AAT7103
25V N-Channel Power MOSFET
Preliminary Information
7103.2003.04.0.61
1
General Description
The AAT7103 25V N-Channel Power MOSFET is a
member of AnalogicTechTM's TrenchDMOSTM
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, the product
demonstrates high power handling and small size.
Applications
Battery Packs
Cellular & Cordless Telephones
PDAs, Camcorders, and Cell Phones
Features
V
DS(MAX)
= 25V
I
D(MAX)
(1)
= 6.8 A @ 25C
Low R
DS(ON)
:
26 m
@V
GS
= 4.5V
41 m
@V
GS
= 2.5V
Dual SOP-8 Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
JA
Typical Junction-to-Ambient steady state, one FET on
2
100
C/W
R
JA2
Maximum Junction-to-Ambient Figure, t < 10 sec.
1
62.5
C/W
R
JF
Typical Junction-to-Foot, one FET on
1
35
C/W
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
25
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
=150C
1
T
A
= 25C
6.8
T
A
= 70C
5.4
I
DM
Pulsed Drain Current
3
24
A
I
S
Continuous Source Current (Source-Drain Diode)
1
1.8
P
D
Maximum Power Dissipation
1
T
A
= 25C
2.0
W
T
A
= 70C
1.25
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. R
JF
+ R
FA
= R
JA
where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by
design; however, R
FA
is determined by PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Steady state thermal response while mounted on a 1" x 1" PCB with maximum copper area is provided for comparison with
other devices. This test condition approximates many battery pack applications.
Note 3: Pulsed measurement 300 s, single pulse.
Note 4: Guaranteed by design. Not subject to production testing.
Symbol Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250A
25
V
R
DS(ON)
Drain-Source ON-Resistance
3
V
GS
=4.5V, I
D
=6.8A
19
26
m
V
GS
=2.5V, I
D
=5.4A
28
41
I
D(ON)
On-State Drain Current
3
V
GS
=4.5V ,V
DS
=5V (Pulsed)
24
A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250A
0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
= 12V, V
DS
=0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=25V
1
A
V
GS
=0V, V
DS
=20V, T
J
=70C
5
g
fs
Forward Transconductance
3
V
DS
=5V, I
D
=6.8A
20
S
Dynamic Characteristics
4
Q
G
Total Gate Charge
V
DS
=15V, R
D
=2.2
, V
GS
=4.5V
13
19
Q
GS
Gate-Source Charge
V
DS
=15V, R
D
=2.2
, V
GS
=4.5V
1.9
nC
Q
GD
Gate-Drain Charge
V
DS
=15V, R
D
=2.2
, V
GS
=4.5V
2.9
t
D(ON)
Turn-ON Delay
V
DD
=15V, V
GS
=10V, R
D
=2.2
, RG=6
15
t
R
Turn-ON Rise Time
V
DD
=15V, V
GS
=10V, R
D
=2.2
, RG=6
18
ns
t
D(OFF)
Turn-OFF Delay
V
DD
=15V, V
GS
=10V, R
D
=2.2
, RG=6
36
t
F
Turn-OFF Fall Time
V
DD
=15V, V
GS
=10V, R
D
=2.2
, RG=6
27
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
3
V
GS
=0, I
S
=6.8A
1.5
V
I
S
Continuous Diode Current
1
1.8
A
AAT7103
25V N-Channel Power MOSFET
2
7103.2003.04.0.61
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
I
S
(A)
T
J
= 25
C
T
J
= 150
C
Gate Charge
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
Q
G
, Charge (nC)
V
GS
(V)
V
D
=15V
I
D
=5.5A
On-Resistance vs. Gate to Source Voltage
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 5.5A
On-Resistance vs. Drain Current
0
10
20
30
40
50
60
0
8
16
24
32
I
D
(A)
R
DS(ON)
(m
)
V
GS
= 2.5 V
V
GS
= 4.5 V
Transfer Characteristics
0
8
16
24
32
0
1
2
3
4
V
GS
(V)
I
D
(A)
V
D
=V
G
25C
-55C
125C
Output Characteristics
0
8
16
24
32
0
0.5
1
1.5
2
2.5
3
V
DS
(V)
I
DS
(A)
1.5V
2V
3.5V
2.5V
5V
4.5V
4V
3V
AAT7103
25V N-Channel Power MOSFET
7103.2003.04.0.61
3
AAT7103
25V N-Channel Power MOSFET
4
7103.2003.04.0.61
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Ordering Information
Note: Sample stock is generally held on all part numbers listed in BOLD.
Package Information
All dimensions in millimeters.
0.175
0.075
6.00
0.20
3.90
0.10
1.55
0.20
1.27 BSC
0.42
0.09 8
4.90
0.10
4
4
45
0.375
0.125
0.235
0.045
0.825
0.445
Package
Marking
Part Number (Tape and Reel)
SOP-8
7103
AAT7103IAS-T1
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