01/2005
PRODUCT DESCRIPTION
As with previous generations, the AWT6167
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167 input and output terminals are internal
matched to 50 ohms and DC blocked, reducing the
AWT6167
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.1
18 Pin
6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
Integrated Vreg (regulated supply)
Harmonic Performance
-25 dBm
High Efficiency (PAE) at Pmax:
-GSM900, 56 %
-DCS, 53 %
+35 dBm GSM900 Output Power at 3.5 V
+33 dBm DCS Output Power at 3.5 V
55 dB dynamic range
GPRS Class 12 Capable
APPLICATIONS
Dual Band Handsets & PDAs
number of external components required in the final
application. Both PA die, GSM900 and DCS, are
fabricated using state of the art InGaP HBT
technology, known for it is proven reliability and
temperature stability.
Figure 1: Block Diagram
CMOS BIAS/Integrated Power Control
V
CC2
H(s)
V
CC2
DCS
IN
GSM900
IN
GSM900
OUT
DCS
OUT
V
CC_OUT
B
S
TX
EN
V
BATT
V
REG
V
RAMP
MATCH
MATCH
MATCH
MATCH
AWT6167
AWT6167
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6167
3
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Although protection circuitry has been designed into this device, proper precau-
tions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500
,
capacitance = 100 pF.
Table 3: ESD Ratings
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
t
l
o
V
y
l
p
p
u
S
T
T
A
B
)
-
7
+
V
F
R
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
1
1
m
B
d
V
(
s
e
g
a
t
l
o
V
l
o
r
t
n
o
C
P
M
A
R
)
3
.
0
-
8
.
1
V
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
5
5
-
0
5
1
C
Table 5: Control Logic Table
Table 4: Digital Inputs
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
h
g
i
H
c
i
g
o
L
H
I
)
2
.
1
-
0
.
3
V
V
(
e
g
a
tl
o
V
w
o
L
c
i
g
o
L
L
I
)
-
-
5
.
0
V
I
(
t
n
e
r
r
u
C
h
g
i
H
c
i
g
o
L
H
I
)
-
-
0
3
A
I
(
t
n
e
r
r
u
C
w
o
L
c
i
g
o
L
L
I
)
-
-
0
3
A
E
D
O
M
N
E
_
x
T
S
B
e
l
b
a
n
E
A
P
H
G
I
H
X
e
d
o
M
0
0
9
M
S
G
H
G
I
H
W
O
L
e
d
o
M
S
C
D
H
G
I
H
H
G
I
H
e
l
b
a
s
i
D
A
P
W
O
L
X
R
E
T
E
M
A
R
A
P
D
O
H
T
E
M
G
N
I
T
A
R
T
I
N
U
)
s
t
r
o
p
F
R
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
)
s
t
u
p
n
i
l
o
r
t
n
o
c
(
e
g
a
tl
o
v
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
4
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6167
Table 6: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
2
-
-
5
8
C
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
T
T
A
B
)
0
.
3
5
.
3
8
.
4
V
t
n
e
r
r
u
C
e
g
a
k
a
e
L
y
l
p
p
u
S
r
e
w
o
P
-
1
0
1
A
V
T
T
A
B
,
V
8
.
4
=
V
P
M
A
R
,
V
0
=
,
W
O
L
=
N
E
_
X
T
d
e
il
p
p
a
F
R
o
N
e
g
n
a
R
e
g
a
tl
o
V
l
o
r
t
n
o
C
2
.
0
-
6
.
1
V
T
(
e
m
it
n
o
n
r
u
T
N
O
)
-
-
1
s
V
P
M
A
R
=
N
E
_
X
T
,
V
2
.
0
=
W
O
L
h
g
i
H
P
N
I
m
B
d
5
=
T
(
e
m
it
ff
o
n
r
u
T
F
F
O
)
-
-
1
s
V
P
M
A
R
=
N
E
_
X
T
,
V
2
.
