08/2003
AWT6135
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4mm x 4mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency: 40%
Low Quiescent Current: 48 mA
Low Leakage Current in Shutdown Mode: <1
A
V
REF
= +2.8 V (+2.7 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6135 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for V
REF
= +2.8 V,
a requirement for compatibility with the Qualcomm
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
2
PRELIMINARY DATA SHEET - Rev 1.1
08/2003
AWT6135
V
CC
RF
OUT
V
REF
RF
IN
V
MODE
GND
1
GND
10
2
3
4
5
6
9
8
7
V
CC
GND
GND
GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
2
F
R
N
I
t
u
p
n
I
F
R
3
D
N
G
d
n
u
o
r
G
4
V
E
D
O
M
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
5
V
F
E
R
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
6
D
N
G
d
n
u
o
r
G
7
D
N
G
d
n
u
o
r
G
8
F
R
T
U
O
t
u
p
t
u
O
F
R
9
D
N
G
d
n
u
o
r
G
0
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
PRELIMINARY DATA SHEET - Rev 1.1
08/2003
AWT6135
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
0
5
+
V
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
0
5
.
3
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
0
5
.
3
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
0
1
+
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
0
4
-
0
5
1
+
C
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)
f
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
0
5
8
1
-
0
1
9
1
z
H
M
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
2
.
3
+
4
.
3
+
2
.
4
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
7
.
2
+
0
8
.
2
+
-
9
.
2
+
5
.
0
+
V
"
n
o
"
A
P
"
n
w
o
d
t
u
h
s
"
A
P
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
5
.
2
+
0
8
.
2
+
-
1
.
3
+
5
.
0
+
V
e
d
o
M
s
a
i
B
w
o
L
e
d
o
M
s
a
i
B
h
g
i
H
P
(
r
e
w
o
P
t
u
p
t
u
O
F
R
T
U
O
)
5
.
7
2
+
)
1
(
0
.
8
2
+
-
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
3
-
-
5
8
+
C
Notes:
(1) For operation at T
C
= +85 C and V
CC
= +3.2 V, P
OUT
is derated by 0.5 dB.
4
PRELIMINARY DATA SHEET - Rev 1.1
08/2003
AWT6135
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
n
i
a
G
5
2
2
2
7
2
5
2
0
3
7
2
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
8
.
2
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
)
1
(
t
e
s
ff
o
z
H
k
5
2
.
1
t
a
z
H
M
3
2
.
1
=
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
9
4
-
1
5
-
7
4
-
7
4
-
c
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
8
.
2
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
)
1
(
t
e
s
ff
o
z
H
M
5
2
.
2
t
a
z
H
M
3
2
.
1
=
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
0
6
-
0
7
-
7
5
-
7
5
-
c
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
8
.
2
+
=
y
c
n
e
i
c
if
f
E
d
e
d
d
A
-
r
e
w
o
P
)
1
(
7
3
8
5
.
9
3
9
-
-
%
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
8
.
2
+
=
)
q
c
I
(
t
n
e
r
r
u
C
t
n
e
c
s
e
i
u
Q
-
8
4
0
6
A
m
V
E
D
O
M
V
8
.
2
+
=
t
n
e
r
r
u
C
e
c
n
e
r
e
f
e
R
-
5
.
3
5
A
m
V
h
g
u
o
r
h
t
F
E
R
n
i
p
t
n
e
r
r
u
C
l
o
r
t
n
o
C
e
d
o
M
-
3
.
0
5
.
0
A
m
V
h
g
u
o
r
h
t
E
D
O
M
,
n
i
p
V
E
D
O
M
V
8
.
2
+
=
t
n
e
r
r
u
C
e
g
a
k
a
e
L
-
1
<
5
A
V
C
C
,
V
2
.
4
+
=
V
F
E
R
V
0
=
V
E
D
O
M
V
0
=
d
n
a
B
e
v
i
e
c
e
R
n
i
e
s
i
o
N
z
H
M
0
9
9
1
o
t
z
H
M
0
3
9
1
-
7
3
1
-
0
4
1
-
5
3
1
-
8
3
1
-
z
H
/
m
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
,
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
8
.
2
+
=
s
c
i
n
o
m
r
a
H
o
f
2
o
f
4
,
o
f
3
-
-
0
4
-
5
5
-
0
3
-
0
3
-
c
B
d
e
c
n
a
d
e
p
m
I
t
u
p
n
I
-
-
1
:
2
R
W
S
V
l
e
v
e
L
t
u
p
t
u
O
s
u
o
ir
u
p
S
)
s
t
u
p
t
u
o
s
u
o
ir
u
p
s
ll
a
(
-
-
5
6
-
c
B
d
P
T
U
O
<
m
B
d
8
2
+
1
:
8
<
R
W
S
V
d
a
o
l
d
n
a
b
-
n
I
1
:
8
<
R
W
S
V
d
a
o
l
d
n
a
b
-
f
o
-
t
u
O
d
n
a
e
g
a
tl
o
v
ll
a
r
e
v
o
s
e
il
p
p
A
s
e
g
n
a
r
g
n
it
a
r
e
p
o
e
r
u
t
a
r
e
p
m
e
t
o
n
h
ti
w
s
s
e
r
t
s
h
c
t
a
m
s
i
m
d
a
o
L
e
r
u
li
a
f
r
o
n
o
it
a
d
a
r
g
e
d
t
n
e
n
a
m
r
e
p
1
:
8
-
-
R
W
S
V
V
C
C
P
,
V
0
.
5
+
=
N
I
m
B
d
5
+
=
g
n
it
a
r
e
p
o
ll
u
f
r
e
v
o
s
e
il
p
p
A
e
g
n
a
r
e
r
u
t
a
r
e
p
m
e
t
Table 4: Electrical Specifications
(T
C
= +25 C, V
CC
= +3.4 V, V
REF
= +2.8 V, 50
system)
Notes:
(1) ACPR and PAE limits apply to middle frequency only.
PRELIMINARY DATA SHEET - Rev 1.1
08/2003
AWT6135
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the V
REF
and V
MODE
voltages.
Table 5: Bias Control
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the V
MODE
voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
N
O
I
T
A
C
I
L
P
P
A
P
T
U
O
S
L
E
V
E
L
S
A
I
B
E
D
O
M
V
F
E
R
V
E
D
O
M
r
e
w
o
p
w
o
l
-
A
M
D
C
<
m
B
d
6
1
+
w
o
L
V
8
.
2
+
V
8
.
2
+
r
e
w
o
p
h
g
i
h
-
A
M
D
C
m
B
d
6
1
+
>
h
g
i
H
V
8
.
2
+
V
0
n
w
o
d
t
u
h
S
-
n
w
o
d
t
u
h
S
V
0
V
0
C3
0.01F
C4
2.2F ceramic
GND
at slug
RF IN
2
9
1
6
7
10
8
5
4
3
V
CC
V
MODE
GND
RF
IN
GND
V
CC
GND
V
REF
GND
RF
OUT
VCC2
C1
0.01F
VCC1
VMODE
VREF
C2
0.01F
RF OUT
Figure 3: Application Circuit Schematic
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