain & Eff. versus Pout @ 836.5 MHz
Vcc: 3.0V, Vref: 3.0V, Vmode: 0.0V
21
22
23
24
25
26
27
28
29
30
31
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout (dBm)
Gain (dB)
0
5
10
15
20
25
30
35
40
45
50
Eff (%)
-30C
25C
85C
-30C
25C
85C
IS-95 Gain & Eff. versus Pout @ 836.5 MHz
Vcc: 3.5V, Vref: 3.0V, Vmode: 2.7V
20
21
22
23
24
25
26
27
28
29
30
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
Pout (dBm)
Gain (dB)
0
1
2
3
4
5
6
7
8
9
10
Eff (%)
-30C
25C
85C
-30C
25C
85C
IS-95 Gain & Eff. versus Pout @ 836.5 MHz
Vcc: 3.5V, Vref: 3.0V, Vmode: 0.0V
21
22
23
24
25
26
27
28
29
30
31
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout (dBm)
Gain (dB)
0
5
10
15
20
25
30
35
40
45
50
Eff (%)
-30C
25C
85C
-30C
25C
85C
IS-95 Gain & Eff. versus Pout @ 836.5 MHz
Vcc: 4.2V, Vref: 3.0V, Vmode: 2.7V
20
21
22
23
24
25
26
27
28
29
30
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
Pout (dBm)
Gain (dB)
0
1
2
3
4
5
6
7
8
9
10
Eff (%)
-30C
25C
85C
-30C
25C
85C
IS-95 Gain & Eff. versus Pout @ 836.5 MHz
Vcc: 4.2V, Vref: 3.0V, Vmode: 0.0V
21
22
23
24
25
26
27
28
29
30
31
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout (dBm)
Gain (dB)
0
5
10
15
20
25
30
35
40
45
50
Eff (%)
-30C
25C
85C
-30C
25C
85C
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