0
=
H
G
I
H
W
O
L
P
N
I
m
B
d
5
=
T
(
e
m
i
T
e
s
i
R
E
S
I
R
)
-
-
1
s
P
T
U
O
m
B
d
0
1
-
=
P
X
A
M
)
B
d
2
.
0
n
i
h
ti
w
(
T
(
e
m
i
T
ll
a
F
L
L
A
F
)
-
-
1
s
P
T
U
O
P
=
X
A
M
m
B
d
0
1
-
)
B
d
2
.
0
n
i
h
ti
w
(
V
P
M
A
R
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
-
3
-
F
p
V
P
M
A
R
t
n
e
r
r
u
C
t
u
p
n
I
-
-
0
1
A
e
l
c
y
C
y
t
u
D
-
-
0
5
%
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
AWT6167
5
Table 7: Electrical Characteristics for GSM900
(V
BATT
= 3.5 V
,
P
IN
= 3.0 dBm, Pulse Width =1154
s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25 C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
F
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
o
)
0
8
8
-
5
1
9
z
H
M
r
e
w
o
P
t
u
p
n
I
0
0
.
3
5
m
B
d
P
,r
e
w
o
P
t
u
p
t
u
O
X
A
M
5
.
4
3
0
.
5
3
-
m
B
d
z
H
M
5
1
9
o
t
0
8
8
=
q
e
r
F
r
e
w
o
P
t
u
p
t
u
O
d
e
d
a
r
g
e
D
5
.
2
3
5
.
3
3
-
m
B
d
V
T
T
A
B
T
,
V
0
.
3
=
C
5
8
=
O
,
C
P
N
I
m
B
d
0
=
P
@
E
A
P
X
A
M
-
6
5
-
%
z
H
M
5
1
9
o
t
0
8
8
=
q
e
r
F
1
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
3
-
-
m
B
d
P
,
W
O
L
=
N
E
_
X
T
N
I
m
B
d
5
=
2
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
2
-
-
m
B
d
V
,
H
G
I
H
=
N
E
_
X
T
P
M
A
R
,
V
2
.
0
=
P
N
I
m
B
d
5
=
n
o
it
a
l
o
s
I
s
s
o
r
C
F
2
(
o
)
t
r
o
P
S
C
D
@
-
0
3
-
-
m
B
d
V
P
M
A
R
V
o
t
V
2
.
0
=
X
A
M
_
P
M
A
R
s
c
i
n
o
m
r
a
H
o
f
2
F
*
n
o
n
(
,
>
o
F
,
)
3
[
z
H
G
5
7
.
2
1
-
-
5
2
-
0
3
-
-
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
y
ti
li
b
a
t
S
P
,
s
e
s
a
h
P
ll
A
1
:
8
=
R
W
S
V
T
U
O
[
m
B
d
5
.
4
3
-
-
6
3
-
m
B
d
F
T
U
O
z
H
G
1
<
-
-
0
3
-
m
B
d
F
T
U
O
z
H
G
1
>
s
s
e
n
d
e
g
g
u
R
-
-
1
:
0
1
R
W
S
V
,
s
e
s
a
h
p
d
a
o
l
ll
A
P
T
U
O
m
B
d
5
.
4
3
<
r
e
w
o
P
e
s
i
o
N
X
R
-
4
8
-
-
m
B
d
F
X
T
,
z
H
M
5
1
9
=
,
z
H
k
0
0
1
=
W
B
R
F
X
R
,
z
H
M
5
3
9
o
t
5
2
9
=
P
T
U
O
[
m
B
d
5
.
4
3
-
7
8
-
-
m
B
d
F
X
T
,
z
H
M
5
1
9
=
,
z
H
k
0
0
1
=
W
B
R
F
X
R
,
z
H
M
0
6
9
o
t
5
3
9
=
P
T
U
O
[
m
B
d
5
.
4
3
R
W
S
V
t
u
p
n
I
-
1
:
5
.
1
-
-
s
l
e
v
e
l
r
e
w
o
p
t
u
p
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