11/2002
AWT6131
PCS/CDMA 3.5V/29dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4mm x 4mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency: 37%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
A
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
Tri Mode CDMA Handsets with GPS
PRODUCT DESCRIPTION
The AWT6131 provides the additional output power
margin RF designers need to overcome additional
post-PA insertion loss in tri-mode handset designs
supporting E911 (GPS enabled). The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
2
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
AWT6131
V
CC
RF
OUT
V
REF
RF
IN
V
MODE
GND
1
GND
10
2
3
4
5
6
9
8
7
V
CC
GND
GND
GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
2
F
R
N
I
t
u
p
n
I
F
R
3
D
N
G
d
n
u
o
r
G
4
V
E
D
O
M
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
5
V
F
E
R
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
6
D
N
G
d
n
u
o
r
G
7
D
N
G
d
n
u
o
r
G
8
F
R
T
U
O
t
u
p
t
u
O
F
R
9
D
N
G
d
n
u
o
r
G
0
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
AWT6131
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
0
5
+
V
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
0
5
.
3
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
0
5
.
3
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
0
1
+
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
0
4
-
0
5
1
+
C
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)
f
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
0
5
8
1
-
0
1
9
1
z
H
M
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
2
.
3
+
5
.
3
+
2
.
4
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
8
.
2
+
0
9
.
2
+
-
1
.
3
+
5
.
0
+
V
"
n
o
"
A
P
"
n
w
o
d
t
u
h
s
"
A
P
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
5
.
2
+
0
9
.
2
+
-
1
.
3
+
5
.
0
+
V
e
d
o
M
s
a
i
B
w
o
L
e
d
o
M
s
a
i
B
h
g
i
H
P
(
r
e
w
o
P
t
u
p
t
u
O
F
R
T
U
O
)
0
.
9
2
+
-
-
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
3
-
-
5
8
+
o
C
4
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
AWT6131
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
n
i
a
G
6
2
5
.
3
2
8
2
5
2
0
3
5
.
7
2
B
d
P
T
U
O
V
,
m
B
d
9
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
9
.
2
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
t
e
s
ff
o
z
H
k
5
2
.
1
t
a
z
H
M
3
2
.
1
=
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
8
4
-
0
5
-
5
.
6
4
-
5
.
6
4
-
B
d
P
T
U
O
V
,
m
B
d
9
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
9
.
2
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
t
e
s
ff
o
z
H
M
5
2
.
2
t
a
z
H
M
3
2
.
1
=
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
1
6
-
5
6
-
7
5
-
7
5
-
B
d
P
T
U
O
V
,
m
B
d
9
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
9
.
2
+
=
y
c
n
e
i
c
if
f
E
d
e
d
d
A
-
r
e
w
o
P
5
.
5
3
5
.
6
7
3
5
.
7
-
-
%
P
T
U
O
V
,
m
B
d
9
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
9
.
2
+
=
)
q
c
I
(
t
n
e
r
r
u
C
t
n
e
c
s
e
i
u
Q
-
0
5
0
6
A
m
V
E
D
O
M
V
9
.
2
+
=
t
n
e
r
r
u
C
e
c
n
e
r
e
f
e
R
-
5
.
6
9
A
m
V
h
g
u
o
r
h
t
F
E
R
n
i
p
t
n
e
r
r
u
C
l
o
r
t
n
o
C
e
d
o
M
-
3
.
0
5
.
0
A
m
V
h
g
u
o
r
h
t
E
D
O
M
n
i
p
t
n
e
r
r
u
C
e
g
a
k
a
e
L
-
1
<
5
A
V
C
C
,
V
2
.
