03/2006
AWT6308R
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
InGaP HBT Technology
High Efficiency:
19 % @ +16 dBm output
40 % @ +28 dBm output
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1
A
Internal Voltage Regulation
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1 mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
RoHS-Compliant Package, 250
o
C MSL-3
APPLICATIONS
CDMA Wireless Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6308R meets the increasing demands for
higher efficiency and smaller footprint in CDMA 1X
handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44%.
The AWT6308R uses ANADIGICS' exclusive InGaP-
PlusTM technology, which combines HBT and
pHEMT devices on the same die, to enable state-of-
the-art reliability, temperature stability, and
ruggedness. The AWT6308R is part of ANADIGICS'
High-Efficiency-at-Low-Power (HELPTM) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
selectable bias modes, the AWT6308R achieves
optimal efficiency across different output power
levels, specifically at low- and mid-range power
levels where the PA typically operates, thereby
dramatically increasing handset talk-time and
standby-time. Its built-in voltage regulator eliminates
the need for external voltage regulation
components. The 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
system.
AW
T6308R
AW
T630
8R
Bias Control
V
BATT
V
EN
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
6
GND at slug (pad)
3
4
2
V
CC
GND
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
AWT6308R
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
V
d
n
a
T
T
A
B
)
0
5
+
V
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
0
5
.
3
+
V
V
(
e
g
a
tl
o
V
e
l
b
a
n
E
N
E
)
0
5
.
3
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
0
1
+
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
0
4
-
0
5
1
+
C
Notes:
(1) For operation at V
CC
= +3.2 V, P
OUT
is derated by 0.5 dB.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)
f
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
0
5
8
1
-
0
1
9
1
z
H
M
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
V
d
n
a
T
T
A
B
)
2
.
3
+
4
.
3
+
2
.
4
+
V
V
(
e
g
a
tl
o
V
e
l
b
a
n
E
N
E
)
2
.
2
+
0
4
.
2
+
-
1
.
3
+
5
.
0
+
V
"
n
o
"
A
P
"
n
w
o
d
t
u
h
s
"
A
P
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
2
.
2
+
0
4
.
2
+
-
1
.
3
+
5
.
0
+
V
e
d
o
M
s
a
i
B
w
o
L
e
d
o
M
s
a
i
B
h
g
i
H
P
(
r
e
w
o
P
t
u
p
t
u
O
F
R
T
U
O
)
5
.
7
2
)
1
(
0
.
8
2
+
-
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
3
-
-
5
8
+
C
4
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
AWT6308R
Table 4: Electrical Specifications - CDMA Operation
(T
C
= +25 C, V
BATT
= V
CC
= +3.4 V, V
EN
= +2.4 V, 50
system)
Notes:
1. ACPRs and Efficiency Limits at mid-band only.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
n
i
a
G
5
2
4
1
4
1
7
2
6
1
6
1
9
2
8
1
8
1
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
4
.
2
+
=
P
T
U
O
V
,
m
B
d
8
1
+
=
E
D
O
M
,
V
4
.
2
+
=
V
C
C
V
7
.
3
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
t
a +
t
e
s
ff
o
z
H
M
5
2
.
1
z
H
M
3
2
.
1
-
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
-
1
5
-
8
5
-
2
5
-
7
4
-
7
4
-
7
4
-
c
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
4
.
2
+
=
P
T
U
O
V
,
m
B
d
8
1
+
=
E
D
O
M
,
V
4
.
2
+
=
V
C
C
V
7
.
3
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
t
a +
t
e
s
ff
o
z
H
M
5
2
.
2
z
H
M
3
2
.
1
-
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
2
6
-
2
6
-
7
5
-
7
5
-
c
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
4
.
2
+
=
y
c
n
e
i
c
if
f
E
d
e
d
d
A
-
r
e
w
o
P
7
3
6
1
0
4
9
1
-
-
%
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
T
U
O
V
,
m
B
d
6
1
+
=
E
D
O
M
V
4
.
