General Description
The AAT8543 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
Applications
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Features
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max):
-4.2A @ 25C
Low On-Resistance:
-- 57m
@ V
GS
= -4.5V
-- 104m
@ V
GS
= -2.5V
SC70JW-8 Package
D
D
D
D
S
S
S
G
Top View
1
2
3
4
8
7
6
5
AAT8543
20V P-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25C, unless otherwise noted.
Thermal Characteristics
1
Symbol
Description
Typ
Max
Units
R
JA
Typical Junction-to-Ambient Steady State
100
124
C/W
R
JA2
Maximum Junction-to-Ambient t<5 Seconds
62
76
C/W
R
JF
Typical Junction-to-Foot
35
42
C/W
P
D
Maximum Power Dissipation
T
A
= 25C
1.6
W
T
A
= 70C
1.0
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
12
I
D
Continuous Drain Current @ T
J
= 150C
1
T
A
= 25C
4.2
T
A
= 70C
3.3
A
I
DM
Pulsed Drain Current
2
20
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.2
T
J
Operating Junction Temperature Range
-55 to 150
C
T
STG
Storage Temperature Range
-55 to 150
C
8543.2005.04.1.0
1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; howev-
er, R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300s.
Electrical Characteristics
T
J
= 25C, unless otherwise noted.
Symbol Description
Conditions
Min
Typ Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown
V
GS
= 0V, I
D
= -250A
-20
V
Voltage
R
DS(ON)
Drain-Source On-Resistance
1
V
GS
= -4.5V, I
D
= -4.2A
45
57
m
V
GS
= -2.5V, I
D
= -3.1A
80
104
I
D(ON)
On-State Drain Current
1
V
GS
= -4.5V, V
DS
= -5V (pulsed)
-20
A
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= -250A
-0.6
V
I
GSS
Gate-Body Leakage Current
V
GS
= 12V, V
DS
= 0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
= 0V, V
DS
= -20V
-1
A
V
GS
= 0V, V
DS
= -16V, T
J
= 70C
2
-5
g
fs
Forward Transconductance
1
V
DS
= -5V, I
D
= -4.2A
7
S
Dynamic Characteristics
2
Q
G
Total Gate Charge
V
DS
= -10V, R
D
= 2.4
, V
GS
= -4.5V
8.5
Q
GS
Gate-Source Charge
V
DS
= -10V, R
D
= 2.4
, V
GS
= -4.5V
1.5
nC
Q
GD
Gate-Drain Charge
V
DS
= -10V, R
D
= 2.4
, V
GS
= -4.5V
2.8
t
D(ON)
Turn-On Delay
V
DS
= -10V, R
D
= 2.4
, V
GS
= -4.5V, R
G
= 6
10
t
R
Turn-On Rise Time
V
DS
= -10V, R
D
= 2.4
, V
GS
= -4.5V, R
G
= 6
32
ns
t
D(OFF)
Turn-Off Delay
V
DS
= -10V, R
D
= 2.4
, V
GS
= -4.5V, R
G
= 6
61
t
F
Turn-Off Fall Time
V
DS
= -10V, R
D
= 2.4
, V
GS
= -4.5V, R
G
= 6
38
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward
V
GS
= 0, I
S
= -4.2A
-1.3
V
Voltage
1
I
S
Continuous Diode Current
3
-1.2
A
AAT8543
20V P-Channel Power MOSFET
2
8543.2005.04.1.0
1. Pulse test: Pulse Width = 300s.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
JF
+ R
FA
= R
JA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
JF
is guaranteed by design; however,
R
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Threshold Voltage
V
GS(th)
Variance (V)
T
J
(C)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
I
D
= 250A
T
J
(
C)
Normalized R
DS(ON)
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50
-25
0
25
50
75
100
125
150
V
GS
= 4.5V
I
D
= 4.2A
On-Resistance vs. Gate-to-Source Voltage
V
GS
(V)
R
DS(ON)
(
)
I
D
= 4.2A
0
0.05
0.1
0.15
0.2
0.25
0
1
2
3
4
5
I
D
(A)
R
DS(ON)
(
)
On-Resistance vs. Drain Current
0
0.08
0.16
0.24
0.32
0.4
0
5
10
15
20
V
GS
= 2.5V
V
GS
= 4.5V
Transfer Characteristics
V
GS
(V)
I
D
(A)
V
D
= V
G
125C
-55C
0
5
10
15
20
0
1
2
3
4
5
25C
V
DS
(V)
I
DS
(A)
Output Characteristics
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
1.5V
3V
3.5V
2V
2.5V
4V
4.5V
5V
AAT8543
20V P-Channel Power MOSFET
8543.2005.04.1.0
3
Typical Characteristics
T
J
= 25C, unless otherwise noted.
Transient Thermal Response, Junction to Ambient
Time (s)
Normalized Effective
Transient Thermal Impedance
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
.5
.2
.1
.02
Single Pulse
.05
Single Pulse Power, Junction to Ambient
Time (s)
Power (
W
)
0
5
10
15
20
25
30
35
40
45
50
0.001
0.01
0.1
1
10
100
1000
Capacitance
V
DS
(V)
Capacitance (pF)
C
iss
C
rss
C
oss
0
200
400
600
800
1000
0
5
10
15
20
V
SD
(V)
I
S
(A)
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0 .2
0.4
0 .6
0.8
1
1.2
T
J
= 25C
T
J
= 150C
Gate Charge
Q
G
, Charge (nC)
V
GS
(V)
0
1
2
3
4
5
0
2
4
6
8
10
V
D
= 10V
I
D
= 4.2A
AAT8543
20V P-Channel Power MOSFET
4
8543.2005.04.1.0
AAT8543
20V P-Channel Power MOSFET
8543.2005.04.1.0
5
Ordering Information
Package Information
SC70JW-8
All dimensions in millimeters.
0.225
0.075
0.45
0.10
0.05
0.05
2.10
0.30
2.00
0.20
7
3
4
4
1.75
0.10
0.85
0.15
0.15
0.05
1.10 MAX
0.100
2.20
0.20
0.048REF
0.50 BSC 0.50 BSC 0.50 BSC
Package
Marking
1
Part Number (Tape and Reel)
2
SC70JW-8
JTXYY
AAT8543IJS-T1
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
AAT8543
20V P-Channel Power MOSFET
6
8543.2005.04.1.0
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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rights, or other intellectual property rights are implied.
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supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
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