4
+
=
V
F
E
R
V
0
=
V
E
D
O
M
V
0
=
d
n
a
B
e
v
i
e
c
e
R
n
i
e
s
i
o
N
-
5
3
1
-
3
3
1
-
z
H
/
m
B
d
z
H
M
0
9
9
1
o
t
z
H
M
0
3
9
1
s
c
i
n
o
m
r
a
H
o
f
2
o
f
4
,
o
f
3
-
-
0
4
-
5
5
-
0
3
-
0
3
-
c
B
d
e
c
n
a
d
e
p
m
I
t
u
p
n
I
-
-
1
:
2
R
W
S
V
l
e
v
e
L
t
u
p
t
u
O
s
u
o
ir
u
p
S
)
s
t
u
p
t
u
o
s
u
o
ir
u
p
s
ll
a
(
-
-
5
6
-
c
B
d
P
T
U
O
<
m
B
d
9
2
+
1
:
8
<
R
W
S
V
d
a
o
l
d
n
a
b
-
n
I
1
:
8
<
R
W
S
V
d
a
o
l
d
n
a
b
-
f
o
-
t
u
O
d
n
a
e
g
a
tl
o
v
ll
a
r
e
v
o
s
e
il
p
p
A
s
e
g
n
a
r
g
n
it
a
r
e
p
o
e
r
u
t
a
r
e
p
m
e
t
o
n
h
ti
w
s
s
e
r
t
s
h
c
t
a
m
s
i
m
d
a
o
L
e
r
u
li
a
f
r
o
n
o
it
a
d
a
r
g
e
d
t
n
e
n
a
m
r
e
p
1
:
8
-
-
R
W
S
V
V
C
C
P
,
V
0
.
5
+
=
N
I
m
B
d
5
+
=
g
n
it
a
r
e
p
o
ll
u
f
r
e
v
o
s
e
il
p
p
A
e
g
n
a
r
e
r
u
t
a
r
e
p
m
e
t
Table 4: Electrical Specifications
(T
C
= +25 C, V
CC
= +3.5 V, V
REF
= +2.9 V, 50
system)
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
AWT6131
5
Figure 8: ACP2 vs. Frequency
P
= +16 dBm, Low Bias Mode
(T = +25 C, V
= +3.4 V, V
= +2.9 V, V
= +2.9 V)
OUT
C
CC
REF
MODE
-74.00
-72.00
-70.00
-68.00
-66.00
-64.00
-62.00
-60.00
-58.00
1850 MHz
1880 MHz
1910 MHz
Frequency
ACPR
(d
B)
-30deg C
25deg C
85deg C
PERFORMANCE DATA
Figure 4: ACP1 vs. Frequency
P
= +29 dBm, High Bias Mode
(T = +25 C, V
= +3.4 V, V
= +2.9 V, V
= 0 V)
OUT
C
CC
REF
MODE
-50.00
-49.00
-48.00
-47.00
-46.00
-45.00
-44.00
1850 MHz
1880 MHz
1910 MHz
Frequency
ACPR
(d
B)
-30deg C
25deg C
85deg C
Figure 3: PAE vs. Frequency
P
= +29 dBm, High Bias Mode
(T = +25 C, V
= +3.4 V, V
= +2.9 V, V
= 0 V)
OUT
C
CC
REF
MODE
36.0
36.5
37.0
37.5
38.0
38.5
39.0
39.5
40.0
1850 MHz
1880 MHz
1910 MHz
Frequency
PA
E
(
%
)
-30deg C
25deg C
85deg C
Figure 5: ACP2 vs. Frequency
P
= +29 dBm, High Bias Mode
(T = +25 C, V
= +3.4 V, V
= +2.9 V, V
= 0 V)
OUT
C
CC
REF
MODE
-61.00
-60.00
-59.00
-58.00
-57.00
-56.00
-55.00
-54.00
-53.00
-52.00
1850 MHz
1880 MHz
1910 MHz
Frequency
ACPR
(
d
B
)
-30deg C
25deg C
85deg C
Figure 6: PAE vs. Frequency
P
= +16 dBm, Low Bias Mode
(T = +25 C, V
= +3.4 V, V
= +2.9 V, V
= +2.9 V)
OUT
C
CC
REF
MODE
7.0
7.2
7.4
7.6
7.8
8.0
8.2
8.4
1850 MHz
1880 MHz
1910 MHz
Frequency
PA
E
(
%
)
-30deg C
25deg C
85deg C
Figure 7: ACP1 vs. Frequency
P
= +16 dBm, Low Bias Mode
(T = +25 C, V
= +3.4 V, V
= +2.9 V, V
= +2.9 V)
OUT
C
CC
REF
MODE
-54.00
-53.00
-52.00
-51.00
-50.00
-49.00
-48.00
-47.00
-46.00
-45.00
-44.00
1850 MHz
1880 MHz
1910 MHz
Frequency
ACPR
(d
B)
-30deg C
25deg C
85deg C
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