Aluminum Nitride Terminations
30 Watts, 50
Model RFP-100200N4X50-2
Outline Drawing
SIDE VIEW
TOP VIEW
.100
.040
.200
.030
HATCHED AREA INDICATES
PROTECTIVE COATING
Aluminum Nitride Chip T
e
rminations
1
Sales Desk USA: Voice: (800) 544-2414 Fax: (315) 432-9121
Sales Desk Europe: Voice: (+44) 23 92 232392 Fax: (+44) 23 92 251369
Features
DC 3.0 GHz
30 Watts
Aluminum Nitride (AlN) Ceramic
Terminal for Lead Attachment
Non-Nichrome Resistive
Element
Low VSWR
100% Tested
Notes: Tolerance is .010, unless otherwise specified. Operating
temperature is -55C to +150C (see chart). Designed to meet or exceed
applicable portions of MIL-E-5400. All dimensions are in inches.
Specifications subject to change without notice.
Electrical Specifications
Resistance Value:
50 ohms, 2%
Frequency Range:
DC - 3.0 GHz
Power:
30 Watts
V.S.W.R.:
1.25:1
General Specifications
Resistive Element:
Thick film
Substrate:
Aluminum nitride ceramic
Terminals:
Tin/Lead, 90/10 over nickel
Available on Tape and Reel for Pick and Place Manufacturing.
VER. 12/5/01
Aluminum Nitride Chip T
e
rminations
Model RFP-100200N4X50-2
Typical Performance
2
Sales Desk USA: Voice: (800) 544-2414 Fax: (315) 432-9121
Sales Desk Europe: Voice: (+44) 23 92 232392 Fax: (+44) 23 92 251369
Power Derating
Suggested Mounting Procedures
THAN LEAD.
SUGGESTED STRESS RELIEF METHODS
SCALE: NONE
BOARD LOWER
MIN.
(2 PLACES)
.025
1. Make sure that the devices are mounted on flat surfaces
(.001" under the device) to optimize the heat transfer.
2. Position device on mounting surface and solder in place
using an SN96 type solder.
3. Solder leads in place using an SN63 type solder with a
controlled temperature iron (700F).
CASE TEMPERATURE --
C
% OF RATED POWER
150
125
100
75
50
25
100
75
25
50
0
Available on Tape and Reel for Pick and Place Manufacturing.
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