2
+
=
)
q
c
I
(
t
n
e
r
r
u
C
t
n
e
c
s
e
i
u
Q
-
4
1
0
2
A
m
V
h
g
u
o
r
h
t
C
C
V
,
n
i
p
E
D
O
M
V
4
.
2
+
=
t
n
e
r
r
u
C
e
l
b
a
n
E
-
3
.
0
8
.
0
A
m
V
h
g
u
o
r
h
t
N
E
"
n
o
"
A
P
,
n
i
p
t
n
e
r
r
u
C
l
o
r
t
n
o
C
e
d
o
M
-
3
.
0
8
.
0
A
m
V
h
g
u
o
r
h
t
E
D
O
M
V
,
n
i
p
E
D
O
M
V
4
.
2
+
=
t
n
e
r
r
u
C
y
r
e
tt
a
B
-
3
5
A
m
V
h
g
u
o
r
h
t
T
T
A
B
V
,
n
i
p
E
D
O
M
V
4
.
2
+
=
t
n
e
r
r
u
C
e
g
a
k
a
e
L
-
1
<
5
A
V
C
C
V
,
V
2
.
4
+
=
N
E
,
V
0
=
V
E
D
O
M
V
0
=
d
n
a
B
e
v
i
e
c
e
R
n
i
e
s
i
o
N
-
5
3
1
-
3
3
1
-
z
H
/
m
B
d
z
H
M
0
9
9
1
o
t
z
H
M
0
3
9
1
s
c
i
n
o
m
r
a
H
o
f
2
o
f
4
,
o
f
3
-
-
3
4
-
5
5
-
0
3
-
0
3
-
c
B
d
e
c
n
a
d
e
p
m
I
t
u
p
n
I
-
-
1
:
2
R
W
S
V
l
e
v
e
L
t
u
p
t
u
O
s
u
o
ir
u
p
S
)
s
t
u
p
t
u
o
s
u
o
ir
u
p
s
ll
a
(
-
-
5
6
-
c
B
d
P
T
U
O
<
m
B
d
8
2
+
1
:
5
<
R
W
S
V
d
a
o
l
d
n
a
b
-
n
I
1
:
0
1
<
R
W
S
V
d
a
o
l
d
n
a
b
-
f
o
-
t
u
O
s
e
g
n
a
r
g
n
it
a
r
e
p
o
ll
a
r
e
v
o
s
e
il
p
p
A
o
n
h
ti
w
s
s
e
r
t
s
h
c
t
a
m
s
i
m
d
a
o
L
e
r
u
li
a
f
r
o
n
o
it
a
d
a
r
g
e
d
t
n
e
n
a
m
r
e
p
1
:
8
-
-
R
W
S
V
e
g
n
a
r
g
n
it
a
r
e
p
o
ll
u
f
r
e
v
o
s
e
il
p
p
A
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
AWT6308R
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the V
REF
and V
MODE
voltages.
Table 5: Bias Control
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the V
MODE
voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
N
O
I
T
A
C
I
L
P
P
A
P
T
U
O
S
L
E
V
E
L
C
I
G
O
L
V
N
E
V
E
D
O
M
r
e
w
o
p
w
o
l
-
A
M
D
C
<
m
B
d
6
1
+
w
o
L
V
4
.
2
+
V
4
.
2
+
r
e
w
o
p
h
g
i
h
-
A
M
D
C
m
B
d
6
1
+
>
h
g
i
H
V
4
.
2
+
V
0
n
w
o
d
t
u
h
S
-
n
w
o
d
t
u
h
S
V
0
V
0
RF IN
2
1
6
7
8
5
4
3
V
ENABLE
RF
IN
V
MODE
GND
GND
V
BATT
V
CC
RF
OUT
V
CC
V
MODE
V
BATT
C5
2.2F
RF OUT
C2
0.01F
C4
2.2 F
V
ENABLE
C3
1000 pF
C6
68 pF
C1
1000 pF
GND
at slug
Figure 3: Application Circuit
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