General Description
The AAT7361 is a low threshold dual P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small-outline, J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the footprint of a TSOPJW8
package.
Applications
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Features
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max) -3.0A @ 25C
Low On-Resistance:
-- 100m
@ V
GS
= -4.5V
-- 175m
@ V
GS
= -2.5V
Dual TSOPJW-8 Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
AAT7361
20V P-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25C, unless otherwise noted.
Thermal Characteristics
1
Symbol
Description
Typ
Max
Units
R
JA
Junction-to-Ambient Steady State, One FET On
124
155
C/W
R
JA2
Junction-to-Ambient t<5 Seconds
74
90
C/W
R
JF
Junction-to-Foot
66
80
C/W
P
D
Maximum Power Dissipation
T
A
= 25C
1.4
W
T
A
= 70C
0.9
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
= 150C
1
T
A
= 25C
3.0
T
A
= 70C
2.4
A
I
DM
Pulsed Drain Current
2
9
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.0
T
J
Operating Junction Temperature Range
-55 to 150
C
T
STG
Storage Temperature Range
-55 to 150
C
7361.2005.04.1.0
1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design;
however, R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300s.
Electrical Characteristics
T
J
= 25C, unless otherwise noted.
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250A
-20
V
R
DS(ON)
Drain-Source On-Resistance
1
V
GS
= -4.5V, I
D
= -3.0A
80
100
m
V
GS
= -2.5V, I
D
= -2.3A
140
175
I
D(ON)
On-State Drain Current
1
V
GS
= -4.5V, V
DS
= -5V (pulsed)
-9
A
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= -250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
= 12V, V
DS
= 0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
= 0V, V
DS
= -20V
-1
A
V
GS
= 0V, V
DS
= -16V, T
J
= 70C
2
-5
g
fs
Forward Transconductance
1
V
DS
= -5V, I
D
= -3.0A
5
S
Dynamic Characteristics
2
Q
G
Total Gate Charge
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V
6
Q
GS
Gate-Source Charge
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V
1.3
nC
Q
GD
Gate-Drain Charge
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V
1.7
t
D(ON)
Turn-On Delay
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
7
t
R
Turn-On Rise Time
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
13
ns
t
D(OFF)
Turn-Off Delay
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
15
t
F
Turn-Off Fall Time
V
DS
= -10V, R
D
= 3.3
, V
GS
= -4.5V, R
G
= 6
20
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
1
V
GS
= 0, I
S
= -3.0A
-1.3
V
I
S
Continuous Diode Current
3
-1.0
A
AAT7361
20V P-Channel Power MOSFET
2
7361.2005.04.1.0
1. Pulse test: Pulse Width = 300s.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design;
however, R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Threshold Voltage
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
V
GS(th)
Variance (V)
I
D
= 250A
-50
-25
0
25
50
75
100
125
150
T
J
(C)
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
Normalized R
DS(ON)
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V
GS
= 4.5V
I
D
= 3A
On-Resistance vs. Gate-to-Source Voltage
0
1
2
3
4
5
V
GS
(V)
0
0.08
0.16
0.24
0.32
0.4
R
DS(ON)
(
)
I
D
= 3A
I
D
(A)
R
DS(ON)
(
)
On-Resistance vs. Drain Current
0
0.1
0.2
0.3
0
1.5
3
4.5
6
7.5
9
V
GS
= 4.5 V
V
GS
= 2.5 V
Transfer Characteristics
V
GS
(V)
I
D
(A)
V
D
= V
G
0
1.5
3
4.5
6
7.5
9
0
1
2
3
4
5
125C
25C
-55C
V
DS
(V)
I
DS
(A)
0
1.5
3
4.5
6
7.5
9
0
0.5
1
1.5
2
2.5
1.5V
2V
2.5V
3.5V
3V
4V
4.5V
5V
Output Characteristics
3
AAT7361
20V P-Channel Power MOSFET
7361.2005.04.1.0
3
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Transient Thermal Response, Junction to Ambient
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Normalized Effective
Transient Thermal Impedance
.5
.2
.1
.02
Single Pulse
.05
Single Pulse Power, Junction To Ambient
Time (s)
Power (
W
)
0
5
10
15
20
25
30
35
40
45
50
0.0001
0.001
0.01
0.1
1
10
100
1000
Capacitance
V
DS
(V)
Capacitance (pF)
C
iss
C
rss
C
oss
0
100
200
300
400
500
600
700
0
5
10
15
20
V
SD
(V)
I
S
(A)
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0 .2
0.4
0 .6
0.8
1
1 .2
T
J
= 150C
T
J
= 25C
Gate Charge
Q
G
, Charge (nC)
V
GS
(V)
0
1
2
3
4
5
0
2
4
6
8
V
D
= 10V
I
D
= 3.0A
AAT7361
20V P-Channel Power MOSFET
4
7361.2005.04.1.0
AAT7361
20V P-Channel Power MOSFET
7361.2005.04.1.0
5
Ordering Information
Package Information
TSOPJW-8
All dimensions in millimeters.
0.65 BSC 0.65 BSC 0.65 BSC
0.325
0.075
2.85
0.20
2.40
0.10
3.025
0.075
0.055
0.045
0.9625
0.0375
1.0175
0.0925
0.010
0.15
0.05
7
0.04 REF
0.45
0.15
2.75
0.25
Package
Marking
1
Part Number (Tape and Reel)
2
TSOPJW-8
JYXYY
AAT7361ITS-T1
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in
BOLD
.
AAT7361
20V P-Channel Power MOSFET
6
7361.2005.04.1.0
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
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