Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
65
90
85
125
R
JL
43
60
Junction and Storage Temperature Range
A
P
D
C
1.4
0.9
-55 to 150
T
A
=70C
I
D
-2
-2
-8
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
F
T
A
=70C
F
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
-20
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO3423
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -2 A (V
GS
= -10V)
R
DS(ON)
< 92m
(V
GS
= -10V)
R
DS(ON)
< 118m
(V
GS
= -4.5V)
R
DS(ON)
< 166m
(V
GS
= -2.5V)
ESD Rating: 2000V HBM
General Description
The AO3423 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Standard Product
AO3423 is Pb-free (meets ROHS & Sony 259
specifications). AO3423L is a Green Product
ordering option. AO3423 and AO3423L are
electrically identical.
D
S
G
S
G
D
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.
AO3423
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
T
J
=55C
-2.5
1
A
10
A
V
GS(th)
-0.7
-0.9
-1.4
V
I
D(ON)
-8
A
76
92
T
J
=125C
90
108
94
118
m
128
166
m
g
FS
6.8
S
V
SD
-1
-0.78
V
I
S
-1.8
A
C
iss
512
620
pF
C
oss
77
pF
C
rss
62
pF
R
g
9.2
13
Q
g
5.5
6.6
nC
Q
gs
0.8
nC
Q
gd
1.9
nC
t
D(on)
5
ns
t
r
6.7
ns
t
D(off)
28
ns
t
f
13.5
ns
t
rr
9.8
12
ns
Q
rr
2.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate-Body leakage current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
I
F
=-2A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-10V, R
L
=5
,
R
GEN
=3
m
V
GS
=-4.5V, I
D
=-2A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2A
I
DSS
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=12V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=10V
I
GSS
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-2.5V, I
D
=-1A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2A
Reverse Transfer Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
F. The maximum current rating is limited by bond-wires.
Rev 0 : Mar 2006
Alpha & Omega Semiconductor, Ltd.
AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-1.5V
-2.0V
-3.0V
-3.5V
-2.5V
-6.0V
-4.0V
-8.0V
-10.0V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
40
60
80
100
120
140
160
180
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
rmalized On-
R
esist
a
nce
I
D
=-2A, V
GS
=-4.5V
I
D
=-1A, V
GS
=-2.5V
I
D
=-2A, V
GS
=-10V
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-2A
25C
125C
25C
125C
V
DS
=-5V
V
GS
=-2.5V
V
GS
=-4.5V
V
GS
=-10V
Alpha & Omega Semiconductor, Ltd.
AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.1
1.0
10.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(Am
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150C
T
A
=25C
10
s
0
1
2
3
4
5
0
1
2
3
4
5
6
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts
)
I
D
=-2A
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acit
a
n
ce (
p
F
)
C
iss
C
oss
C
rss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
wer (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
rmaliz
ed
T
r
an
sien
t
T
h
e
rmal R
esist
an
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
Alpha & Omega Semiconductor, Ltd.
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