General Description
The AAT7357 is a low threshold dual MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTechTM's ultra high density
MOSFET process and space saving small outline J-
lead package, performance superior to that normal-
ly found in a TSSOP-8 footprint has been squeezed
into the footprint of a TSOPJW-8 package.
Applications
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Features
V
DS(MAX)
= -20V
I
D(MAX)
1
= -5A @ 25C
Low R
DS(ON)
:
39 m
@ V
GS
= -4.5V
63 m
@ V
GS
= -2.5V
Dual TSOPJW-8 Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
AAT7357
20V P-Channel Power MOSFET
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Typ
Max
Units
R
JA
Junction-to-Ambient steady state, one FET on
1
115
140
C/W
R
JA2
Junction-to-Ambient t<5 seconds
1
64
78
C/W
R
JF
Junction-to-Foot
1
60
72
C/W
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
=150C
1
T
A
= 25C
5
T
A
= 70C
4
A
I
DM
Pulsed Drain Current
2
12
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.3
P
D
Maximum Power Dissipation
1
T
A
= 25C
1.6
W
T
A
= 70C
1.0
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Advanced Information
7357.2003.08.0.6
1
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Notes:
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design, however
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300 s
3. Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250A
-20
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-4.5V, I
D
=-5A
30
39
m
V
GS
=-2.5V, I
D
=-4A
49
63
I
D(ON)
On-State Drain Current
2
V
GS
=-4.5V, V
DS
=-5V (Pulsed)
-12
A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
=12V, V
DS
=0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=-20V
-1
A
V
GS
=0V, V
DS
=-16V, T
J
=70C
3
-5
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=-5A
12
S
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V
14
Q
GS
Gate-Source Charge
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V
3.5
nC
Q
GD
Gate-Drain Charge
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V
5.6
t
D(ON)
Turn-ON Delay
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
TBD
t
R
Turn-ON Rise Time
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
TBD
ns
t
D(OFF)
Turn-OFF Delay
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
TBD
t
F
Turn-OFF Fall Time
V
DS
=-10V, R
D
=2.0
, V
GS
=-4.5V, R
G
=6
TBD
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=-5A
-1.2
V
I
S
Continuous Diode Current
1
-1.3
A
AAT7357
20V P-Channel Power MOSFET
2
7357.2003.08.0.6
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Threshold Voltage
T
J
(
C)
V
GS(th)
Variance (V)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
I
D
= 250
A
On-Resistance vs. Junction Temperature
T
J
(
C)
Normalized R
DS(ON)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
V
GS
= 4.5V
I
D
= 4.5A
On-Resistance vs. Gate to Source Voltage
V
GS
(V)
R
DS(ON)
(m
)
0
0.02
0.04
0.06
0.08
0
1
2
3
4
5
6
7
8
9
10
On-Resistance vs. Drain Current
I
D
(A)
R
DS(ON)
(
)
0
0.02
0.04
0.06
0.08
0
5
10
15
20
V
GS
= 2.5 V
V
GS
= 4.5 V
Transfer Characteristics
V
GS
(V)
I
D
(A)
0
2
4
6
8
10
12
0
1
2
3
4
V
D
= V
G
25
C
-55
C
125
C
Output Characteristics
V
DS
(V)
I
DS
(A)
1.5V
2.5V
3V
2V
3.5V
0
4
8
12
0
0.5
1
1.5
2
4V through 10V
AAT7357
20V P-Channel Power MOSFET
7357.2003.08.0.6
3
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Transient Thermal Response, Junction to Ambient
Time (s)
Normalized Effective
Transient Thermal Impedance
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Single Pulse
.5
.2
.1
.01
.02
Single Pulse Power, Junction to Ambient
Time (s)
Power (W)
0
5
10
15
20
25
30
35
40
1.00E-03 1.00E-02 1.00E-01 1.00E+01 1.00E+01 1.00E+02 1.00E+03
Source-Drain Diode Forward Voltage
V
SD
(V)
I
S
(A)
0.1
1
10
100
0
0 .2
0.4
0 .6
0.8
1
1.2
T
J
= 150
C
T
J
= 25
C
AAT7357
20V P-Channel Power MOSFET
4
7357.2003.08.0.6
Ordering Information
Package Information
TSOPJW-8
All dimensions in millimeters.
0.65 BSC 0.65 BSC 0.65 BSC
0.325
0.075
2.85
0.20
2.40
0.10
3.025
0.075
0.055
0.045
0.9625
0.0375
1.0175
0.0925
0.010
0.15
0.05
7
0.04 REF
0.45
0.15
2.75
0.25
Package
Marking
Part Number (Tape and Reel)
TSOPJW-8
AAT7357ITS-T1
AAT7357
20V P-Channel Power MOSFET
7357.2003.08.0.6
5
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