UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R203-029,A
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high
speed switching inductive circuits, and amplifier
applications.
FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability
TO-220
1
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25)
PARAMETER SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
600
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
8
V
Collector Current (DC)
Ic
2
A
Collector Current (PULSE)
I
CP
4
A
Base Current (DC)
I
B
1
A
Base Current (PULSE)
I
BP
2
A
Total Power Dissipation (Tc=25)
Pc 35
W
Junction Temperature
T
J
150
Storage Temperature
T
STG
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25, unless otherwise specified.)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BV
CBO
I
C
= 1mA
600
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
= 10mA
400
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
= 1mA
8
V
Collector Cutoff Current
I
CBO
V
CB
= 600V
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 9V, I
C
= 0
10
A
*V
CE (sat) 1
I
C
= 0.1A, I
B
= 10mA
0.3
V
C-E Saturation Voltage
*V
CE (sat) 2
I
C
= 0.3A, I
B
= 30mA
0.8
V
*V
BE (sat) 1
I
C
= 0.1A, I
B
= 10mA
0.9
V
B-E Saturation Voltage
*V
BE (sat) 2
I
C
= 0.3A, I
B
= 30mA
1.2
V
*h
FE1
V
CE
= 5V, I
C
= 0.3A
10
40
*h
FE2
V
CE
= 5V, I
C
= 0.5A
10
DC Current Gain
*h
FE3
V
CE
= 5V, I
C
= 1A
6
Gain-Bandwidth Product
f
T
V
CE
= 10V, I
C
= 0.3A, f=1MHz
15
MHz
*Pulse Test : Pulse Width 380s, Duty Cycle 2%
CLASSIFICATION OF HFE1
UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
www.unisonic.com.tw
QW-R203-029,A
CHARACTERISTICS CURVE
1
1
hF
E
Collector Current, I
C
(mA)
10
1000
Current Gain & Collector Current
10
10000
100
100
25
125
75
h
FE
@ V
CE
= 5V
1
10
S
a
tu
r
a
t
i
on V
o
l
t
age (
m
V
)
Collector Current, I
C
(mA)
10
1000
Saturation Voltage & Collector Current
100
0
10000
100
100000
125
V
CE
(sat) @ I
C
= 10I
B
25
75
10000
100
1
100
Collector Current, I
C
(mA)
10
1000
1000
10000
100
10000
125
75
1
100
On Vol
t
age (
m
V)
Collector Current (mA)
10
1000
On Voltage & Collector Current
10000
100
1000
V
CE
= 5V
Saturation Voltage & Collector Current
Sat
u
r
a
t
i
on Vol
t
age (
m
V)
25
V
BE
(sat) @ I
C
= 10I
B
1
1
Reverse Biased Voltage (V)
10
100
10
100
Cob
0.1
0.1
Swi
t
chin
g Ti
me
(s)
Collector Current (A)
Swithing Time & Collector Current
10
1
10
Ton
Capacitance & Reverse-Biased Voltage
C
apaci
t
ance
(P
f
)
1
T
STG
T
f
V
CC
= 100V, I
C
= 5I
B1
= 5I
B2
RANK B1
B2 B3 B4 B5 B6
Range
10 ~ 17
13 ~ 22
18 ~ 27
23 ~ 32
28 ~ 37
33 ~ 40
UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
www.unisonic.com.tw
QW-R203-029,A
1
1
Co
lle
cto
r
Cu
rre
n
t
(mA)
Forward Voltage (V)
10
100
Safe operating Area
100
1000
10000
P
T
= 1ms
P
T
= 100ms
P
T
= 1s
1000
10
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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