AAT9060
30V N-Channel Power MOSFET
Preliminary Information
9060.2003.05.0.9
1
PWMSwitch
TM
General Description
The AAT9060 30V N-Channel Power MOSFET is a
member of AnalogicTechTM's TrenchDMOSTM
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
Applications
DC-DC converters
High current load switches
LDO output
Features
V
DS(MAX)
= 30V
I
D(MAX)
1
= 39A @ T
C
= 25C
I
APP(MAX)
= 12.5A in typical computer application
Low R
DS(ON)
:
16 m
@V
GS
= 10V
27 m
@V
GS
= 4.5V
DPAK Package
G
S
Drain-Connected Tab
Absolute Maximum Ratings
(T
C
=25C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
JA
Maximum Junction-to-Ambient
96
C/W
R
TYP
Typical Junction to ambient on PC board
2
24
C/W
R
JC
Maximum Junction-to-Case
3
C/W
Symbol
Description
Value
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Gate-Source Voltage
20
I
D
Continuous Drain Current @ T
J
=150C
1
T
C
= 25C
39
T
C
= 70C
31
I
DM
Pulsed Drain Current
3
60
A
I
S
Continuous Source Current (Source-Drain Diode)
1
20
P
D
Maximum Power Dissipation
1
T
C
= 25C
41
W
T
C
= 70C
26
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Electrical Characteristics
(T
J
=25C unless otherwise noted)
Notes:
1. Based on thermal dissipation from junction to case. R
JC
+ R
CA
= R
JA
where the case thermal reference is defined as the solder
mounting surface of the drain tab. R
JC
is guaranteed by design, however R
CA
is determined by the PCB design. Package current is
limited to 30A DC and 60A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 s.
4. Guaranteed by design. Not subject to production testing.
Symbol Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250A
30
V
R
DS(ON)
Drain-Source ON-Resistance
3
V
GS
=10V, I
D
=25A
13
16
m
V
GS
=4.5V, I
D
=19A
21
27
I
D(ON)
On-State Drain Current
3
V
GS
=10V, V
DS
=5V (Pulsed)
60
A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250A
1.0
V
I
GSS
Gate-Body Leakage Current
V
GS
=20V, V
DS
=0V
100
nA
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=30V
1
A
V
GS
=0V, V
DS
=30V, T
J
=70C
4
25
g
fs
Forward Transconductance
3
V
DS
=5V, I
D
=9A
20
S
Dynamic Characteristics
4
Q
G
Total Gate Charge
V
DS
=15V, R
D
=1.3
, V
GS
=5V
13
16
Q
GT
Total Gate Charge
V
DS
=15V, R
D
=1.3
, V
GS
=10V
25
32
Q
GS
Gate-Source Charge
V
DS
=15V, R
D
=1.3
, V
GS
=10V
4
nC
Q
GD
Gate-Drain Charge
V
DS
=15V, R
D
=1.3
, V
GS
=10V
3.5
t
D(ON)
Turn-ON Delay
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
12
t
R
Turn-ON Rise Time
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
38
t
D(OFF)
Turn-OFF Delay
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
21
ns
t
F
Turn-OFF Fall Time
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
32
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
3
V
GS
=0, I
S
=20A
2
V
I
S
Continuous Diode Current
1
20
A
AAT9060
30V N-Channel Power MOSFET
2
9060.2003.05.0.9
Typical Characteristics
(T
J
= 25C unless otherwise noted)
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
T
J
(C)
V
GS(th)
Variance (V)
Threshold Voltage
I
D
= 250A
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
(
C)
Normalized R
DS(ON)
V
GS
= 10 V
I
D
= 25A
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate to Source Voltage
0
10
20
30
40
0
2
4
6
8
10
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 25A
On-Resistance vs. Drain Current
0
10
20
30
40
0
10
20
30
40
50
60
I
D
(A)
R
DS(ON)
(m
)
V
GS
= 4.5V
V
GS
= 10V
Transfer Characteristics
0
10
20
30
40
50
60
0
1
2
3
4
5
6
V
GS
(V)
I
D
(A)
V
D
=V
G
125C
-55C
25C
Output Characteristics
0
10
20
30
40
50
60
0
0.5
1
1.5
2
2.5
3
V
DS
(V)
I
DS
(A)
5V
4.5V
3.5V
10V
6V
4V
3V
AAT9060
30V N-Channel Power MOSFET
9060.2003.05.0.9
3
Typical Characteristics
(T
J
= 25C unless otherwise noted)
Capacitance
0
300
600
900
1200
1500
1800
0
10
20
30
40
V
DS
(V)
Capacitance (pF)
C
ISS
C
OSS
C
RSS
Source-Drain Diode Forward Voltage
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
I
S
(A)
T
J
= 25C
T
J
= 150C
Gate Charge
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
,
V
GS
(V)
Charge (nC)
V
D
= 15V
I
D
= 11.5A
AAT9060
30V N-Channel Power MOSFET
4
9060.2003.05.0.9
AAT9060
30V N-Channel Power MOSFET
9060.2003.05.0.9
5
Ordering Information
Note: Sample stock is generally held on all part numbers listed in BOLD.
Package Information
TO-252 (DPAK)
All dimensions in millimeters.
2.29 BSC
7.5
7.5
5.205
0.255
1.145
0.58
0.13
1.59
0.19
5.775
0.445
1.46
0.57
6.54
0.19
2.67 REF
2.285
0.105
0.83
0.19
0.72
0.17
9.855
0.555
0.50
0.13
Package
Marking
Part Number (Tape and Reel)
TO-252 (DPAK)
9060
AAT9060INY-T1
AAT9060
30V N-Channel Power MOSFET
6
9060.2003.05.0.9
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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