09/2003
AWT6138
HELP
TM
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.0
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
handset. The device has mode-switching to take
advantage of its high efficiency operation over a wide
range of output powers. Higher low power efficiency
is achieved without an external DAC or DC-DC
converter. The integrated power amplifier module
employs a proprietary bias control and temperature
compensation circuit that assures stable operation,
even at extreme temperature conditions.
The self contained 4mm x 4mm surface mount
package incorporates matching networks optimized
for output power, efficiency and linearity in a 50[ohm]
system making it easy to incorporate the device into
BOTH new and existing designs.
FEATURES
InGaP HBT Technology
High Efficiency:
38% at +28 dBm
20% at +16 dBm
1.5% at 0 dBm
Low Quiescent Current: 20 mA
Low Leakage Current in Shutdown Mode: <1 mA
V
REF
= +2.85 V (+2.7 V min over temp)
Low Profile Surface Mount Package: 1.56mm Max
CDMA 1XRTT and 1xEV-DO Compliant
APPLICATIONS
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6138 PCS CDMA Power Amplifier is a high
performance CDMA2000/ 1XRTT amplifier designed
specifically for PCS wireless applications. This
rugged, easy to use InGaP HBT design delivers
state of the art efficiency and temperature stability
with very low DC power consumption. The
AWT6138 PA module has the lowest CDG currents
available to handset manufacturers today.
A combination of low idle current and mode
switching enables the AWT6138 to deliver
unparalleled CDMA average power efficiencies.
This bias feature allows the AWT6138 to significantly
increase the battery usage time of a mobile
ADVANCED PRODUCT INFORMATION - Rev 0.0
09/2003
AWT6138
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
0
5
+
V
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
0
5
.
3
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
0
5
.
3
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
0
1
+
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
0
4
-
0
5
1
+
C
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)f
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
0
5
8
1
-
0
1
9
1
z
H
M
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
2
.
3
+
4
.
3
+
2
.
4
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
7
.
2
+
0
5
8
.
2
+
-
5
9
.
2
+
5
.
0
+
V
"
n
o
"
A
P
"
n
w
o
d
t
u
h
s
"
A
P
V
(
e
g
a
tl
o
V
l
o
rt
n
o
C
e
d
o
M
E
D
O
M
)
5
.
2
+
0
8
.
2
+
-
1
.
3
+
5
.
0
+
V
e
d
o
M
s
a
i
B
w
o
L
e
d
o
M
s
a
i
B
h
g
i
H
P
(
r
e
w
o
P
t
u
p
t
u
O
F
R
T
U
O
)
5
.
7
2
+
)
1
(
0
.
8
2
+
-
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
3
-
-
5
8
+
C
Notes:
(1) For operation at T
C
= +85 C and V
CC
= +3.2 V, P
OUT
is derated by 0.5 dB.
ADVANCED PRODUCT INFORMATION - Rev 0.0
09/2003
AWT6138
5
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the V
REF
and V
MODE
voltages.
APPLICATION INFORMATION
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic levels (see Operating Ranges
table) to the V
MODE
Voltage. The Bias Control table
lists the recommended modes of operation for
various applications.
Figure 3: Application Circuit Schematic
C3
0.01F
C4
2.2F ceramic
GND
at slug
RF IN
2
9
1
6
7
10
8
5
4
3
V
CC
V
MODE
GND
RF
IN
GND
V
CC
GND
V
REF
GND
RF
OUT
VCC2
C1
0.01F
VCC1
VMODE
VREF
C2
0.01F
RF OUT
N
O
I
T
A
C
I
L
P
P
A
P
T
U
O
S
L
E
V
E
L
S
A
I
B
E
D
O
M
V
F
E
R
V
E
D
O
M
r
e
w
o
p
w
o
l
-
A
M
D
C
<
m
B
d
6
1
+
w
o
L
V
5
8
.
2
+
V
5
8
.
2
+
r
e
w
o
p
h
g
i
h
-
A
M
D
C
m
B
d
6
1
+
>
h
g
i
H
V
5
8
.
2
+
V
0
n
w
o
d
t
u
h
S
-
n
w
o
d
t
u
h
S
V
0
V
0
Table 5: Bias Control
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